All MOSFET. 75N10 Datasheet

 

75N10 MOSFET. Datasheet pdf. Equivalent


   Type Designator: 75N10
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Maximum Power Dissipation (Pd): 300 W
   Maximum Drain-Source Voltage |Vds|: 100 V
   Maximum Gate-Source Voltage |Vgs|: 20 V
   Maximum Drain Current |Id|: 75 A
   Maximum Junction Temperature (Tj): 150 °C
   Rise Time (tr): 110 nS
   Maximum Drain-Source On-State Resistance (Rds): 0.02 Ohm
   Package: TO-3

 75N10 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

75N10 Datasheet (PDF)

 ..1. Size:228K  inchange semiconductor
75n10.pdf

75N10
75N10

INCHANGE Semiconductorisc N-Channel Mosfet Transistor 75N10FEATURESDrain Current I = 75A@ T =25D CDrain Source Voltage-: V =100V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching mode power suppliesGeneral purpose power amplifierABSOLUTE MAXIMUM RATINGS(T =25)a

 0.1. Size:1354K  rohm
rsd175n10fra.pdf

75N10
75N10

Data SheetAEC-Q101 Qualified4V Drive Nch MOSFET RSD175N10RSD175N10FRA Structure Dimensions (Unit : mm)Silicon N-channel MOSFETCPT36.5(SC-63)5.12.30.5Features1) Low on-resistance.4) 4V drive.0.754) High power package.0.650.9 2.3(1) (2) (3)2.3 0.51.0 ApplicationSwitching Packaging specifications Inner circuit1

 0.2. Size:1159K  rohm
rsd175n10.pdf

75N10
75N10

Data Sheet4V Drive Nch MOSFET RSD175N10 Structure Dimensions (Unit : mm)Silicon N-channel MOSFETCPT36.5(SC-63)5.12.30.5Features1) Low on-resistance.4) 4V drive.0.754) High power package.0.650.9 2.3(1) (2) (3)2.3 0.51.0 ApplicationSwitching Packaging specifications Inner circuit1Package TapingTypeCode TLBas

 0.3. Size:151K  ixys
ixfh75n10q ixft75n10q.pdf

75N10
75N10

Advanced Technical InformationIXFH 75N10Q VDSS = 100 VHiPerFETTMIXFT 75N10Q ID25 = 75 APower MOSFETs RDS(on) = 20 mWQ-Classt 200nsrr N-Channel Enhancement ModeAvalanche Rated, High dv/dtLow Gate Charge and CapacitancesSymbol Test Conditions Maximum Ratings TO-247 AD (IXFH)VDSS TJ = 25C to 150C 100 VVDGR TJ = 25C to 150C; RGS = 1 M 100 VVGS Continuous

 0.4. Size:252K  ixys
ixta75n10p ixtp75n10p ixtq75n10p.pdf

75N10
75N10

IXTA 75N10P VDSS = 100 VPolarHTTMIXTP 75N10P ID25 = 75 APower MOSFETIXTQ 75N10P RDS(on) 25 m N-Channel Enhancement ModeAvalanche RatedTO-263 (IXTA)Symbol Test Conditions Maximum RatingsGSVDSS TJ = 25 C to 175 C 100 V(TAB)VDGR TJ = 25 C to 175 C; RGS = 1 M 100 VVGS Continuous 20 VTO-220 (IXTP)VGSM Transient

 0.5. Size:579K  ixys
ixth67n10 ixtm67n10 ixth75n10 ixtm75n10 ixtt75n10.pdf

75N10
75N10

VDSS ID25 RDS(on)MegaMOSTMFETIXTH / IXTM 67N10100 V 67 A 25 mIXTH / IXTM 75N10100 V 75 A 20 mIXTT 75N10N-Channel Enhancement ModeTO-247 AD (IXTH)Symbol Test Conditions Maximum Ratings(TAB)VDSS TJ = 25C to 150C 100 VVDGR TJ = 25C to 150C; RGS = 1 M 100 VTO-204 AE (IXTM)VGS Continuous 20 VVGSM Transient 30

