TK380A65Y MOSFET. Datasheet pdf. Equivalent
Type Designator: TK380A65Y
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 30 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 9.7 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 20 nC
trⓘ - Rise Time: 23 nS
Cossⓘ - Output Capacitance: 23 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.38 Ohm
Package: TO-220F
TK380A65Y Transistor Equivalent Substitute - MOSFET Cross-Reference Search
TK380A65Y Datasheet (PDF)
tk380a65y.pdf
TK380A65YMOSFETs Silicon N-Channel MOS (DTMOS)TK380A65YTK380A65YTK380A65YTK380A65Y1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.29 (typ.)by using Super Junction Structure : DTMOS(2) Easy to control Gate switching(3)
tk380a65y.pdf
INCHANGE Semiconductorisc N-Channel MOSFET Transistor TK380A65YITK380A65YFEATURESLow drain-source on-resistance: RDS(ON) = 0.38Enhancement mode: Vth = 3 to 4V (VDS = 10 V, ID=0.36mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T =25
tk380a60y.pdf
TK380A60YMOSFETs Silicon N-Channel MOS (DTMOS)TK380A60YTK380A60YTK380A60YTK380A60Y1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.29 (typ.) by using Super Junction Structure : DTMOS(2) Easy to control Gate switching(3) E
tk380a60y.pdf
INCHANGE SemiconductorIsc N-Channel MOSFET Transistor TK380A60YITK380A60YFEATURESLow drain-source on-resistance: RDS(ON) = 0.38 (typ.)by using Super Junction Structure : DTMOSEasy to control Gate switchingEnhancement mode: Vth = 3 to 4V (VDS = 10 V, ID=0.36mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable oper
tk380p60y.pdf
TK380P60YMOSFETs Silicon N-Channel MOS (DTMOS)TK380P60YTK380P60YTK380P60YTK380P60Y1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.29 (typ.) by using Super Junction Structure : DTMOS(2) Easy to control Gate switching(3) E
tk380p65y.pdf
TK380P65YMOSFETs Silicon N-Channel MOS (DTMOS)TK380P65YTK380P65YTK380P65YTK380P65Y1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.29 (typ.) by using Super Junction Structure : DTMOS(2) Easy to control Gate switching(3) E
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