BLV1N60 MOSFET Datasheet: N-Ch, 600V, 1A. Full specification with pinout and replacement list

BLV1N60 Specs and Replacement

Type Designator: BLV1N60

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 28 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 1 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 60 nS

Cossⓘ - Output Capacitance: 28 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 8 Ohm

Package: TO-252

BLV1N60 substitution

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BLV1N60 datasheet

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BLV1N60 N-channel Enhancement Mode Power MOSFET 600V DSS Avalanche Energy Specified BV Fast Switching RDS(ON) 8 Simple Drive Requirements ID 1A Description This advanced high voltage MOSFET is produced using Belling s proprietary DMOS technology. Designed for high efficiency switch mode power supply. Absolute Maximum Ratings ( TC=25oC unless o... See More ⇒

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blv1n60a.pdf pdf_icon

BLV1N60A N-channel Enhancement Mode Power MOSFET 600V DSS Avalanche Energy Specified BV Fast Switching RDS(ON) 15 Simple Drive Requirements ID 0.5A Description This advanced high voltage MOSFET is produced using Belling s proprietary DMOS technology. Designed for high efficiency switch mode power supply. Absolute Maximum Ratings ( TC=25oC unle... See More ⇒

Detailed specifications: ED7509, DFF2N60, NCE60H10F, STK0760P, TPC8228H, SUP60N06-18, SUB60N06-18, BLV108, IRF520, BLV1N60A, BLV2N60, BLV4N60, BLV640, BLV6N60, BLV730, BLV740, BLV7N60