Справочник MOSFET. IPP023NE7N3

 

IPP023NE7N3 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: IPP023NE7N3
   Маркировка: 023NE7N
   Тип транзистора: MOSFET
   Полярность: N
   Максимальная рассеиваемая мощность (Pd): 300 W
   Предельно допустимое напряжение сток-исток |Uds|: 75 V
   Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
   Пороговое напряжение включения |Ugs(th)|: 3.8 V
   Максимально допустимый постоянный ток стока |Id|: 120 A
   Максимальная температура канала (Tj): 175 °C
   Общий заряд затвора (Qg): 155 nC
   Время нарастания (tr): 26 ns
   Выходная емкость (Cd): 2420 pf
   Сопротивление сток-исток открытого транзистора (Rds): 0.0023 Ohm
   Тип корпуса: TO220

 Аналог (замена) для IPP023NE7N3

 

 

IPP023NE7N3 Datasheet (PDF)

 ..1. Size:846K  infineon
ipp023ne7n3 ipi023ne7n31.pdf

IPP023NE7N3
IPP023NE7N3

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 ..2. Size:246K  inchange semiconductor
ipp023ne7n3.pdf

IPP023NE7N3
IPP023NE7N3

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IPP023NE7N3IIPP023NE7N3FEATURESStatic drain-source on-resistance:RDS(on) 2.3mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE M

 0.1. Size:836K  infineon
ipp023ne7n3g ipi023ne7n3g.pdf

IPP023NE7N3
IPP023NE7N3

## ! ! # ! ! TM #:A0 m D n) m xQ #4513I CG9D389>7 1>4 3?>F5BD5BC 1 DQ H35

 7.1. Size:583K  infineon
ipb023n04n ipp023n04ng ipb023n04ng.pdf

IPP023NE7N3
IPP023NE7N3

pe IPP023N04N GIPB023N04N G 3 Power-TransistorProduct SummaryFeaturesV 4 D Q &( , - 7@B ( + :?8 2?5 . ?:?D6BBEAD:3=6 )@G6B ,EAA=I R m , @? >2H 1)Q * E2=:7:65 244@B5:?8 D@ $ 7@B D2B86D 2AA=:42D:@?CI DQ ' 492??6=Q '@B>2= =6F6=Q . =DB2 =@G @? B6C:CD2?46 RD n)Q F2=2?496 D6CD65Q )3 7B66 A=2D:?8 + @", 4@>A=:2?DQ "2=@86? 7B66 244@B5:?8 D@ # Type #) ' '

 7.2. Size:1330K  infineon
ipp023n10n5.pdf

IPP023NE7N3
IPP023NE7N3

MOSFETMetal Oxide Semiconductor Field Effect TransistorOptiMOSTMOptiMOS5 Power-Transistor, 100 VIPP023N10N5Data SheetRev. 2.1FinalPower Management & MultimarketOptiMOS5 Power-Transistor, 100 VIPP023N10N5TO-220-31 DescriptiontabFeatures N-channel, normal level Optimized for FOMOSS Very low on-resistance RDS(on) 175 C operating temperatur

 7.3. Size:1808K  infineon
ipp023n08n5.pdf

IPP023NE7N3
IPP023NE7N3

MOSFETMetal Oxide Semiconductor Field Effect TransistorOptiMOSTMOptiMOS5 Power-Transistor, 80 VIPP023N08N5Data SheetRev. 2.0FinalPower Management & MultimarketOptiMOS5 Power-Transistor, 80 VIPP023N08N5TO-220-31 DescriptiontabFeatures Ideal for high frequency switching and sync. rec. Excellent gate charge x R product (FOM)DS(on) Very low on-resis

 7.4. Size:245K  infineon
ipp023n04n-g ipb023n04n-g.pdf

IPP023NE7N3
IPP023NE7N3

Type IPP023N04N GIPB023N04N GOptiMOS3 Power-TransistorProduct SummaryFeaturesV 40 VDS MOSFET for ORing and Uninterruptible Power Supply R 2.3mDS(on),max Qualified according to JEDEC1) for target applicationsI 90 AD N-channel Normal level Ultra-low on-resistance RDS(on) 100% Avalanche tested Pb-free plating; RoHS compliant Hal

 7.5. Size:1621K  cn vbsemi
ipp023n10n5.pdf

IPP023NE7N3
IPP023NE7N3

IPP023N10N5www.VBsemi.twN-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY ThunderFET power MOSFETVDS (V) RDS(on) () MAX. ID (A) d Qg (TYP.) Maximum 175 C junction temperature0.005 at VGS = 10 V 120100 72 100 % Rg and UIS tested0.006 at VGS = 7.5 V 120 Material categorization:for definitions of compliance please seeDTO-220ABGSSSDG

 7.6. Size:245K  inchange semiconductor
ipp023n04n.pdf

IPP023NE7N3
IPP023NE7N3

isc N-Channel MOSFET Transistor IPP023N04N,IIPP023N04NFEATURESStatic drain-source on-resistance:RDS(on) 2.3mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFor ORing and Uninterruptible Power SupplyABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMET

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