IPW60R080P7 - параметры транзистора MOSFET, его аналоги, datasheet

IPW60R080P7 Даташит. Основные параметры и характеристики. Поиск аналогов

   Наименование прибора: IPW60R080P7
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 129 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 37 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 10 ns
   Cossⓘ - Выходная емкость: 37 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.08 Ohm
   Тип корпуса: TO247

Аналог (замена) для IPW60R080P7

- подбор MOSFET транзистора по параметрам

IPW60R080P7 Datasheet (PDF)

..1. Size:1409K infineon
ipw60r080p7.pdf pdf_icon

IPW60R080P7MOSFETPG-TO 247-3600V CoolMOS P7 Power TransistorThe CoolMOS 7th generation platform is a revolutionary technology forhigh voltage power MOSFETs, designed according to the superjunction(SJ) principle and pioneered by Infineon Technologies. The 600VCoolMOS P7 series is the successor to the CoolMOS P6 series. Itcombines the benefits of a fast switching SJ MOS

..2. Size:243K inchange semiconductor
ipw60r080p7.pdf pdf_icon

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IPW60R080P7IIPW60R080P7FEATURESStatic drain-source on-resistance:RDS(on)80mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Sou

7.1. Size:378K infineon
ipw60r099cpa.pdf pdf_icon

IPW60R099CPACoolMOSTM Power TransistorProduct SummaryV 600 VDSR 0.105DS(on),maxQ 60 nCg,typFeatures Lowest figure-of-merit RON x Qg Ultra low gate charge Extreme dv/dt ratedPG-TO247-3 High peak current capability Automotive AEC Q101 qualified Green package (RoHS compliant)CoolMOS CPA is specially designed for: DC/DC converters for Aut

7.2. Size:533K infineon
ipw60r075cp rev23.pdf pdf_icon

IPW60R075CPCIMOS&! #:A0INV . J6A>;>:9 688DG9>CC6CIPGTO247 V 2 AIG6 ADL

7.3. Size:378K infineon
ipw60r045cpa.pdf pdf_icon

IPW60R045CPACoolMOS Power TransistorProduct SummaryV 600 VDSR 0.045DS(on),maxQ 150 nCg,typFeatures Worldwide best R in TO247ds,on Ultra low gate chargePG-TO247-3 Extreme dv/dt rated High peak current capability Automotive AEC Q101 qualified Green package (RoHS compliant)CoolMOS CPA is specially designed for: DC/DC converters for A

7.4. Size:644K infineon
ipw60r099cp.pdf pdf_icon

IPW60R099CPTMCIMOSTM #:A0INV . J6A>;>:9 688DG9>CC6CIPGTO247 1V 2 AIG6 ADL

7.5. Size:1883K infineon
ipw60r041p6.pdf pdf_icon

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS P6600V CoolMOS P6 Power TransistorIPW60R041P6Data SheetRev. 2.0FinalPower Management & Multimarket600V CoolMOS P6 Power TransistorIPW60R041P6TO-2471 DescriptionCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andpion

7.6. Size:1375K infineon
ipw60r090cfd7.pdf pdf_icon

IPW60R090CFD7MOSFETPG-TO 247-3600V CoolMOS CFD7 Power TransistorCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies. The latest CoolMOS CFD7 is thesuccessor to the CoolMOS CFD2 series and is an optimized platformtailored to target soft switching applications s

7.7. Size:644K infineon
ipw60r045cp.pdf pdf_icon

IPW60R045CPCIMOS #:A0

7.8. Size:1385K infineon
ipw60r099c6.pdf pdf_icon

MOSFET+ =L9D - PA

7.9. Size:2269K infineon
ipa60r099p6 ipp60r099p6 ipw60r099p6 ipw60r099p6 ipp60r099p6 ipa60r099p6.pdf pdf_icon

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS P6600V CoolMOS P6 Power TransistorIPx60R099P6Data SheetRev. 2.1FinalPower Management & Multimarket600V CoolMOS P6 Power TransistorIPW60R099P6, IPP60R099P6, IPA60R099P6TO-247 TO-220 TO-220 FP1 DescriptiontabCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed accordi

7.10. Size:1210K infineon
ipw60r031cfd7.pdf pdf_icon

IPW60R031CFD7MOSFETPG-TO 247-3600V CoolMOS CFD7 Power TransistorCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies. The latest CoolMOS CFD7 is thesuccessor to the CoolMOS CFD2 series and is an optimized platformtailored to target soft switching applications s

