TK19A50W Datasheet and Replacement
Type Designator: TK19A50W
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 40 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 18.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 25 nS
Cossⓘ - Output Capacitance: 35 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.19 Ohm
Package: TO-220F
TK19A50W substitution
TK19A50W Datasheet (PDF)
tk19a50w.pdf

TK19A50WMOSFETs Silicon N-Channel MOS (DTMOS)TK19A50WTK19A50WTK19A50WTK19A50W1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.16 (typ.) by used to Super Junction Structure : DTMOS(2) Easy to control Gate switching(3) En
tk19a50w.pdf

INCHANGE Semiconductorisc N-Channel MOSFET Transistor TK19A50W, ITK19A50WFEATURESLow drain-source on-resistance: RDS(ON) = 0.16 (typ.)Easy to control Gate switchingEnhancement mode: Vth = 2.7 to 3.7 V (VDS = 10 V, ID=0.79 mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage Reg
tk19a45d.pdf

TK19A45D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOS) TK19A45D Switching Regulator Applications Unit: mm2.7 0.2 10 0.3 3.2 0.2 A Low drain-source ON-resistance: RDS (ON) = 0.19 (typ.) High forward transfer admittance: Yfs = 10 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 450 V) Enhancement-mode:
Datasheet: TK10A80W , TK10E80W , TK12A50D5 , TK12A50W , TK12A80W , TK17A65W , TK17A65W5 , TK17E80W , 10N60 , TK22A65X5 , TK290A60Y , TK290A65Y , TK380A60Y , TK380A65Y , TK3A90E , TK3R1A04PL , TK3R3A06PL .
History: KTK211 | IRFP151FI | WFU2N65L
Keywords - TK19A50W MOSFET datasheet
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History: KTK211 | IRFP151FI | WFU2N65L



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