All MOSFET. BLM4953A Datasheet

 

BLM4953A Datasheet and Replacement


   Type Designator: BLM4953A
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.6 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 5.3 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 13 nS
   Cossⓘ - Output Capacitance: 420 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.049 Ohm
   Package: SOP-8
 

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BLM4953A Datasheet (PDF)

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BLM4953A

Pb Free Product BLM4953A P-Channel Enhancement Mode Power MOSFET DESCRIPTION D1D2The BLM4953A uses advanced trench technology to provide excellent R , low gate charge and operation with gate DS(ON)G1 G2voltages as low as 4.5V. This device is suitable for use as a load switch or in PWM applications. S1 S2Schematic diagram GENERAL FEATURES V = -30V,I = -5.3A DS

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BLM4953A

Pb Free Product BLM4953 P-Channel Enhancement Mode Power MOSFET DESCRIPTION D 1 D 2 The BLM4953 uses advanced trench technology to prov ide excellent R , low gate charge and operation with gate DS(ON)G 1 G 2 voltages as low as 4.5V. This device is suitable for use as a load switch or in PWM applications. S 1 S 2 Schematic diagram GENERAL FEATURES VDS = -30V,ID

Datasheet: BLM3400 , BLM3401 , BLM3401A , BLM3407 , BLM3407A , BLM3415 , BLM4435 , BLM4953 , IRF640N , BLM7002 , BLM7002K , BLM8205 , BLM8205A , BLM9435 , BLM9435A , BLM9926 , 20N15 .

History: RU75170S | IRFB4615PBF

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