7.11. Size:1026K infineon
ipw60r037csfd.pdf pdf_icon

IPW60R037CSFDMOSFETPG-TO 247-3600V CoolMOS CSFD Power TransistorCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies. The IPW60R037CSFD is anoptimized device tailored to address the off board EV charging marketsegment.Thanks to low gate charge (Q ) and improved swi

7.12. Size:1855K infineon
ipw60r070p6.pdf pdf_icon

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS P6600V CoolMOS P6 Power TransistorIPW60R070P6Data SheetRev. 2.0FinalPower Management & Multimarket600V CoolMOS P6 Power TransistorIPW60R070P6TO-2471 DescriptionCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andpion

7.13. Size:1400K infineon
ipw60r099p7.pdf pdf_icon

IPW60R099P7MOSFETPG-TO 247-3600V CoolMOS P7 Power TransistorThe CoolMOS 7th generation platform is a revolutionary technology forhigh voltage power MOSFETs, designed according to the superjunction(SJ) principle and pioneered by Infineon Technologies. The 600VCoolMOS P7 series is the successor to the CoolMOS P6 series. Itcombines the benefits of a fast switching SJ MOS

7.14. Size:1552K infineon
ipw60r040c7.pdf pdf_icon

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C7600V CoolMOS C7 Power TransistorIPW60R040C7Data SheetRev. 2.0FinalPower Management & Multimarket600V CoolMOS C7 Power TransistorIPW60R040C7TO-2471 DescriptionCoolMOS C7 is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andp

7.15. Size:708K infineon
ipw60r070c6 v2.1a .pdf pdf_icon

MOSFET*

7.16. Size:1541K infineon
ipw60r099c7.pdf pdf_icon

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C7600V CoolMOS C7 Power TransistorIPW60R099C7Data SheetRev. 2.0FinalPower Management & Multimarket600V CoolMOS C7 Power TransistorIPW60R099C7TO-2471 DescriptionCoolMOS C7 is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andp

7.17. Size:378K infineon
ipw60r075cpa.pdf pdf_icon

IPW60R075CPACoolMOSTM Power TransistorProduct SummaryV 600 VDSR 0.075DS(on),maxQ 87 nCg,typFeatures Lowest figure-of-merit RON x Qg Ultra low gate charge Extreme dv/dt ratedPG-TO247-3 High peak current capability Automotive AEC Q101 qualified Green package (RoHS compliant)CoolMOS CPA is specially designed for: DC/DC converters for Aut

7.18. Size:2087K infineon
ipa60r099c6 ipb60r099c6 ipp60r099c6 ipw60r099c6.pdf pdf_icon

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C6600V CoolMOS C6 Power TransistorIPx60R099C6 Data SheetRev. 2.1, 2010-02-09Final Industrial & Multimarket600V CoolMOS C6 Power Transistor IPA60R099C6, IPB60R099C6IPP60R099C6 IPW60R099C61 DescriptionCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the supe

7.19. Size:862K infineon
ipw60r041c6 .pdf pdf_icon

MOSFET*

7.20. Size:1179K infineon
ipw60r040cfd7.pdf pdf_icon

IPW60R040CFD7MOSFETPG-TO 247-3600V CoolMOS CFD7 Power TransistorCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies. The latest CoolMOS CFD7 is thesuccessor to the CoolMOS CFD2 series and is an optimized platformtailored to target soft switching applications s

7.21. Size:1357K infineon
ipw60r045p7.pdf pdf_icon

IPW60R045P7MOSFETPG-TO 247-3600V CoolMOS P7 Power TransistorThe CoolMOS 7th generation platform is a revolutionary technology forhigh voltage power MOSFETs, designed according to the superjunction(SJ) principle and pioneered by Infineon Technologies. The 600VCoolMOS P7 series is the successor to the CoolMOS P6 series. Itcombines the benefits of a fast switching SJ MOS

7.22. Size:1384K infineon
ipw60r070cfd7.pdf pdf_icon

IPW60R070CFD7MOSFETPG-TO 247-3600V CoolMOS CFD7 Power TransistorCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies. The latest CoolMOS CFD7 is thesuccessor to the CoolMOS CFD2 series and is an optimized platformtailored to target soft switching applications s

