All MOSFET. 75N10 Datasheet

 

75N10 Datasheet and Replacement


   Type Designator: 75N10
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 300 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 75 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 110 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm
   Package: TO-3
 

 75N10 substitution

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75N10 Datasheet (PDF)

 ..1. Size:228K  inchange semiconductor
75n10.pdf pdf_icon

75N10

INCHANGE Semiconductorisc N-Channel Mosfet Transistor 75N10FEATURESDrain Current I = 75A@ T =25D CDrain Source Voltage-: V =100V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching mode power suppliesGeneral purpose power amplifierABSOLUTE MAXIMUM RATINGS(T =25)a

 0.1. Size:1354K  rohm
rsd175n10fra.pdf pdf_icon

75N10

Data SheetAEC-Q101 Qualified4V Drive Nch MOSFET RSD175N10RSD175N10FRA Structure Dimensions (Unit : mm)Silicon N-channel MOSFETCPT36.5(SC-63)5.12.30.5Features1) Low on-resistance.4) 4V drive.0.754) High power package.0.650.9 2.3(1) (2) (3)2.3 0.51.0 ApplicationSwitching Packaging specifications Inner circuit1

 0.2. Size:1159K  rohm
rsd175n10.pdf pdf_icon

75N10

Data Sheet4V Drive Nch MOSFET RSD175N10 Structure Dimensions (Unit : mm)Silicon N-channel MOSFETCPT36.5(SC-63)5.12.30.5Features1) Low on-resistance.4) 4V drive.0.754) High power package.0.650.9 2.3(1) (2) (3)2.3 0.51.0 ApplicationSwitching Packaging specifications Inner circuit1Package TapingTypeCode TLBas

 0.3. Size:151K  ixys
ixfh75n10q ixft75n10q.pdf pdf_icon

75N10

Advanced Technical InformationIXFH 75N10Q VDSS = 100 VHiPerFETTMIXFT 75N10Q ID25 = 75 APower MOSFETs RDS(on) = 20 mWQ-Classt 200nsrr N-Channel Enhancement ModeAvalanche Rated, High dv/dtLow Gate Charge and CapacitancesSymbol Test Conditions Maximum Ratings TO-247 AD (IXFH)VDSS TJ = 25C to 150C 100 VVDGR TJ = 25C to 150C; RGS = 1 M 100 VVGS Continuous

Datasheet: 40N10 , 50N15 , 60N05 , 60N05-16 , 60N06-18 , 60N10 , 6N70A , 75N06 , IRF9540N , 75NF75 , BUK436-100A , BUK436-100B , BUK436-200A , BUK436-200B , BUK436-60A , BUK436-60B , BUK436-800A .

History: CRST049N08N | STP16NF06LFP

Keywords - 75N10 MOSFET datasheet

 75N10 cross reference
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