 0.6. Size:139K  ixys
ixth75n10l2 ixtt75n10l2.pdf

75N10
75N10

Advance Technical InformationLinearL2TM Power VDSS = 100VIXTH75N10L2MOSFET w/extended ID25 = 75AIXTT75N10L2 RDS(on) 21m FBSOADDDDO DON-Channel Enhancement ModeRGiGuaranteed FBSOAwwG OAvalanche RatedTO-247 (IXTH)OSSymbol Test Conditions Maximum RatingsGVDSS TJ = 25C to 150C 100 V DD (Tab)SVDGR TJ = 25

 0.7. Size:94K  ixys
ixfh67n10 ixfh75n10 ixfm67n10 ixfm75n10.pdf

75N10
75N10

VDSS ID25 RDS(on)HiPerFETTMIXFH/IXFM 67 N10 100 V 67 A 25 mWPower MOSFETsIXFH/IXFM 75 N10 100 V 75 A 20 mWtrr 200 nsN-Channel Enhancement ModeHigh dv/dt, Low trr, HDMOSTM FamilySymbol Test Conditions Maximum Ratings TO-247 AD (IXFH)VDSS TJ = 25C to 150C 100 VVDGR TJ = 25C to 150C; RGS = 1 MW 100 V(TAB)VGS Continuous 20 VVGSM Transient 30 VID25 TC = 25

 0.8. Size:34K  microsemi
msafx75n10a.pdf

75N10
75N10

2830 S. Fairview St.Santa Ana, CA 92704PH: (714) 979-8220FAX: (714) 966-5256MSAFX75N10AFeatures100 Volts Ultrafast body diode75 Amps Rugged polysilicon gate cell structure Increased Unclamped Inductive Switching (UIS) capability20 m Hermetically sealed, surface mount power package Low package inductance Very low thermal resistanceN-CHANNEL

 0.9. Size:82K  microsemi
msafa75n10c.pdf

75N10
75N10

MSAFA75N10C N-CHANNEL ENHANCEMENT MODE SANTA ANA DIVISIONPOWER MOSFET PRODUCT PREVIEW KEY FEATURES KEY FEATURES KEY FEATURESKEY FEATURESDESCRIPTION Ultrafast body diode New generation N-channel enhancement mode power MOSFET with Increased Unclamped rugged polysilicon gate structure and fast switching intrinsic rectifier. The Inductive Switching (UIS) very

 0.10. Size:857K  cet
cep75n10 ceb75n10.pdf

75N10
75N10

CEP75N10/CEB75N10N-Channel Enhancement Mode Field Effect Transistor PRELIMINARYFEATURES100V, 72A, RDS(ON) = 15m @VGS = 10V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.DLead free product is acquired.TO-220 & TO-263 package.GCEB SERIESCEP SERIESTO-263(DD-PAK) STO-220ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherw

 0.11. Size:158K  ssdi
sff75n10.pdf

75N10
75N10

 0.12. Size:145K  ssdi
sff75n10b.pdf

75N10
75N10

 0.13. Size:168K  ssdi
sff75n10n sff75n10p.pdf

75N10
75N10

 0.14. Size:385K  nell
75n10a 75n10b.pdf

75N10
75N10

RoHS 75N10 Series RoHS SEMICONDUCTORNell High Power ProductsN-Channel Power MOSFET(75A, 100Volts)DESCRIPTIONDD The Nell 75N10 is a three-terminal silicon devicewith current conduction capability of 75A, fast switchingspeed, low on-state resistance, breakdown voltagerating of 100V, and max. threshold voltage of 5 volts. They are designed as an extremely efficient and G

 0.15. Size:258K  feihonltd
fhp75n100a.pdf

75N10
75N10

 0.16. Size:216K  hy
hy75n10t.pdf

75N10
75N10

HY75N10T 100V / 75A100V, RDS(ON)=13mW@VGS=10V, ID=30AN-Channel Enhancement Mode MOSFETFeaturesTO-220AB Low On-State Resistance Excellent Gate Charge x RDS(ON) Product ( FOM ) Fully Characterized Avalanche Voltage and Current Specially Desigened for DC-DC Converter, Off-line UPS, Automotive System, Solenoid and Motor ControlDrain 2 In compliance with E

 0.17. Size:784K  way-on
wms175n10hg4.pdf

75N10
75N10

WMS175N10HG4 100V N-Channel Enhancement Mode Power MOSFET DDDescriptionDDWMS175N10HG4 uses Wayon's 4th generation power trench MOSFET technology that has been especially tailored to minimize the on-state S SSresistance and yet maintain superior switching performance. This Gdevice is well suited for high efficiency fast switching applications. SOP-8LFeatures

