All MOSFET. 38N10A Datasheet

 

38N10A MOSFET. Datasheet pdf. Equivalent


   Type Designator: 38N10A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 300 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 38 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 125 nC
   trⓘ - Rise Time: 190 nS
   Cossⓘ - Output Capacitance: 1100 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.055 Ohm
   Package: LCC

 38N10A Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

38N10A Datasheet (PDF)

 ..1. Size:34K  microsemi
 38n10a msaer38n10a msafr38n10a.pdf

38N10A 38N10A

2830 S. Fairview St.Santa Ana, CA 92704PH: (714) 979-8220 MSAER38N10AFAX: (714) 966-5256MSAFR38N10AFeatures100 Volts Ultrafast rectifier in parallel with the body diode (MSAE type only)38 Amps Rugged polysilicon gate cell structure Increased Unclamped Inductive Switching (UIS) capability55 m Hermetically sealed, surface mount power package Low pa

 9.1. Size:938K  belling
 blp038n10gl-d.pdf

38N10A 38N10A

BLP038N10GL MOSFET Step-Down Converter , 1Description BLP038N10GL, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for Synchronous rectification and high speed switching applications. KEY CHARACTERISTICS Par

 9.2. Size:1003K  belling
 blp038n10gl-p blp038n10gl-b.pdf

38N10A 38N10A

BLP038N10GL MOSFET Step-Down Converter , 1Description BLP038N10GL, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for Synchronous rectification and high speed switching applications. KEY CHARACTERISTICS

 9.3. Size:992K  ncepower
 ncep038n10gu.pdf

38N10A 38N10A

http://www.ncepower.com NCEP038N10GUNCE N-Channel Super Trench II Power MOSFETDescriptionGeneral FeaturesThe NCEP038N10GU uses Super Trench II technology that is V =100V,I =135ADS Duniquely optimized to provide the most efficient high frequencyR =3.45m (Typ.) @ V =10VDS(ON) GSswitching performance. Both conduction and switching power Excellent gate charge x R produ

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: SM2A08NSU

 

 
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