HY3810PS Specs and Replacement
Type Designator: HY3810PS
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 346 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id| ⓘ - Maximum Drain Current: 180 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 45 nS
Cossⓘ - Output Capacitance: 1013 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0065 Ohm
Package: TO-3PS
HY3810PS substitution
- MOSFET ⓘ Cross-Reference Search
HY3810PS datasheet
hy3810p hy3810m hy3810b hy3810ps hy3810pm.pdf
HY3810P/M/B/PS/PM N-Channel Enhancement Mode MOSFET Pin Description F eatures 100V/180A RDS(ON)= 5.0 m (typ.) @ VGS=10V S D G S D 100% avalanche tested G S D G Reliable and Rugged TO-220FB-3L TO-220FB-3S TO-263-2L Lead Free and Green Devices Available (RoHS Compliant) S D G S D G pplications A TO-3PS-3L TO-3PM-3S Switching application ... See More ⇒
hy3810.pdf
HY3810P/M/B/PS/PM N-Channel Enhancement Mode MOSFET Pin Description F eatures 100V/180A RDS(ON)= 5.0 m (typ.) @ VGS=10V S D G S D 100% avalanche tested G S D G Reliable and Rugged TO-220FB-3L TO-220FB-3S TO-263-2L Lead Free and Green Devices Available (RoHS Compliant) S D G S D G pplications A TO-3PS-3L TO-3PM-3S Switching application ... See More ⇒
Detailed specifications: TK5R3A06PL, TK7E80W, TK8R2A06PL, TK8R2E06PL, FS5KM-10A, HY3810P, HY3810M, HY3810B, SPP20N60C3, HY3810PM, HY3906P, HY3906B, HYG067N07NQ1P, HYG067N07NQ1B, HYG067N07NQ1PS, IPP07N03L, IPB07N03L
Keywords - HY3810PS MOSFET specs
HY3810PS cross reference
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
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