All MOSFET. SUB60N06-18 Datasheet

 

SUB60N06-18 MOSFET. Datasheet pdf. Equivalent


   Type Designator: SUB60N06-18
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 150 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 60 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 39 nC
   trⓘ - Rise Time: 30 nS
   Cossⓘ - Output Capacitance: 400 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.018 Ohm
   Package: TO-263

 SUB60N06-18 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SUB60N06-18 Datasheet (PDF)

 ..1. Size:100K  vishay
 sup60n06-18 sub60n06-18.pdf

SUB60N06-18 SUB60N06-18

SUP/SUB60N06-18Vishay SiliconixN-Channel 60-V (D-S), 175_C MOSFETPRODUCT SUMMARYV(BR)DSS (V) rDS(on) (W) ID (A)60 0.018 60TO-220ABDTO-263DRAIN connected to TAB GG D SG D STop ViewTop ViewSSUB60N06-18SUP60N06-18N-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED)Parameter Symbol Limit UnitDrain-Source Voltage VDS 60VVGate-Sourc

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