7.23. Size:1350K infineon
ipw60r060c7.pdf pdf_icon

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C7600V CoolMOS C7 Power TransistorIPW60R060C7Data SheetRev. 2.0FinalPower Management & Multimarket600V CoolMOS C7 Power TransistorIPW60R060C7TO-2471 DescriptionCoolMOS C7 is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andp

7.24. Size:1351K infineon
ipw60r060p7.pdf pdf_icon

IPW60R060P7MOSFETPG-TO 247-3600V CoolMOS P7 Power TransistorThe CoolMOS 7th generation platform is a revolutionary technology forhigh voltage power MOSFETs, designed according to the superjunction(SJ) principle and pioneered by Infineon Technologies. The 600VCoolMOS P7 series is the successor to the CoolMOS P6 series. Itcombines the benefits of a fast switching SJ MOS

7.25. Size:1025K infineon
ipw60r024cfd7.pdf pdf_icon

IPW60R024CFD7MOSFETPG-TO 247-3600V CoolMOS CFD7 Power TransistorCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies. The latest CoolMOS CFD7 is thesuccessor to the CoolMOS CFD2 series and is an optimized platformtailored to target soft switching applications s

7.26. Size:239K inchange semiconductor
ipw60r070c6.pdf pdf_icon

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IPW60R070C6IIPW60R070C6FEATURESStatic drain-source on-resistance:RDS(on)70mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Sou

7.27. Size:243K inchange semiconductor
ipw60r099p6.pdf pdf_icon

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IPW60R099P6IIPW60R099P6FEATURESStatic drain-source on-resistance:RDS(on)99mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Sou

7.28. Size:242K inchange semiconductor
ipw60r075cp.pdf pdf_icon

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IPW60R075CPIIPW60R075CPFEATURESStatic drain-source on-resistance:RDS(on)75mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Sou

7.29. Size:243K inchange semiconductor
ipw60r099cp.pdf pdf_icon

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IPW60R099CPIIPW60R099CPFEATURESStatic drain-source on-resistance:RDS(on)99mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh Peak Current CapabilityABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNI

7.30. Size:243K inchange semiconductor
ipw60r041p6.pdf pdf_icon

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IPW60R041P6IIPW60R041P6FEATURESStatic drain-source on-resistance:RDS(on)41mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Sou

7.31. Size:224K inchange semiconductor
ipw60r045cp.pdf pdf_icon

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IPW60R045CP IIPW60R045CPFEATURESStatic drain-source on-resistance:RDS(on)45mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh peak current capabilityABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNIT

7.32. Size:242K inchange semiconductor
ipw60r041c6.pdf pdf_icon

isc N-Channel MOSFET Transistor IPW60R041C6 IIPW60R041C6FEATURESStatic drain-source on-resistance:RDS(on)41mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast SwitchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 600 VDSSV

7.33. Size:248K inchange semiconductor
ipw60r070p6.pdf pdf_icon

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IPW60R070P6IIPW60R070P6FEATURESStatic drain-source on-resistance:RDS(on)70mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Sou

7.34. Size:242K inchange semiconductor
ipw60r099p7.pdf pdf_icon

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IPW60R099P7IIPW60R099P7FEATURESStatic drain-source on-resistance:RDS(on)99mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast SwitchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Sou

7.35. Size:242K inchange semiconductor
ipw60r040c7.pdf pdf_icon

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IPW60R040C7IIPW60R040C7FEATURESStatic drain-source on-resistance:RDS(on)40mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSuitable for hard and soft switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER V

7.36. Size:243K inchange semiconductor
ipw60r099c7.pdf pdf_icon

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IPW60R099C7IIPW60R099C7FEATURESStatic drain-source on-resistance:RDS(on)99mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSuitable for hard and soft switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER V

7.37. Size:243K inchange semiconductor
ipw60r070cfd7.pdf pdf_icon

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IPW60R070CFD7IIPW60R070CFD7FEATURESStatic drain-source on-resistance:RDS(on)70mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain

7.38. Size:243K inchange semiconductor
ipw60r060c7.pdf pdf_icon

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IPW60R060C7IIPW60R060C7FEATURESStatic drain-source on-resistance:RDS(on)60mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSuitable for hard and soft switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER V

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