TK290A65Y - Даташиты. Аналоги. Основные параметры

TK290A65YMOSFETs Silicon N-Channel MOS (DTMOS)TK290A65YTK290A65YTK290A65YTK290A65Y1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.23 (typ.) by using Super Junction Structure : DTMOS(2) Easy to control Gate switching(3) E

INCHANGE Semiconductorisc N-Channel MOSFET Transistor TK290A65YITK290A65YFEATURESLow drain-source on-resistance: RDS(ON) = 0.29Enhancement mode: Vth = 3 to 4V (VDS = 10 V, ID=0.45mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T =25

TK290A60YMOSFETs Silicon N-Channel MOS (DTMOS)TK290A60YTK290A60YTK290A60YTK290A60Y1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.23 (typ.) by using Super Junction Structure : DTMOS(2) Easy to control Gate switching(3) E

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor TK290A60Y,ITK290A60YFEATURESLow drain-source on-resistance: RDS(ON) = 0.29 (typ.)Easy to control Gate switchingEnhancement mode: Vth = 3 to 4V (VDS = 10 V, ID=0.45mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage Regulato

TK290P65YMOSFETs Silicon N-Channel MOS (DTMOS)TK290P65YTK290P65YTK290P65YTK290P65Y1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.23 (typ.) by using Super Junction Structure : DTMOS(2) Easy to control Gate switching(3) E

TK290P60YMOSFETs Silicon N-Channel MOS (DTMOS)TK290P60YTK290P60YTK290P60YTK290P60Y1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.23 (typ.) by using Super Junction Structure : DTMOS(2) Easy to control Gate switching(3) E

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD WBFBP-03A Plastic-Encapsulate Transistors C TK2907ATTD03 TRANSISTOR WBFBP-03A (1.61.60.5) TOP unit: mm DESCRIPTION PNP Epitaxial planar type Silicon Transistor B E FEATURES 1. BASE C Complementary NPN Type available (TK2222ATTD03) 2. EMITTER 3. COLLECTOR BACK PPLICATION general purpose amplifier, swit

60V, 30A, 28m N-channel Power Trench MOSFETJMTK290N06AProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParameters Value Unit 100% UIS TESTEDVDSS 60 V 100% Vds TESTEDVGS(th)_Typ 1.6 V Halogen-free; RoHS-compliantID(@VGS=10V) 30 ARDS(ON)_Typ(@VGS=10V 25 mW Pb-free platingRDS(ON)_Typ(@VGS=4.5V 28 mWApplications Load Switch PWM

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor TK290P60YFEATURESWith To-252(DPAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE U