TK19A50W - аналоги, параметры транзистора - Справочник транзисторов

TK19A50W даташит

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TK19A50W MOSFETs Silicon N-Channel MOS (DTMOS ) TK19A50W TK19A50W TK19A50W TK19A50W 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 0.16 (typ.) by used to Super Junction Structure DTMOS (2) Easy to control Gate switching (3) En

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INCHANGE Semiconductor isc N-Channel MOSFET Transistor TK19A50W, ITK19A50W FEATURES Low drain-source on-resistance RDS(ON) = 0.16 (typ.) Easy to control Gate switching Enhancement mode Vth = 2.7 to 3.7 V (VDS = 10 V, ID=0.79 mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Reg

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TK19A45D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOS ) TK19A45D Switching Regulator Applications Unit mm 2.7 0.2 10 0.3 3.2 0.2 A Low drain-source ON-resistance RDS (ON) = 0.19 (typ.) High forward transfer admittance Yfs = 10 S (typ.) Low leakage current IDSS = 10 A (max) (VDS = 450 V) Enhancement-mode

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