All MOSFET. 60N05-16 Datasheet

 

60N05-16 Datasheet and Replacement


   Type Designator: 60N05-16
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 150 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 50 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 60 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 105 nS
   Cossⓘ - Output Capacitance: 900 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.016 Ohm
   Package: TO-220C
 

 60N05-16 substitution

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60N05-16 Datasheet (PDF)

 ..1. Size:230K  inchange semiconductor
60n05-16.pdf pdf_icon

60N05-16

INCHANGE Semiconductorisc N-Channel MOSFET Transistor 60N05-16DESCRIPTIONDrain Current I = 60A@ T =25D CStatic Drain-Source On-Resistance: R = 16m(Max)DS(on)Fast Switching SpeedMinimum Lot-to-Lot variations for robust device performanceand reliable operationAPPLICATIONSGeneral purpose power amplifierHigh current,high speed switchingSolenoid and

 0.1. Size:354K  st
stp60n05-16 stp60n06-16.pdf pdf_icon

60N05-16

www.DataSheet4U.comwww.DataSheet4U.comwww.DataSheet4U.comwww.DataSheet4U.comwww.DataSheet4U.comwww.DataSheet4U.comwww.DataSheet4U.com

 7.1. Size:81K  st
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60N05-16

STP60N05-14STP60N06-14N - CHANNEL ENHANCEMENT MODEPOWER MOS TRANSISTORPRELIMINARY DATATYPE V R IDSS DS(on) DSTP60N05-14 50 V

 7.2. Size:54K  st
stp60n05-14 stp60n06-14.pdf pdf_icon

60N05-16

STP60N05-14STP60N06-14N - CHANNEL ENHANCEMENT MODEPOWER MOS TRANSISTORPRELIMINARY DATATYPE V R IDSS DS(on) DSTP60N05-14 50 V

Datasheet: 2SK1939-01 , 2SK1982-01M , 2SK2020-01MR , 2SK2645 , 2SK2850 , 40N10 , 50N15 , 60N05 , AO3400 , 60N06-18 , 60N10 , 6N70A , 75N06 , 75N10 , 75NF75 , BUK436-100A , BUK436-100B .

History: CRST049N08N | STP16NF06LFP

Keywords - 60N05-16 MOSFET datasheet

 60N05-16 cross reference
 60N05-16 equivalent finder
 60N05-16 lookup
 60N05-16 substitution
 60N05-16 replacement

 

 
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