TK4A80E Specs and Replacement
Type Designator: TK4A80E
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 35 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 4 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 25 nS
Cossⓘ - Output Capacitance: 55 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 3.5 Ohm
Package: TO-220F
TK4A80E substitution
- MOSFET ⓘ Cross-Reference Search
TK4A80E datasheet
tk4a80e.pdf
TK4A80E MOSFETs Silicon N-Channel MOS ( -MOS ) TK4A80E TK4A80E TK4A80E TK4A80E 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 2.8 (typ.) (2) Low leakage current IDSS = 10 A (max) (VDS = 640 V) (3) Enhancement mode Vth = 2.... See More ⇒
Detailed specifications: TK290A60Y, TK290A65Y, TK380A60Y, TK380A65Y, TK3A90E, TK3R1A04PL, TK3R3A06PL, TK3R3E03GL, 7N65, TK4R3A06PL, TK4R3E06PL, TK560A60Y, TK560A65Y, TK5A90E, TK5R1E06PL, TK5R3A06PL, TK7E80W
Keywords - TK4A80E MOSFET specs
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