IPP015N04N Datasheet and Replacement
Type Designator: IPP015N04N
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 250 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 120 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 10 nS
Cossⓘ - Output Capacitance: 4000 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0015 Ohm
Package: TO220
IPP015N04N substitution
IPP015N04N Datasheet (PDF)
ipp015n04n ipb015n04n.pdf

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ipp015n04n.pdf

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IPP015N04NIIPP015N04NFEATURESStatic drain-source on-resistance:RDS(on) 1.5mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAX
ipp015n04n6 ipb015n04n6.pdf

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ipp015n04ng ipb015n04ng.pdf

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Datasheet: BUK445-400A , BUK445-400B , BUK445-600A , BUK445-600B , FMV09N70E , FRK250 , FRM230 , FRM240 , SKD502T , IPP023NE7N3 , IPP024N06N3 , IPP030N10N3 , IPP032N06N3 , IPP037N06L3 , IPP037N08N3 , IPP039N10N5 , IPP040N06N3 .
History: IRL530PBF | WMS04P10TS | SIHD4N80E | WNM2020 | NCE40H20A | 2N6659-2 | NTTFS020N06C
Keywords - IPP015N04N MOSFET datasheet
IPP015N04N cross reference
IPP015N04N equivalent finder
IPP015N04N lookup
IPP015N04N substitution
IPP015N04N replacement
History: IRL530PBF | WMS04P10TS | SIHD4N80E | WNM2020 | NCE40H20A | 2N6659-2 | NTTFS020N06C



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