SVF4N65T PDF and Equivalents Search

 

SVF4N65T Specs and Replacement

Type Designator: SVF4N65T

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 100 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 37.33 nS

Cossⓘ - Output Capacitance: 54 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.7 Ohm

Package: TO-220

SVF4N65T substitution

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SVF4N65T datasheet

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SVF4N65T

SVF4N65T/F/M/MJ/D/K 4A 650V N 2 SVF4N65T/F/M/MJ/D/K N MOS 1 2 3 F-CellTM VDMOS TO-251J-3L 1 3 ... See More ⇒

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Detailed specifications: HY3906P, HY3906B, HYG067N07NQ1P, HYG067N07NQ1B, HYG067N07NQ1PS, IPP07N03L, IPB07N03L, IPW60R060P7, IRF530, SVF4N65F, SVF4N65FG, SVF4N65M, VP0300M, CEPF630, CEBF630, CS64N12, CSN64N12

Keywords - SVF4N65T MOSFET specs

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