IPP023NE7N3 MOSFET. Datasheet pdf. Equivalent
Type Designator: IPP023NE7N3
Marking Code: 023NE7N
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 300 W
Maximum Drain-Source Voltage |Vds|: 75 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 3.8 V
Maximum Drain Current |Id|: 120 A
Maximum Junction Temperature (Tj): 175 °C
Total Gate Charge (Qg): 155 nC
Rise Time (tr): 26 nS
Drain-Source Capacitance (Cd): 2420 pF
Maximum Drain-Source On-State Resistance (Rds): 0.0023 Ohm
Package: TO220
IPP023NE7N3 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IPP023NE7N3 Datasheet (PDF)
ipp023ne7n3 ipi023ne7n31.pdf
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ipp023ne7n3.pdf
INCHANGE Semiconductorisc N-Channel MOSFET Transistor IPP023NE7N3IIPP023NE7N3FEATURESStatic drain-source on-resistance:RDS(on) 2.3mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE M
ipp023ne7n3g ipi023ne7n3g.pdf
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ipb023n04n ipp023n04ng ipb023n04ng.pdf
pe IPP023N04N GIPB023N04N G 3 Power-TransistorProduct SummaryFeaturesV 4 D Q &( , - 7@B ( + :?8 2?5 . ?:?D6BBEAD:3=6 )@G6B ,EAA=I R m , @? >2H 1)Q * E2=:7:65 244@B5:?8 D@ $ 7@B D2B86D 2AA=:42D:@?CI DQ ' 492??6=Q '@B>2= =6F6=Q . =DB2 =@G @? B6C:CD2?46 RD n)Q F2=2?496 D6CD65Q )3 7B66 A=2D:?8 + @", 4@>A=:2?DQ "2=@86? 7B66 244@B5:?8 D@ # Type #) ' '
ipp023n10n5.pdf
MOSFETMetal Oxide Semiconductor Field Effect TransistorOptiMOSTMOptiMOS5 Power-Transistor, 100 VIPP023N10N5Data SheetRev. 2.1FinalPower Management & MultimarketOptiMOS5 Power-Transistor, 100 VIPP023N10N5TO-220-31 DescriptiontabFeatures N-channel, normal level Optimized for FOMOSS Very low on-resistance RDS(on) 175 C operating temperatur
ipp023n08n5.pdf
MOSFETMetal Oxide Semiconductor Field Effect TransistorOptiMOSTMOptiMOS5 Power-Transistor, 80 VIPP023N08N5Data SheetRev. 2.0FinalPower Management & MultimarketOptiMOS5 Power-Transistor, 80 VIPP023N08N5TO-220-31 DescriptiontabFeatures Ideal for high frequency switching and sync. rec. Excellent gate charge x R product (FOM)DS(on) Very low on-resis
ipp023n04n-g ipb023n04n-g.pdf
Type IPP023N04N GIPB023N04N GOptiMOS3 Power-TransistorProduct SummaryFeaturesV 40 VDS MOSFET for ORing and Uninterruptible Power Supply R 2.3mDS(on),max Qualified according to JEDEC1) for target applicationsI 90 AD N-channel Normal level Ultra-low on-resistance RDS(on) 100% Avalanche tested Pb-free plating; RoHS compliant Hal
ipp023n10n5.pdf
IPP023N10N5www.VBsemi.twN-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY ThunderFET power MOSFETVDS (V) RDS(on) () MAX. ID (A) d Qg (TYP.) Maximum 175 C junction temperature0.005 at VGS = 10 V 120100 72 100 % Rg and UIS tested0.006 at VGS = 7.5 V 120 Material categorization:for definitions of compliance please seeDTO-220ABGSSSDG
ipp023n04n.pdf
isc N-Channel MOSFET Transistor IPP023N04N,IIPP023N04NFEATURESStatic drain-source on-resistance:RDS(on) 2.3mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFor ORing and Uninterruptible Power SupplyABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMET
Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRF4905 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
