IPW60R120C7 MOSFET. Datasheet pdf. Equivalent
Type Designator: IPW60R120C7
Marking Code: 60C7120
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 92 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 19 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 34 nC
trⓘ - Rise Time: 7 nS
Cossⓘ - Output Capacitance: 27 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.12 Ohm
Package: TO247
IPW60R120C7 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IPW60R120C7 Datasheet (PDF)
ipw60r120c7.pdf
MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C7600V CoolMOS C7 Power TransistorIPW60R120C7Data SheetRev. 2.0FinalPower Management & Multimarket600V CoolMOS C7 Power TransistorIPW60R120C7TO-2471 DescriptionCoolMOS C7 is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andp
ipw60r120c7.pdf
INCHANGE Semiconductorisc N-Channel MOSFET Transistor IPW60R120C7IIPW60R120C7FEATURESStatic drain-source on-resistance:RDS(on)120mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSuitable for hard and soft switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER
ipw60r120p7.pdf
IPW60R120P7MOSFETPG-TO 247-3600V CoolMOS P7 Power TransistorThe CoolMOS 7th generation platform is a revolutionary technology forhigh voltage power MOSFETs, designed according to the superjunction(SJ) principle and pioneered by Infineon Technologies. The 600VCoolMOS P7 series is the successor to the CoolMOS P6 series. Itcombines the benefits of a fast switching SJ MOS
ipw60r120p7.pdf
isc N-Channel MOSFET Transistor IPW60R120P7IIPW60R120P7FEATURESStatic drain-source on-resistance:RDS(on)120mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSuitable for hard and soft switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Sour
ipw60r125cfd7.pdf
IPW60R125CFD7MOSFETPG-TO 247-3600V CoolMOS CFD7 Power TransistorCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies. The latest CoolMOS CFD7 is thesuccessor to the CoolMOS CFD2 series and is an optimized platformtailored to target soft switching applications s
ipa60r125p6 ipp60r125p6 ipw60r125p6.pdf
MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS P6600V CoolMOS P6 Power TransistorIPx60R125P6Data SheetRev. 2.0FinalPower Management & Multimarket600V CoolMOS P6 Power TransistorIPW60R125P6, IPP60R125P6, IPA60R125P6TO-247 TO-220 TO-220 FP1 DescriptiontabCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed accordi
ipa60r125c6 ipb60r125c6 ipp60r125c6 ipw60r125c6.pdf
MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C6 600V600V CoolMOS C6 Power TransistorIPx60R125C6Data SheetRev. 2.3FinalPower Management & Multimarket600V CIMOS C6 Pwer Transistr IPA60R125C6, IPB60R125C6IPP60R125C6 IPW60R125C61 DescriptinCoolMOS is a revolutionary technology for high voltage powerMOSFETs designed according to the superj
ipw60r125p6 ipp60r125p6 ipa60r125p6.pdf
MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS P6600V CoolMOS P6 Power TransistorIPx60R125P6Data SheetRev. 2.0FinalPower Management & Multimarket600V CoolMOS P6 Power TransistorIPW60R125P6, IPP60R125P6, IPA60R125P6TO-247 TO-220 TO-220 FP1 DescriptiontabCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed accordi
ipw60r125cp.pdf
IPW60R125CPCIMOS #:A0:9 688DG9>CC6CIPGTO247 1 ::7!"% # 4= =;0.4,77C /0=4290/ 1:I8
ipw60r125p6.pdf
INCHANGE Semiconductorisc N-Channel MOSFET Transistor IPW60R125P6IIPW60R125P6FEATURESStatic drain-source on-resistance:RDS(on)125mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-So
ipw60r125c6.pdf
INCHANGE Semiconductorisc N-Channel MOSFET Transistor IPW60R125C6IIPW60R125C6FEATURESStatic drain-source on-resistance:RDS(on)125mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-So
ipw60r125cp.pdf
isc N-Channel MOSFET Transistor IPW60R125CPIIPW60R125CPFEATURESStatic drain-source on-resistance:RDS(on)125mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh peak current capabilityABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Volta
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: PJP6NA90
History: PJP6NA90
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