CEPF630 MOSFET Datasheet: N-Ch, 200V, 10A. Full specification with pinout and replacement list

CEPF630 Specs and Replacement

   Type Designator: CEPF630
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 75 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 10 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

   tr ⓘ - Rise Time: 80 nS
   Cossⓘ - Output Capacitance: 105 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.4 Ohm
   Package: TO-220

CEPF630 substitution

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CEPF630 datasheet

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CEPF634/CEBF634 CEIF634/CEFF634 N-Channel Enhancement Mode Field Effect Transistor FEATURES Type VDSS RDS(ON) ID @VGS CEPF634 250V 0.45 8.1A 10V CEBF634 250V 0.45 8.1A 10V CEIF634 250V 0.45 8.1A 10V CEFF634 250V 0.45 8.1A d 10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220 & TO-... See More ⇒

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CEPF640/CEBF640 CEFF640 N-Channel Enhancement Mode Field Effect Transistor FEATURES Type VDSS RDS(ON) ID @VGS CEPF640 200V 0.15 19A 10V CEBF640 200V 0.15 19A 10V CEFF640 200V 0.15 19A d 10V Super high dense cell design for extremely low RDS(ON). D High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 & TO-220F full-pak for through hole. ... See More ⇒

Detailed specifications: IPP07N03L , IPB07N03L , IPW60R060P7 , SVF4N65T , SVF4N65F , SVF4N65FG , SVF4N65M , VP0300M , IRFP450 , CEBF630 , CS64N12 , CSN64N12 , D7509 , FD7509 , ID7509 , ED7509 , DFF2N60 .