IPW60R080P7 Specs and Replacement
Type Designator: IPW60R080P7
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ
- Maximum Power Dissipation: 129 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 37 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 10 nS
Cossⓘ -
Output Capacitance: 37 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.08 Ohm
Package: TO247
- MOSFET ⓘ Cross-Reference Search
IPW60R080P7 datasheet
..1. Size:1409K infineon
ipw60r080p7.pdf 
IPW60R080P7 MOSFET PG-TO 247-3 600V CoolMOS P7 Power Transistor The CoolMOS 7th generation platform is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The 600V CoolMOS P7 series is the successor to the CoolMOS P6 series. It combines the benefits of a fast switching SJ MOS... See More ⇒
..2. Size:243K inchange semiconductor
ipw60r080p7.pdf
INCHANGE Semiconductor isc N-Channel MOSFET Transistor IPW60R080P7 IIPW60R080P7 FEATURES Static drain-source on-resistance RDS(on) 80m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Sou... See More ⇒
7.1. Size:378K infineon
ipw60r099cpa.pdf
IPW60R099CPA CoolMOSTM Power Transistor Product Summary V 600 V DS R 0.105 DS(on),max Q 60 nC g,typ Features Lowest figure-of-merit RON x Qg Ultra low gate charge Extreme dv/dt rated PG-TO247-3 High peak current capability Automotive AEC Q101 qualified Green package (RoHS compliant) CoolMOS CPA is specially designed for DC/DC converters for Aut... See More ⇒
7.3. Size:378K infineon
ipw60r045cpa.pdf
IPW60R045CPA CoolMOS Power Transistor Product Summary V 600 V DS R 0.045 DS(on),max Q 150 nC g,typ Features Worldwide best R in TO247 ds,on Ultra low gate charge PG-TO247-3 Extreme dv/dt rated High peak current capability Automotive AEC Q101 qualified Green package (RoHS compliant) CoolMOS CPA is specially designed for DC/DC converters for A... See More ⇒
7.4. Size:644K infineon
ipw60r099cp.pdf
IPW60R099CP TM C IMOSTM # A0IN V . J6A>;> 9 688DG9>CC6CI PG TO247 1 V 2 AIG6 ADL ... See More ⇒
7.5. Size:1883K infineon
ipw60r041p6.pdf
MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS P6 600V CoolMOS P6 Power Transistor IPW60R041P6 Data Sheet Rev. 2.0 Final Power Management & Multimarket 600V CoolMOS P6 Power Transistor IPW60R041P6 TO-247 1 Description CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pion... See More ⇒
7.6. Size:1375K infineon
ipw60r090cfd7.pdf
IPW60R090CFD7 MOSFET PG-TO 247-3 600V CoolMOS CFD7 Power Transistor CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The latest CoolMOS CFD7 is the successor to the CoolMOS CFD2 series and is an optimized platform tailored to target soft switching applications s... See More ⇒
7.9. Size:2269K infineon
ipa60r099p6 ipp60r099p6 ipw60r099p6 ipw60r099p6 ipp60r099p6 ipa60r099p6.pdf
MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS P6 600V CoolMOS P6 Power Transistor IPx60R099P6 Data Sheet Rev. 2.1 Final Power Management & Multimarket 600V CoolMOS P6 Power Transistor IPW60R099P6, IPP60R099P6, IPA60R099P6 TO-247 TO-220 TO-220 FP 1 Description tab CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed accordi... See More ⇒
7.10. Size:1210K infineon
ipw60r031cfd7.pdf
IPW60R031CFD7 MOSFET PG-TO 247-3 600V CoolMOS CFD7 Power Transistor CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The latest CoolMOS CFD7 is the successor to the CoolMOS CFD2 series and is an optimized platform tailored to target soft switching applications s... See More ⇒
7.11. Size:1026K infineon
ipw60r037csfd.pdf
IPW60R037CSFD MOSFET PG-TO 247-3 600V CoolMOS CSFD Power Transistor CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The IPW60R037CSFD is an optimized device tailored to address the off board EV charging market segment. Thanks to low gate charge (Q ) and improved swi... See More ⇒
7.12. Size:1855K infineon
ipw60r070p6.pdf
MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS P6 600V CoolMOS P6 Power Transistor IPW60R070P6 Data Sheet Rev. 2.0 Final Power Management & Multimarket 600V CoolMOS P6 Power Transistor IPW60R070P6 TO-247 1 Description CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pion... See More ⇒
7.13. Size:1400K infineon
ipw60r099p7.pdf
IPW60R099P7 MOSFET PG-TO 247-3 600V CoolMOS P7 Power Transistor The CoolMOS 7th generation platform is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The 600V CoolMOS P7 series is the successor to the CoolMOS P6 series. It combines the benefits of a fast switching SJ MOS... See More ⇒
7.14. Size:1552K infineon
ipw60r040c7.pdf
MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C7 600V CoolMOS C7 Power Transistor IPW60R040C7 Data Sheet Rev. 2.0 Final Power Management & Multimarket 600V CoolMOS C7 Power Transistor IPW60R040C7 TO-247 1 Description CoolMOS C7 is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and p... See More ⇒
7.16. Size:1541K infineon
ipw60r099c7.pdf
MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C7 600V CoolMOS C7 Power Transistor IPW60R099C7 Data Sheet Rev. 2.0 Final Power Management & Multimarket 600V CoolMOS C7 Power Transistor IPW60R099C7 TO-247 1 Description CoolMOS C7 is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and p... See More ⇒
7.17. Size:378K infineon
ipw60r075cpa.pdf
IPW60R075CPA CoolMOSTM Power Transistor Product Summary V 600 V DS R 0.075 DS(on),max Q 87 nC g,typ Features Lowest figure-of-merit RON x Qg Ultra low gate charge Extreme dv/dt rated PG-TO247-3 High peak current capability Automotive AEC Q101 qualified Green package (RoHS compliant) CoolMOS CPA is specially designed for DC/DC converters for Aut... See More ⇒
7.18. Size:2087K infineon
ipa60r099c6 ipb60r099c6 ipp60r099c6 ipw60r099c6.pdf
MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V CoolMOS C6 Power Transistor IPx60R099C6 Data Sheet Rev. 2.1, 2010-02-09 Final Industrial & Multimarket 600V CoolMOS C6 Power Transistor IPA60R099C6, IPB60R099C6 IPP60R099C6 IPW60R099C6 1 Description CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the supe... See More ⇒
7.20. Size:1179K infineon
ipw60r040cfd7.pdf
IPW60R040CFD7 MOSFET PG-TO 247-3 600V CoolMOS CFD7 Power Transistor CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The latest CoolMOS CFD7 is the successor to the CoolMOS CFD2 series and is an optimized platform tailored to target soft switching applications s... See More ⇒
7.21. Size:1357K infineon
ipw60r045p7.pdf
IPW60R045P7 MOSFET PG-TO 247-3 600V CoolMOS P7 Power Transistor The CoolMOS 7th generation platform is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The 600V CoolMOS P7 series is the successor to the CoolMOS P6 series. It combines the benefits of a fast switching SJ MOS... See More ⇒
7.22. Size:1384K infineon
ipw60r070cfd7.pdf
IPW60R070CFD7 MOSFET PG-TO 247-3 600V CoolMOS CFD7 Power Transistor CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The latest CoolMOS CFD7 is the successor to the CoolMOS CFD2 series and is an optimized platform tailored to target soft switching applications s... See More ⇒
7.23. Size:1350K infineon
ipw60r060c7.pdf
MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C7 600V CoolMOS C7 Power Transistor IPW60R060C7 Data Sheet Rev. 2.0 Final Power Management & Multimarket 600V CoolMOS C7 Power Transistor IPW60R060C7 TO-247 1 Description CoolMOS C7 is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and p... See More ⇒
7.24. Size:1351K infineon
ipw60r060p7.pdf
IPW60R060P7 MOSFET PG-TO 247-3 600V CoolMOS P7 Power Transistor The CoolMOS 7th generation platform is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The 600V CoolMOS P7 series is the successor to the CoolMOS P6 series. It combines the benefits of a fast switching SJ MOS... See More ⇒
7.25. Size:1025K infineon
ipw60r024cfd7.pdf
IPW60R024CFD7 MOSFET PG-TO 247-3 600V CoolMOS CFD7 Power Transistor CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The latest CoolMOS CFD7 is the successor to the CoolMOS CFD2 series and is an optimized platform tailored to target soft switching applications s... See More ⇒
7.26. Size:239K inchange semiconductor
ipw60r070c6.pdf
INCHANGE Semiconductor isc N-Channel MOSFET Transistor IPW60R070C6 IIPW60R070C6 FEATURES Static drain-source on-resistance RDS(on) 70m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Sou... See More ⇒
7.27. Size:243K inchange semiconductor
ipw60r099p6.pdf
