TK17A65W MOSFET Datasheet: N-Ch, 650V, 17.3A. Full specification with pinout and replacement list

TK17A65W Specs and Replacement

Type Designator: TK17A65W

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 45 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 17.3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 15 nS

Cossⓘ - Output Capacitance: 40 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.2 Ohm

Package: TO-220F

TK17A65W substitution

- MOSFET ⓘ Cross-Reference Search

TK17A65W datasheet

..1. Size:237K toshiba
tk17a65w.pdf pdf_icon

TK17A65W MOSFETs Silicon N-Channel MOS (DTMOS ) TK17A65W TK17A65W TK17A65W TK17A65W 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 0.17 (typ.) by used to Super Junction Structure DTMOS (2) Easy to control Gate switching (3) En... See More ⇒

..2. Size:253K inchange semiconductor
tk17a65w.pdf pdf_icon

INCHANGE Semiconductor iscN-Channel MOSFET Transistor TK17A65W ITK17A65W FEATURES Low drain-source on-resistance RDS(ON) = 0.2 Enhancement mode Vth = 2.5 to 3.5V (VDS = 10 V, ID=0.9mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXIMUM RATINGS(T =25 )... See More ⇒

0.1. Size:236K toshiba
tk17a65w5.pdf pdf_icon

TK17A65W5 MOSFETs Silicon N-Channel MOS (DTMOS ) TK17A65W5 TK17A65W5 TK17A65W5 TK17A65W5 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Fast reverse recovery time trr = 110 ns (typ.) (2) Low drain-source on-resistance RDS(ON) = 0.19 (typ.) by used to Super Junction Str... See More ⇒

0.2. Size:253K inchange semiconductor
tk17a65w5.pdf pdf_icon

INCHANGE Semiconductor iscN-Channel MOSFET Transistor TK17A65W5 ITK17A65W5 FEATURES Low drain-source on-resistance RDS(ON) = 0.19 (typ.) Enhancement mode Vth = 3.0 to 4.5V (VDS = 10 V, ID=0.9mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXIMUM RATINGS... See More ⇒