SFU9110 Datasheet. Specs and Replacement
Type Designator: SFU9110
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 20 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 2.8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 50 nS
Cossⓘ - Output Capacitance: 260 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm
Package: TO251
SFU9110 substitution
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SFU9110 datasheet
sfu9110 sfr9110.pdf
SFR/U9110 Advanced Power MOSFET FEATURES BVDSS = -100 V n Avalanche Rugged Technology RDS(on) = 1.2 n Rugged Gate Oxide Technology n Lower Input Capacitance ID = -2.8 A n Improved Gate Charge n Extended Safe Operating Area D-PAK I-PAK n Lower Leakage Current 10 A(Max.) @ VDS = -100V n Lower RDS(ON) 0.912 (Typ.) 2 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute M... See More ⇒
sfu9130 sfr9130.pdf
SFR/U9130 Advanced Power MOSFET FEATURES BVDSS = -100 V Avalanche Rugged Technology RDS(on) = 0.3 Rugged Gate Oxide Technology Lower Input Capacitance ID = -9.8 A Improved Gate Charge Extended Safe Operating Area D-PAK I-PAK Lower Leakage Current 10 A (Max.) @ VDS = -100V Lower RDS(ON) 0.225 (Typ.) 2 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute Maximum... See More ⇒
sfr9120 sfu9120.pdf
SFR/U9120 Advanced Power MOSFET FEATURES BVDSS = -100 V n Avalanche Rugged Technology RDS(on) = 0.6 n Rugged Gate Oxide Technology n Lower Input Capacitance ID = -4.9 A n Improved Gate Charge n Extended Safe Operating Area D-PAK I-PAK n Lower Leakage Current 10 A(Max.) @ VDS = -100V n Lower RDS(ON) 0.444 (Typ.) 2 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute M... See More ⇒
Detailed specifications: SFS9644, SFS9Z14, SFS9Z24, SFS9Z34, SFU2955, SFU9014, SFU9024, SFU9034, IRFB4110, SFU9120, SFU9130, SFU9210, SFU9214, SFU9220, SFU9224, SFU9310, SFW2955
Keywords - SFU9110 MOSFET specs
SFU9110 cross reference
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