38N10A - описание и поиск аналогов

2830 S. Fairview St. Santa Ana, CA 92704 PH (714) 979-8220 MSAER38N10A FAX (714) 966-5256 MSAFR38N10A Features 100 Volts Ultrafast rectifier in parallel with the body diode (MSAE type only) 38 Amps Rugged polysilicon gate cell structure Increased Unclamped Inductive Switching (UIS) capability 55 m Hermetically sealed, surface mount power package Low pa

AGM038N10A Table 3. Electrical Characteristics (TJ=25 unless otherwise noted) Symbol Parameter Conditions Min Typ Max Unit On/Off States BV Drain-Source Breakdown Voltage V =0V I =250 A 100 -- -- V GS D DSS Zero Gate Voltage Drain Current V =100V,V =0V -- -- 1 A DS GS I DSS V = 20V,V =0V -- -- nA GS DS IGSS Gate-Body Leakage Current 100 VGS(th) Gate Threshold Voltag

BLP038N10GL MOSFET Step-Down Converter , 1 Description BLP038N10GL, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for Synchronous rectification and high speed switching applications. KEY CHARACTERISTICS Par

BLP038N10GL MOSFET Step-Down Converter , 1 Description BLP038N10GL, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for Synchronous rectification and high speed switching applications. KEY CHARACTERISTICS

http //www.ncepower.com NCEP038N10GU NCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP038N10GU uses Super Trench II technology that is V =100V,I =135A DS D uniquely optimized to provide the most efficient high frequency R =3.45m (Typ.) @ V =10V DS(ON) GS switching performance. Both conduction and switching power Excellent gate charge x R produ