60N05-16 Datasheet and Replacement
Type Designator: 60N05-16
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 150 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 50 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 60 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 105 nS
Cossⓘ - Output Capacitance: 900 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.016 Ohm
Package: TO-220C
60N05-16 substitution
60N05-16 Datasheet (PDF)
60n05-16.pdf
INCHANGE Semiconductorisc N-Channel MOSFET Transistor 60N05-16DESCRIPTIONDrain Current I = 60A@ T =25D CStatic Drain-Source On-Resistance: R = 16m(Max)DS(on)Fast Switching SpeedMinimum Lot-to-Lot variations for robust device performanceand reliable operationAPPLICATIONSGeneral purpose power amplifierHigh current,high speed switchingSolenoid and
stp60n05-16 stp60n06-16.pdf
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stp60n05-14.pdf
STP60N05-14STP60N06-14N - CHANNEL ENHANCEMENT MODEPOWER MOS TRANSISTORPRELIMINARY DATATYPE V R IDSS DS(on) DSTP60N05-14 50 V
stp60n05-14 stp60n06-14.pdf
STP60N05-14STP60N06-14N - CHANNEL ENHANCEMENT MODEPOWER MOS TRANSISTORPRELIMINARY DATATYPE V R IDSS DS(on) DSTP60N05-14 50 V
Datasheet: 2SK1939-01 , 2SK1982-01M , 2SK2020-01MR , 2SK2645 , 2SK2850 , 40N10 , 50N15 , 60N05 , IRFP260 , 60N06-18 , 60N10 , 6N70A , 75N06 , 75N10 , 75NF75 , BUK436-100A , BUK436-100B .
History: IRLD120PBF | NTJS3151P | IRFV360 | NTJS3157N | SI1450DH | SI1470DH | IRF331
Keywords - 60N05-16 MOSFET datasheet
60N05-16 cross reference
60N05-16 equivalent finder
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History: IRLD120PBF | NTJS3151P | IRFV360 | NTJS3157N | SI1450DH | SI1470DH | IRF331
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