All MOSFET. HY3810PS Datasheet

 

HY3810PS Datasheet and Replacement


   Type Designator: HY3810PS
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 346 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id|ⓘ - Maximum Drain Current: 180 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 45 nS
   Cossⓘ - Output Capacitance: 1013 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0065 Ohm
   Package: TO-3PS
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HY3810PS Datasheet (PDF)

 ..1. Size:971K  hymexa
hy3810p hy3810m hy3810b hy3810ps hy3810pm.pdf pdf_icon

HY3810PS

HY3810P/M/B/PS/PMN-Channel Enhancement Mode MOSFETPin DescriptionFeatures 100V/180ARDS(ON)= 5.0 m(typ.) @ VGS=10VSDGSD 100% avalanche tested GSDG Reliable and RuggedTO-220FB-3L TO-220FB-3S TO-263-2L Lead Free and Green Devices Available(RoHS Compliant)SDGSDGpplicationsA TO-3PS-3L TO-3PM-3SSwitching application

 8.1. Size:971K  hymexa
hy3810.pdf pdf_icon

HY3810PS

HY3810P/M/B/PS/PMN-Channel Enhancement Mode MOSFETPin DescriptionFeatures 100V/180ARDS(ON)= 5.0 m(typ.) @ VGS=10VSDGSD 100% avalanche tested GSDG Reliable and RuggedTO-220FB-3L TO-220FB-3S TO-263-2L Lead Free and Green Devices Available(RoHS Compliant)SDGSDGpplicationsA TO-3PS-3L TO-3PM-3SSwitching application

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: TSM2NB60CI | HLML6401 | IRL541 | QM3010G | IRF7450 | SFG10R20PF | AP85T03GH-HF

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