IPP023NE7N3 - описание и поиск аналогов

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INCHANGE Semiconductor isc N-Channel MOSFET Transistor IPP023NE7N3 IIPP023NE7N3 FEATURES Static drain-source on-resistance RDS(on) 2.3m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUTE M

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pe IPP023N04N G IPB023N04N G 3 Power-Transistor Product Summary Features V 4 D Q &( , - 7@B ( + ?8 2?5 . ? ?D6BBEAD 3=6 )@G6B ,EAA=I R m , @? >2H 1) Q * E2= 7 65 244@B5 ?8 D@ $ 7@B D2B86D 2AA= 42D @?C I D Q ' 492??6= Q '@B>2= =6F6= Q . =DB2 =@G @? B6C CD2?46 R D n) Q F2=2?496 D6CD65 Q )3 7B66 A=2D ?8 + @", 4@>A= 2?D Q "2=@86? 7B66 244@B5 ?8 D@ # Type #) ' '

MOSFET Metal Oxide Semiconductor Field Effect Transistor OptiMOSTM OptiMOS 5 Power-Transistor, 100 V IPP023N10N5 Data Sheet Rev. 2.1 Final Power Management & Multimarket OptiMOS 5 Power-Transistor, 100 V IPP023N10N5 TO-220-3 1 Description tab Features N-channel, normal level Optimized for FOM OSS Very low on-resistance R DS(on) 175 C operating temperatur

MOSFET Metal Oxide Semiconductor Field Effect Transistor OptiMOSTM OptiMOS 5 Power-Transistor, 80 V IPP023N08N5 Data Sheet Rev. 2.0 Final Power Management & Multimarket OptiMOS 5 Power-Transistor, 80 V IPP023N08N5 TO-220-3 1 Description tab Features Ideal for high frequency switching and sync. rec. Excellent gate charge x R product (FOM) DS(on) Very low on-resis

Type IPP023N04N G IPB023N04N G OptiMOS 3 Power-Transistor Product Summary Features V 40 V DS MOSFET for ORing and Uninterruptible Power Supply R 2.3 m DS(on),max Qualified according to JEDEC1) for target applications I 90 A D N-channel Normal level Ultra-low on-resistance R DS(on) 100% Avalanche tested Pb-free plating; RoHS compliant Hal

IPP023N10N5 www.VBsemi.tw N-Channel 100 V (D-S) MOSFET FEATURES PRODUCT SUMMARY ThunderFET power MOSFET VDS (V) RDS(on) ( ) MAX. ID (A) d Qg (TYP.) Maximum 175 C junction temperature 0.005 at VGS = 10 V 120 100 72 100 % Rg and UIS tested 0.006 at VGS = 7.5 V 120 Material categorization for definitions of compliance please see D TO-220AB G S S S D G

isc N-Channel MOSFET Transistor IPP023N04N,IIPP023N04N FEATURES Static drain-source on-resistance RDS(on) 2.3m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION For ORing and Uninterruptible Power Supply ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMET