Справочник MOSFET. 38N10A

 

38N10A MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: 38N10A
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 300 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 38 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 190 ns
   Cossⓘ - Выходная емкость: 1100 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.055 Ohm
   Тип корпуса: LCC

 Аналог (замена) для 38N10A

 

 

38N10A Datasheet (PDF)

 ..1. Size:34K  microsemi
 38n10a msaer38n10a msafr38n10a.pdf

38N10A 38N10A

2830 S. Fairview St.Santa Ana, CA 92704PH: (714) 979-8220 MSAER38N10AFAX: (714) 966-5256MSAFR38N10AFeatures100 Volts Ultrafast rectifier in parallel with the body diode (MSAE type only)38 Amps Rugged polysilicon gate cell structure Increased Unclamped Inductive Switching (UIS) capability55 m Hermetically sealed, surface mount power package Low pa

 9.1. Size:938K  belling
 blp038n10gl-d.pdf

38N10A 38N10A

BLP038N10GL MOSFET Step-Down Converter , 1Description BLP038N10GL, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for Synchronous rectification and high speed switching applications. KEY CHARACTERISTICS Par

 9.2. Size:1003K  belling
 blp038n10gl-p blp038n10gl-b.pdf

38N10A 38N10A

BLP038N10GL MOSFET Step-Down Converter , 1Description BLP038N10GL, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for Synchronous rectification and high speed switching applications. KEY CHARACTERISTICS

 9.3. Size:992K  ncepower
 ncep038n10gu.pdf

38N10A 38N10A

http://www.ncepower.com NCEP038N10GUNCE N-Channel Super Trench II Power MOSFETDescriptionGeneral FeaturesThe NCEP038N10GU uses Super Trench II technology that is V =100V,I =135ADS Duniquely optimized to provide the most efficient high frequencyR =3.45m (Typ.) @ V =10VDS(ON) GSswitching performance. Both conduction and switching power Excellent gate charge x R produ

Другие MOSFET... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

 

 
Back to Top