IPP12CN10N MOSFET Datasheet: N-Ch, 100V, 67A. Full specification with pinout and replacement list

IPP12CN10N Specs and Replacement

Type Designator: IPP12CN10N

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 125 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 67 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 21 nS

Cossⓘ - Output Capacitance: 489 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0129 Ohm

Package: TO220

IPP12CN10N substitution

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IPP12CN10N datasheet

..1. Size:246K inchange semiconductor
ipp12cn10n.pdf pdf_icon

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IPP12CN10N IIPP12CN10N FEATURES Static drain-source on-resistance RDS(on) 12.9m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUTE MA... See More ⇒

0.1. Size:858K infineon
ipb12cn10ng ipd12cn10ng ipi12cn10ng ipp12cn10ng ipb12cn10ng ipi12cn10ng.pdf pdf_icon

IPB12CN10N G IPD12CN10N G IPI12CN10N G IPP12CN10N G OptiMOS 2 Power-Transistor Product Summary Features VDS 100 V N-channel, normal level RDS(on),max (TO252) 12.4 mW Excellent gate charge x R product (FOM) DS(on) ID 67 A Very low on-resistance R DS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1)... See More ⇒

0.2. Size:623K infineon
ipb12cn10n-g ipd12cn10n-g ipi12cn10n-g ipp12cn10n-g.pdf pdf_icon

IPB12CN10N G IPD12CN10N G IPI12CN10N G IPP12CN10N G OptiMOS 2 Power-Transistor Product Summary Features V 100 V DS N-channel, normal level R (TO252) 12.4 m DS(on),max Excellent gate charge x R product (FOM) DS(on) I 67 A D Very low on-resistance R DS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC... See More ⇒

5.1. Size:614K infineon
ipp12cn10l-g ips12cn10l-g.pdf pdf_icon

IPS12CN10L G IPP12CN10L G OptiMOS 2 Power-Transistor Product Summary Features VDS 100 V N-channel, logic level RDS(on),max 12 mW Excellent gate charge x R product (FOM) DS(on) ID 69 A Very low on-resistance R DS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for target application Ideal for high... See More ⇒