All MOSFET. SUB60N06-18 Datasheet

 

SUB60N06-18 Datasheet and Replacement


   Type Designator: SUB60N06-18
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 150 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 60 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 30 nS
   Cossⓘ - Output Capacitance: 400 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.018 Ohm
   Package: TO-263
 

 SUB60N06-18 substitution

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SUB60N06-18 Datasheet (PDF)

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SUB60N06-18

SUP/SUB60N06-18Vishay SiliconixN-Channel 60-V (D-S), 175_C MOSFETPRODUCT SUMMARYV(BR)DSS (V) rDS(on) (W) ID (A)60 0.018 60TO-220ABDTO-263DRAIN connected to TAB GG D SG D STop ViewTop ViewSSUB60N06-18SUP60N06-18N-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED)Parameter Symbol Limit UnitDrain-Source Voltage VDS 60VVGate-Sourc

Datasheet: FD7509 , ID7509 , ED7509 , DFF2N60 , NCE60H10F , STK0760P , TPC8228H , SUP60N06-18 , 75N75 , BLV108 , BLV1N60 , BLV1N60A , BLV2N60 , BLV4N60 , BLV640 , BLV6N60 , BLV730 .

History: SWI8N65D | FHD80N07C | SML1004R2KN | AP94T07GMT-HF | DL2M50N5 | AON5810 | 2SK629

Keywords - SUB60N06-18 MOSFET datasheet

 SUB60N06-18 cross reference
 SUB60N06-18 equivalent finder
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