All MOSFET. TK17A65W Datasheet

 

TK17A65W Datasheet and Replacement


   Type Designator: TK17A65W
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 45 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.5 V
   |Id| ⓘ - Maximum Drain Current: 17.3 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 45 nC
   tr ⓘ - Rise Time: 15 nS
   Cossⓘ - Output Capacitance: 40 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.2 Ohm
   Package: TO-220F
 

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TK17A65W Datasheet (PDF)

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TK17A65W

TK17A65WMOSFETs Silicon N-Channel MOS (DTMOS)TK17A65WTK17A65WTK17A65WTK17A65W1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.17 (typ.) by used to Super Junction Structure : DTMOS(2) Easy to control Gate switching(3) En

 ..2. Size:253K  inchange semiconductor
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TK17A65W

INCHANGE SemiconductoriscN-Channel MOSFET Transistor TK17A65WITK17A65WFEATURESLow drain-source on-resistance: RDS(ON) = 0.2Enhancement mode: Vth = 2.5 to 3.5V (VDS = 10 V, ID=0.9mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T =25)

 0.1. Size:236K  toshiba
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TK17A65W

TK17A65W5MOSFETs Silicon N-Channel MOS (DTMOS)TK17A65W5TK17A65W5TK17A65W5TK17A65W51. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Fast reverse recovery time: trr = 110 ns (typ.)(2) Low drain-source on-resistance: RDS(ON) = 0.19 (typ.) by used to Super Junction Str

 0.2. Size:253K  inchange semiconductor
 tk17a65w5.pdf pdf_icon

TK17A65W

INCHANGE SemiconductoriscN-Channel MOSFET Transistor TK17A65W5ITK17A65W5FEATURESLow drain-source on-resistance: RDS(ON) = 0.19 (typ.)Enhancement mode: Vth = 3.0 to 4.5V (VDS = 10 V, ID=0.9mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS

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