All MOSFET. BLM9435 Datasheet

 

BLM9435 Datasheet and Replacement


   Type Designator: BLM9435
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 1.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 5.4 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Cossⓘ - Output Capacitance: 60 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.06 Ohm
   Package: SOT-23
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BLM9435 Datasheet (PDF)

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BLM9435

BLM9435 Power MOSFET 1Description Step-Down Converter The BLM9435 uses advanced trench technology , to provide excellent RDS(ON), low gate charge. It can be used in a wide variety of applications. KEY CHARACTERISTICS Parameter Value Unit V -30 V DSI -5.1 A DR .TYP 48 m DS(ON)@-10V R .TYP 70 m DS(ON)@-4.5V FEATURES High power and current handi

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BLM9435

Pb Free Product BLM9435A P-Channel Enhancement Mode Power MOSFET DESCRIPTION DThe BLM9435A uses advanced trench technology to provide excellent R , low gate charge and operation with gate DS(ON)Gvoltages as low as 4.5V. This device is suitable for use as a load switch or in PWM applications. SSchematic diagram GENERAL FEATURES V = -30V,I = -5.3A DS DR

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History: GSM9995S | CED05N8 | AON6794 | IRLR024 | SQM200N04-1M7L | BUZ84 | BL10N70-A

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