All MOSFET. TK5R3A06PL Datasheet

 

TK5R3A06PL Datasheet and Replacement


   Type Designator: TK5R3A06PL
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 36 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 56 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 6 nS
   Cossⓘ - Output Capacitance: 470 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0053 Ohm
   Package: TO-220F
 

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TK5R3A06PL Datasheet (PDF)

 ..1. Size:581K  toshiba
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TK5R3A06PL

TK5R3A06PLMOSFET NMOS (U-MOS-H)TK5R3A06PLTK5R3A06PLTK5R3A06PLTK5R3A06PL1. 1. 1. 1. DC-DC 2. 2. 2. 2. (1) (2)

 ..2. Size:253K  inchange semiconductor
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TK5R3A06PL

INCHANGE SemiconductoriscN-Channel MOSFET Transistor TK5R3A06PLITK5R3A06PLFEATURESLow drain-source on-resistance:RDS(ON) = 4.1m (typ.) (VGS = 10 V)Enhancement mode:Vth = 1.5 to 2.5V (VDS = 10 V, ID=0.3mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOL

Datasheet: TK3R3E03GL , TK4A80E , TK4R3A06PL , TK4R3E06PL , TK560A60Y , TK560A65Y , TK5A90E , TK5R1E06PL , 2N7002 , TK7E80W , TK8R2A06PL , TK8R2E06PL , FS5KM-10A , HY3810P , HY3810M , HY3810B , HY3810PS .

History: TK7E80W

Keywords - TK5R3A06PL MOSFET datasheet

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