BLM4953A Datasheet and Replacement
Type Designator: BLM4953A
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 2.6 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 5.3 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 13 nS
Cossⓘ - Output Capacitance: 420 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.049 Ohm
Package: SOP-8
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BLM4953A Datasheet (PDF)
blm4953a.pdf

Pb Free Product BLM4953A P-Channel Enhancement Mode Power MOSFET DESCRIPTION D1D2The BLM4953A uses advanced trench technology to provide excellent R , low gate charge and operation with gate DS(ON)G1 G2voltages as low as 4.5V. This device is suitable for use as a load switch or in PWM applications. S1 S2Schematic diagram GENERAL FEATURES V = -30V,I = -5.3A DS
blm4953.pdf

Pb Free Product BLM4953 P-Channel Enhancement Mode Power MOSFET DESCRIPTION D 1 D 2 The BLM4953 uses advanced trench technology to prov ide excellent R , low gate charge and operation with gate DS(ON)G 1 G 2 voltages as low as 4.5V. This device is suitable for use as a load switch or in PWM applications. S 1 S 2 Schematic diagram GENERAL FEATURES VDS = -30V,ID
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
History: CMP1405 | TSM4424CS | LKK47-06C5 | FMR23N50E | SVS70R900SE3TR | BRCS200P03DP | IRFB3004GPBF
Keywords - BLM4953A MOSFET datasheet
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History: CMP1405 | TSM4424CS | LKK47-06C5 | FMR23N50E | SVS70R900SE3TR | BRCS200P03DP | IRFB3004GPBF



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