IPP023NE7N3 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: IPP023NE7N3
Маркировка: 023NE7N
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 300 W
Предельно допустимое напряжение сток-исток |Uds|: 75 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Пороговое напряжение включения |Ugs(th)|: 3.8 V
Максимально допустимый постоянный ток стока |Id|: 120 A
Максимальная температура канала (Tj): 175 °C
Общий заряд затвора (Qg): 155 nC
Время нарастания (tr): 26 ns
Выходная емкость (Cd): 2420 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.0023 Ohm
Тип корпуса: TO220
Аналог (замена) для IPP023NE7N3
IPP023NE7N3 Datasheet (PDF)
ipp023ne7n3 ipi023ne7n31.pdf
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ipp023ne7n3.pdf
INCHANGE Semiconductorisc N-Channel MOSFET Transistor IPP023NE7N3IIPP023NE7N3FEATURESStatic drain-source on-resistance:RDS(on) 2.3mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE M
ipp023ne7n3g ipi023ne7n3g.pdf
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ipb023n04n ipp023n04ng ipb023n04ng.pdf
pe IPP023N04N GIPB023N04N G 3 Power-TransistorProduct SummaryFeaturesV 4 D Q &( , - 7@B ( + :?8 2?5 . ?:?D6BBEAD:3=6 )@G6B ,EAA=I R m , @? >2H 1)Q * E2=:7:65 244@B5:?8 D@ $ 7@B D2B86D 2AA=:42D:@?CI DQ ' 492??6=Q '@B>2= =6F6=Q . =DB2 =@G @? B6C:CD2?46 RD n)Q F2=2?496 D6CD65Q )3 7B66 A=2D:?8 + @", 4@>A=:2?DQ "2=@86? 7B66 244@B5:?8 D@ # Type #) ' '
ipp023n10n5.pdf
MOSFETMetal Oxide Semiconductor Field Effect TransistorOptiMOSTMOptiMOS5 Power-Transistor, 100 VIPP023N10N5Data SheetRev. 2.1FinalPower Management & MultimarketOptiMOS5 Power-Transistor, 100 VIPP023N10N5TO-220-31 DescriptiontabFeatures N-channel, normal level Optimized for FOMOSS Very low on-resistance RDS(on) 175 C operating temperatur
ipp023n08n5.pdf
MOSFETMetal Oxide Semiconductor Field Effect TransistorOptiMOSTMOptiMOS5 Power-Transistor, 80 VIPP023N08N5Data SheetRev. 2.0FinalPower Management & MultimarketOptiMOS5 Power-Transistor, 80 VIPP023N08N5TO-220-31 DescriptiontabFeatures Ideal for high frequency switching and sync. rec. Excellent gate charge x R product (FOM)DS(on) Very low on-resis
ipp023n04n-g ipb023n04n-g.pdf
Type IPP023N04N GIPB023N04N GOptiMOS3 Power-TransistorProduct SummaryFeaturesV 40 VDS MOSFET for ORing and Uninterruptible Power Supply R 2.3mDS(on),max Qualified according to JEDEC1) for target applicationsI 90 AD N-channel Normal level Ultra-low on-resistance RDS(on) 100% Avalanche tested Pb-free plating; RoHS compliant Hal
ipp023n10n5.pdf
IPP023N10N5www.VBsemi.twN-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY ThunderFET power MOSFETVDS (V) RDS(on) () MAX. ID (A) d Qg (TYP.) Maximum 175 C junction temperature0.005 at VGS = 10 V 120100 72 100 % Rg and UIS tested0.006 at VGS = 7.5 V 120 Material categorization:for definitions of compliance please seeDTO-220ABGSSSDG
ipp023n04n.pdf
isc N-Channel MOSFET Transistor IPP023N04N,IIPP023N04NFEATURESStatic drain-source on-resistance:RDS(on) 2.3mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFor ORing and Uninterruptible Power SupplyABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMET
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