TK290A65Y MOSFET. Datasheet pdf. Equivalent
Type Designator: TK290A65Y
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 35 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 11.5 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 25 nC
trⓘ - Rise Time: 25 nS
Cossⓘ - Output Capacitance: 26 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.29 Ohm
Package: TO-220F
TK290A65Y Transistor Equivalent Substitute - MOSFET Cross-Reference Search
TK290A65Y Datasheet (PDF)
tk290a65y.pdf
TK290A65YMOSFETs Silicon N-Channel MOS (DTMOS)TK290A65YTK290A65YTK290A65YTK290A65Y1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.23 (typ.) by using Super Junction Structure : DTMOS(2) Easy to control Gate switching(3) E
tk290a65y.pdf
INCHANGE Semiconductorisc N-Channel MOSFET Transistor TK290A65YITK290A65YFEATURESLow drain-source on-resistance: RDS(ON) = 0.29Enhancement mode: Vth = 3 to 4V (VDS = 10 V, ID=0.45mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T =25
tk290a60y.pdf
TK290A60YMOSFETs Silicon N-Channel MOS (DTMOS)TK290A60YTK290A60YTK290A60YTK290A60Y1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.23 (typ.) by using Super Junction Structure : DTMOS(2) Easy to control Gate switching(3) E
tk290a60y.pdf
INCHANGE SemiconductorIsc N-Channel MOSFET Transistor TK290A60Y,ITK290A60YFEATURESLow drain-source on-resistance: RDS(ON) = 0.29 (typ.)Easy to control Gate switchingEnhancement mode: Vth = 3 to 4V (VDS = 10 V, ID=0.45mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage Regulato
tk290p65y.pdf
TK290P65YMOSFETs Silicon N-Channel MOS (DTMOS)TK290P65YTK290P65YTK290P65YTK290P65Y1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.23 (typ.) by using Super Junction Structure : DTMOS(2) Easy to control Gate switching(3) E
tk290p60y.pdf
TK290P60YMOSFETs Silicon N-Channel MOS (DTMOS)TK290P60YTK290P60YTK290P60YTK290P60Y1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.23 (typ.) by using Super Junction Structure : DTMOS(2) Easy to control Gate switching(3) E
tk2907attd03.pdf
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD WBFBP-03A Plastic-Encapsulate Transistors C TK2907ATTD03 TRANSISTOR WBFBP-03A (1.61.60.5) TOP unit: mm DESCRIPTION PNP Epitaxial planar type Silicon Transistor B E FEATURES 1. BASE C Complementary NPN Type available (TK2222ATTD03) 2. EMITTER 3. COLLECTOR BACK PPLICATION general purpose amplifier, swit
tk290p60y.pdf
INCHANGE SemiconductorIsc N-Channel MOSFET Transistor TK290P60YFEATURESWith To-252(DPAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE U
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