 0.18. Size:614K  way-on
wmo175n10lg4.pdf

75N10
75N10

WMO175N10LG4 100V N-Channel Enhancement Mode Power MOSFET DescriptionWMO175N10LG4 uses Wayon's 4th generation power trench MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. This DSdevice is well suited for high efficiency fast switching applications. GTO-252Features V = 100V, I =

 0.19. Size:620K  way-on
wmb175n10lg4.pdf

75N10
75N10

WMB175N10LG4 100V N-Channel Enhancement Mode Power MOSFET DescriptionD DDDDDD DWMB175N10LG4 uses Wayon's 4th generation power trench MOSFET Gtechnology that has been especially tailored to minimize the on-state sssssGsresistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. PDFN50

 0.20. Size:599K  way-on
wmk175n10hg4.pdf

75N10
75N10

WMK175N10HG4 100V N-Channel Enhancement Mode Power MOSFET DescriptionWMK175N10HG4 uses Wayon's 4th generation power trench MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. SDGFeatures TO-220 V = 100V, I =

 0.21. Size:604K  way-on
wmk175n10lg4.pdf

75N10
75N10

WMK175N10LG4 100V N-Channel Enhancement Mode Power MOSFET DescriptionWMK175N10LG4 uses Wayon's 4th generation power trench MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. SDGFeatures TO-220 V = 100V, I =

 0.22. Size:617K  way-on
wmb175n10hg4.pdf

75N10
75N10

WMB175N10HG4 100V N-Channel Enhancement Mode Power MOSFET DescriptionD DDDDDD DWMB175N10HG4 uses Wayon's 4th generation power trench MOSFET Gtechnology that has been especially tailored to minimize the on-state sssssGsresistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. PDFN50

 0.23. Size:600K  way-on
wmq175n10lg4.pdf

75N10
75N10

WMQ175N10LG4 100V N-Channel Enhancement Mode Power MOSFET DDDescriptionDDDDD DWMQ175N10LG4 uses Wayon's 4th generation power trench SGSSMOSFET technology that has been especially tailored to minimize SSGSthe on-state resistance and yet maintain superior switching PDFN3030-8Lperformance. This device is well suited for high efficiency fast switching

 0.24. Size:622K  way-on
wmq175n10hg4.pdf

75N10
75N10

WMQ175N10HG4 100V N-Channel Enhancement Mode Power MOSFET DDDescriptionDDDDD DWMQ175N10HG4 uses Wayon's 4th generation power trench SGSSMOSFET technology that has been especially tailored to minimize SSGSthe on-state resistance and yet maintain superior switching PDFN3030-8Lperformance. This device is well suited for high efficiency fast switching

 0.25. Size:609K  way-on
wmo175n10hg4.pdf

75N10
75N10

WMO175N10HG4 100V N-Channel Enhancement Mode Power MOSFET DescriptionWMO175N10HG4 uses Wayon's 4th generation power trench MOSFET technology that has been especially tailored to minimize the on-state Dresistance and yet maintain superior switching performance. This Sdevice is well suited for high efficiency fast switching applications. GTO-252Features V = 100V, I =

 0.26. Size:770K  way-on
wms175n10lg4.pdf

75N10
75N10

WMS175N10LG4 100V N-Channel Enhancement Mode Power MOSFET DDDescriptionDDWMS175N10LG4 uses Wayon's 4th generation power trench MOSFET technology that has been especially tailored to minimize the on-state S SSresistance and yet maintain superior switching performance. This Gdevice is well suited for high efficiency fast switching applications. SOP-8LFeatures

 0.27. Size:216K  inchange semiconductor
ixta75n10p.pdf

75N10
75N10

isc N-Channel MOSFET Transistor IXTA75N10PDESCRIPTIONDrain Current I = 75A@ T =25D CDrain Source Voltage: V = 100V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONS .Designed for high current, high speed switching, switchmode power supplies (SMPS), consumer and industrial lighting,D

Datasheet: 40N10 , 50N15 , 60N05 , 60N05-16 , 60N06-18 , 60N10 , 6N70A , 75N06 , 4435 , 75NF75 , BUK436-100A , BUK436-100B , BUK436-200A , BUK436-200B , BUK436-60A , BUK436-60B , BUK436-800A .

 

 
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