SUB60N06-18 MOSFET Datasheet: N-Ch, 60V, 60A. Full specification with pinout and replacement list

SUB60N06-18 Specs and Replacement

Type Designator: SUB60N06-18

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 150 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 60 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 30 nS

Cossⓘ - Output Capacitance: 400 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.018 Ohm

Package: TO-263

SUB60N06-18 substitution

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SUB60N06-18 datasheet

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SUP/SUB60N06-18 Vishay Siliconix N-Channel 60-V (D-S), 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A) 60 0.018 60 TO-220AB D TO-263 DRAIN connected to TAB G G D S G D S Top View Top View S SUB60N06-18 SUP60N06-18 N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Unit Drain-Source Voltage VDS 60 V V Gate-Sourc... See More ⇒

Detailed specifications: FD7509, ID7509, ED7509, DFF2N60, NCE60H10F, STK0760P, TPC8228H, SUP60N06-18, 18N50, BLV108, BLV1N60, BLV1N60A, BLV2N60, BLV4N60, BLV640, BLV6N60, BLV730