TK17A65W - Даташиты. Аналоги. Основные параметры

TK17A65W MOSFETs Silicon N-Channel MOS (DTMOS ) TK17A65W TK17A65W TK17A65W TK17A65W 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 0.17 (typ.) by used to Super Junction Structure DTMOS (2) Easy to control Gate switching (3) En

INCHANGE Semiconductor iscN-Channel MOSFET Transistor TK17A65W ITK17A65W FEATURES Low drain-source on-resistance RDS(ON) = 0.2 Enhancement mode Vth = 2.5 to 3.5V (VDS = 10 V, ID=0.9mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXIMUM RATINGS(T =25 )

TK17A65W5 MOSFETs Silicon N-Channel MOS (DTMOS ) TK17A65W5 TK17A65W5 TK17A65W5 TK17A65W5 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Fast reverse recovery time trr = 110 ns (typ.) (2) Low drain-source on-resistance RDS(ON) = 0.19 (typ.) by used to Super Junction Str

INCHANGE Semiconductor iscN-Channel MOSFET Transistor TK17A65W5 ITK17A65W5 FEATURES Low drain-source on-resistance RDS(ON) = 0.19 (typ.) Enhancement mode Vth = 3.0 to 4.5V (VDS = 10 V, ID=0.9mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXIMUM RATINGS

TK17A65U MOSFETs Silicon N-Channel MOS (DTMOS ) TK17A65U TK17A65U TK17A65U TK17A65U 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 0.20 (typ.) (2) High forward transfer admittance Yfs = 12.0 S (typ.) (3) Low leakage current ID

INCHANGE Semiconductor iscN-Channel MOSFET Transistor TK17A65U ITK17A65U FEATURES Low drain-source on-resistance RDS(ON) = 0.20 (typ.) Low leakage current IDSS = 100 A (max) (VDS = 650 V) Enhancement mode Vth = 3.0 to 5.0V (VDS = 10 V, ID=1mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION S