SFU9120
MOSFET. Datasheet pdf. Equivalent
Type Designator: SFU9120
Type of Transistor: MOSFET
Type of Control Channel: P
-Channel
Pdⓘ
- Maximum Power Dissipation: 32
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id|ⓘ - Maximum Drain Current: 4.9
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 16
nC
trⓘ - Rise Time: 21
nS
Cossⓘ -
Output Capacitance: 90
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.6
Ohm
Package:
TO251
SFU9120
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SFU9120
Datasheet (PDF)
..1. Size:228K fairchild semi
sfr9120 sfu9120.pdf 
SFR/U9120Advanced Power MOSFETFEATURESBVDSS = -100 Vn Avalanche Rugged TechnologyRDS(on) = 0.6 n Rugged Gate Oxide Technology n Lower Input CapacitanceID = -4.9 An Improved Gate Chargen Extended Safe Operating AreaD-PAK I-PAKn Lower Leakage Current : 10 A(Max.) @ VDS = -100Vn Lower RDS(ON) : 0.444 (Typ.) 2112331. Gate 2. Drain 3. SourceAbsolute M
9.1. Size:262K fairchild semi
sfu9130 sfr9130.pdf
SFR/U9130Advanced Power MOSFETFEATURESBVDSS = -100 V Avalanche Rugged TechnologyRDS(on) = 0.3 Rugged Gate Oxide Technology Lower Input CapacitanceID = -9.8 A Improved Gate Charge Extended Safe Operating AreaD-PAK I-PAK Lower Leakage Current : 10 A (Max.) @ VDS = -100V Lower RDS(ON) : 0.225 (Typ.) 2112331. Gate 2. Drain 3. SourceAbsolute Maximum
9.2. Size:253K fairchild semi
sfu9110 sfr9110.pdf
SFR/U9110Advanced Power MOSFETFEATURESBVDSS = -100 Vn Avalanche Rugged TechnologyRDS(on) = 1.2 n Rugged Gate Oxide Technology n Lower Input CapacitanceID = -2.8 An Improved Gate Chargen Extended Safe Operating AreaD-PAK I-PAKn Lower Leakage Current : 10 A(Max.) @ VDS = -100Vn Lower RDS(ON) : 0.912 (Typ.) 2112331. Gate 2. Drain 3. SourceAbsolute M
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