TK5R3A06PL Specs and Replacement
Type Designator: TK5R3A06PL
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 36 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 56 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 6 nS
Cossⓘ - Output Capacitance: 470 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0053 Ohm
Package: TO-220F
TK5R3A06PL substitution
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TK5R3A06PL datasheet
tk5r3a06pl.pdf
INCHANGE Semiconductor iscN-Channel MOSFET Transistor TK5R3A06PL ITK5R3A06PL FEATURES Low drain-source on-resistance RDS(ON) = 4.1m (typ.) (VGS = 10 V) Enhancement mode Vth = 1.5 to 2.5V (VDS = 10 V, ID=0.3mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOL... See More ⇒
Detailed specifications: TK3R3E03GL, TK4A80E, TK4R3A06PL, TK4R3E06PL, TK560A60Y, TK560A65Y, TK5A90E, TK5R1E06PL, 2N7002, TK7E80W, TK8R2A06PL, TK8R2E06PL, FS5KM-10A, HY3810P, HY3810M, HY3810B, HY3810PS
Keywords - TK5R3A06PL MOSFET specs
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
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