HY3810PS Datasheet and Replacement
Type Designator: HY3810PS
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 346 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id|ⓘ - Maximum Drain Current: 180 A
Tjⓘ - Maximum Junction Temperature: 175 °C
trⓘ - Rise Time: 45 nS
Cossⓘ - Output Capacitance: 1013 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0065 Ohm
Package: TO-3PS
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HY3810PS Datasheet (PDF)
hy3810p hy3810m hy3810b hy3810ps hy3810pm.pdf

HY3810P/M/B/PS/PMN-Channel Enhancement Mode MOSFETPin DescriptionFeatures 100V/180ARDS(ON)= 5.0 m(typ.) @ VGS=10VSDGSD 100% avalanche tested GSDG Reliable and RuggedTO-220FB-3L TO-220FB-3S TO-263-2L Lead Free and Green Devices Available(RoHS Compliant)SDGSDGpplicationsA TO-3PS-3L TO-3PM-3SSwitching application
hy3810.pdf

HY3810P/M/B/PS/PMN-Channel Enhancement Mode MOSFETPin DescriptionFeatures 100V/180ARDS(ON)= 5.0 m(typ.) @ VGS=10VSDGSD 100% avalanche tested GSDG Reliable and RuggedTO-220FB-3L TO-220FB-3S TO-263-2L Lead Free and Green Devices Available(RoHS Compliant)SDGSDGpplicationsA TO-3PS-3L TO-3PM-3SSwitching application
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: TSM2NB60CI | HLML6401 | IRL541 | QM3010G | IRF7450 | SFG10R20PF | AP85T03GH-HF
Keywords - HY3810PS MOSFET datasheet
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History: TSM2NB60CI | HLML6401 | IRL541 | QM3010G | IRF7450 | SFG10R20PF | AP85T03GH-HF



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