TK380A65Y MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: TK380A65Y
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 30 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 650 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 9.7 A
Tjⓘ - Максимальная температура канала: 150 °C
Qgⓘ - Общий заряд затвора: 20 nC
trⓘ - Время нарастания: 23 ns
Cossⓘ - Выходная емкость: 23 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.38 Ohm
Тип корпуса: TO-220F
TK380A65Y Datasheet (PDF)
tk380a65y.pdf
TK380A65YMOSFETs Silicon N-Channel MOS (DTMOS)TK380A65YTK380A65YTK380A65YTK380A65Y1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.29 (typ.)by using Super Junction Structure : DTMOS(2) Easy to control Gate switching(3)
tk380a65y.pdf
INCHANGE Semiconductorisc N-Channel MOSFET Transistor TK380A65YITK380A65YFEATURESLow drain-source on-resistance: RDS(ON) = 0.38Enhancement mode: Vth = 3 to 4V (VDS = 10 V, ID=0.36mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T =25
tk380a60y.pdf
TK380A60YMOSFETs Silicon N-Channel MOS (DTMOS)TK380A60YTK380A60YTK380A60YTK380A60Y1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.29 (typ.) by using Super Junction Structure : DTMOS(2) Easy to control Gate switching(3) E
tk380a60y.pdf
INCHANGE SemiconductorIsc N-Channel MOSFET Transistor TK380A60YITK380A60YFEATURESLow drain-source on-resistance: RDS(ON) = 0.38 (typ.)by using Super Junction Structure : DTMOSEasy to control Gate switchingEnhancement mode: Vth = 3 to 4V (VDS = 10 V, ID=0.36mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable oper
tk380p60y.pdf
TK380P60YMOSFETs Silicon N-Channel MOS (DTMOS)TK380P60YTK380P60YTK380P60YTK380P60Y1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.29 (typ.) by using Super Junction Structure : DTMOS(2) Easy to control Gate switching(3) E
tk380p65y.pdf
TK380P65YMOSFETs Silicon N-Channel MOS (DTMOS)TK380P65YTK380P65YTK380P65YTK380P65Y1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.29 (typ.) by using Super Junction Structure : DTMOS(2) Easy to control Gate switching(3) E
Другие MOSFET... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
Список транзисторов
Обновления
MOSFET: QM1830M3 | SUN830I | SUN830F | SUN830DN | SUN830D | SUN82A20CI | SUN50A20CI | SUN09A40D | SUN05A50ZF | SUN05A50ZD | SUN05A25F | SRN1865FD | SRN1860FD | SRN1860F | SRN1665FD | SRN1660FD