SFU9120 Datasheet and Replacement
Type Designator: SFU9120
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 32 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id| ⓘ - Maximum Drain Current: 4.9 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Qg ⓘ - Total Gate Charge: 16 nC
tr ⓘ - Rise Time: 21 nS
Cossⓘ - Output Capacitance: 90 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.6 Ohm
Package: TO251
SFU9120 Datasheet (PDF)
sfr9120 sfu9120.pdf

SFR/U9120Advanced Power MOSFETFEATURESBVDSS = -100 Vn Avalanche Rugged TechnologyRDS(on) = 0.6 n Rugged Gate Oxide Technology n Lower Input CapacitanceID = -4.9 An Improved Gate Chargen Extended Safe Operating AreaD-PAK I-PAKn Lower Leakage Current : 10 A(Max.) @ VDS = -100Vn Lower RDS(ON) : 0.444 (Typ.) 2112331. Gate 2. Drain 3. SourceAbsolute M
sfu9130 sfr9130.pdf

SFR/U9130Advanced Power MOSFETFEATURESBVDSS = -100 V Avalanche Rugged TechnologyRDS(on) = 0.3 Rugged Gate Oxide Technology Lower Input CapacitanceID = -9.8 A Improved Gate Charge Extended Safe Operating AreaD-PAK I-PAK Lower Leakage Current : 10 A (Max.) @ VDS = -100V Lower RDS(ON) : 0.225 (Typ.) 2112331. Gate 2. Drain 3. SourceAbsolute Maximum
sfu9110 sfr9110.pdf

SFR/U9110Advanced Power MOSFETFEATURESBVDSS = -100 Vn Avalanche Rugged TechnologyRDS(on) = 1.2 n Rugged Gate Oxide Technology n Lower Input CapacitanceID = -2.8 An Improved Gate Chargen Extended Safe Operating AreaD-PAK I-PAKn Lower Leakage Current : 10 A(Max.) @ VDS = -100Vn Lower RDS(ON) : 0.912 (Typ.) 2112331. Gate 2. Drain 3. SourceAbsolute M
Datasheet: SFS9Z14 , SFS9Z24 , SFS9Z34 , SFU2955 , SFU9014 , SFU9024 , SFU9034 , SFU9110 , 10N60 , SFU9130 , SFU9210 , SFU9214 , SFU9220 , SFU9224 , SFU9310 , SFW2955 , SFW9510 .
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