IPW60R099P7 Specs and Replacement
Type Designator: IPW60R099P7
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 117 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 31 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 15 nS
Cossⓘ - Output Capacitance: 33 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.099 Ohm
Package: TO247
IPW60R099P7 substitution
- MOSFET ⓘ Cross-Reference Search
IPW60R099P7 datasheet
ipw60r099p7.pdf
IPW60R099P7 MOSFET PG-TO 247-3 600V CoolMOS P7 Power Transistor The CoolMOS 7th generation platform is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The 600V CoolMOS P7 series is the successor to the CoolMOS P6 series. It combines the benefits of a fast switching SJ MOS... See More ⇒
ipw60r099p7.pdf
INCHANGE Semiconductor isc N-Channel MOSFET Transistor IPW60R099P7 IIPW60R099P7 FEATURES Static drain-source on-resistance RDS(on) 99m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast Switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Sou... See More ⇒
ipa60r099p6 ipp60r099p6 ipw60r099p6 ipw60r099p6 ipp60r099p6 ipa60r099p6.pdf
MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS P6 600V CoolMOS P6 Power Transistor IPx60R099P6 Data Sheet Rev. 2.1 Final Power Management & Multimarket 600V CoolMOS P6 Power Transistor IPW60R099P6, IPP60R099P6, IPA60R099P6 TO-247 TO-220 TO-220 FP 1 Description tab CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed accordi... See More ⇒
ipw60r099p6.pdf
INCHANGE Semiconductor isc N-Channel MOSFET Transistor IPW60R099P6 IIPW60R099P6 FEATURES Static drain-source on-resistance RDS(on) 99m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Sou... See More ⇒
Detailed specifications: IPP12CN10N , IPP180N10N3 , IPP26CN10N , IPP35CN10N , IPP80CN10N , IPW60R060C7 , IPW60R070CFD7 , IPW60R080P7 , K2611 , IPW60R120C7 , IPW60R170CFD7 , IRF200P223 , IRF250P225 , IRF60B217 , IRF630NSTRRPBF , IRFP4127 , IRFP4868 .
History: AP90N06P
Keywords - IPW60R099P7 MOSFET specs
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Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility
History: AP90N06P
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