INCHANGE Semiconductor isc N-Channel MOSFET Transistor IPW60R099P6 IIPW60R099P6 FEATURES Static drain-source on-resistance RDS(on) 99m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Sou... See More ⇒
7.28. Size:242K inchange semiconductor
ipw60r075cp.pdf
INCHANGE Semiconductor isc N-Channel MOSFET Transistor IPW60R075CP IIPW60R075CP FEATURES Static drain-source on-resistance RDS(on) 75m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Sou... See More ⇒
7.29. Size:243K inchange semiconductor
ipw60r099cp.pdf
INCHANGE Semiconductor isc N-Channel MOSFET Transistor IPW60R099CP IIPW60R099CP FEATURES Static drain-source on-resistance RDS(on) 99m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High Peak Current Capability ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNI... See More ⇒
7.30. Size:243K inchange semiconductor
ipw60r041p6.pdf
INCHANGE Semiconductor isc N-Channel MOSFET Transistor IPW60R041P6 IIPW60R041P6 FEATURES Static drain-source on-resistance RDS(on) 41m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Sou... See More ⇒
7.31. Size:224K inchange semiconductor
ipw60r045cp.pdf
INCHANGE Semiconductor isc N-Channel MOSFET Transistor IPW60R045CP IIPW60R045CP FEATURES Static drain-source on-resistance RDS(on) 45m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High peak current capability ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT... See More ⇒
7.32. Size:242K inchange semiconductor
ipw60r041c6.pdf
isc N-Channel MOSFET Transistor IPW60R041C6 IIPW60R041C6 FEATURES Static drain-source on-resistance RDS(on) 41m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast Switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 600 V DSS V... See More ⇒
7.33. Size:248K inchange semiconductor
ipw60r070p6.pdf
INCHANGE Semiconductor isc N-Channel MOSFET Transistor IPW60R070P6 IIPW60R070P6 FEATURES Static drain-source on-resistance RDS(on) 70m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Sou... See More ⇒
7.34. Size:242K inchange semiconductor
ipw60r099p7.pdf
INCHANGE Semiconductor isc N-Channel MOSFET Transistor IPW60R099P7 IIPW60R099P7 FEATURES Static drain-source on-resistance RDS(on) 99m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast Switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Sou... See More ⇒
7.35. Size:242K inchange semiconductor
ipw60r040c7.pdf
INCHANGE Semiconductor isc N-Channel MOSFET Transistor IPW60R040C7 IIPW60R040C7 FEATURES Static drain-source on-resistance RDS(on) 40m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Suitable for hard and soft switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER V... See More ⇒
7.36. Size:243K inchange semiconductor
ipw60r099c7.pdf
INCHANGE Semiconductor isc N-Channel MOSFET Transistor IPW60R099C7 IIPW60R099C7 FEATURES Static drain-source on-resistance RDS(on) 99m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Suitable for hard and soft switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER V... See More ⇒
7.37. Size:243K inchange semiconductor
ipw60r070cfd7.pdf
INCHANGE Semiconductor isc N-Channel MOSFET Transistor IPW60R070CFD7 IIPW60R070CFD7 FEATURES Static drain-source on-resistance RDS(on) 70m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain... See More ⇒
7.38. Size:243K inchange semiconductor
ipw60r060c7.pdf
INCHANGE Semiconductor isc N-Channel MOSFET Transistor IPW60R060C7 IIPW60R060C7 FEATURES Static drain-source on-resistance RDS(on) 60m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Suitable for hard and soft switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER V... See More ⇒
Detailed specifications: IPP126N10N3, IPP12CN10N, IPP180N10N3, IPP26CN10N, IPP35CN10N, IPP80CN10N, IPW60R060C7, IPW60R070CFD7, AON7403, IPW60R099P7, IPW60R120C7, IPW60R170CFD7, IRF200P223, IRF250P225, IRF60B217, IRF630NSTRRPBF, IRFP4127
Keywords - IPW60R080P7 MOSFET specs
IPW60R080P7 cross reference
IPW60R080P7 equivalent finder
IPW60R080P7 pdf lookup
IPW60R080P7 substitution
IPW60R080P7 replacement
Need a MOSFET replacement?
Our guide shows you how to find a perfect substitute by comparing key parameters and specs
