All MOSFET. SVF4N65T Datasheet

 

SVF4N65T Datasheet and Replacement


   Type Designator: SVF4N65T
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 100 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 4 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 8.03 nC
   trⓘ - Rise Time: 37.33 nS
   Cossⓘ - Output Capacitance: 54 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 2.7 Ohm
   Package: TO-220
      - MOSFET Cross-Reference Search

 

SVF4N65T Datasheet (PDF)

 ..1. Size:427K  silan
 svf4n65t svf4n65f svf4n65mj svf4n65m svf4n65m svf4n65d svf4n65dtr svf4n65k.pdf pdf_icon

SVF4N65T

SVF4N65T/F/M/MJ/D/K 4A650V N SVF4N65T/F/M/MJ/D/K N MOS F-CellTM VDMOS

 ..2. Size:620K  silan
 svf4n65t svf4n65f svf4n65m svf4n65mj svf4n65d svf4n65k.pdf pdf_icon

SVF4N65T

SVF4N65T/F/M/MJ/D/K 4A650V N 2SVF4N65T/F/M/MJ/D/K N MOS 123 F-CellTM VDMOS TO-251J-3L13

 7.1. Size:449K  silan
 svf4n65f svf4n65mj svf4n65m svf4n65dtr.pdf pdf_icon

SVF4N65T

SVF4N65F/M/MJ/D 4A650V N 2SVF4N65F/M/MJ/D N MOS F-CellTM VDMOS 1 31. 2.

 7.2. Size:697K  silan
 svf4n65f svf4n65m svf4n65mj svf4n65d.pdf pdf_icon

SVF4N65T

SVF4N65F/M/MJ/D 4A650V N SVF4N65F/M/MJ/D N MOS F-CellTM VDMOS AC-DC

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History: IRLU8721PBF | HUFA75321D3S | IRF6644 | IXTH21N50 | 2SJ668

Keywords - SVF4N65T MOSFET datasheet

 SVF4N65T cross reference
 SVF4N65T equivalent finder
 SVF4N65T lookup
 SVF4N65T substitution
 SVF4N65T replacement

 

 
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