All MOSFET. BLV1N60 Datasheet

 

BLV1N60 Datasheet and Replacement


   Type Designator: BLV1N60
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 28 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 1 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 60 nS
   Cossⓘ - Output Capacitance: 28 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 8 Ohm
   Package: TO-252
 

 BLV1N60 substitution

   - MOSFET ⓘ Cross-Reference Search

 

BLV1N60 Datasheet (PDF)

 ..1. Size:480K  belling
 blv1n60.pdf pdf_icon

BLV1N60

BLV1N60 N-channel Enhancement Mode Power MOSFET 600V DSS Avalanche Energy Specified BV Fast Switching RDS(ON) 8 Simple Drive Requirements ID 1ADescription This advanced high voltage MOSFET is produced using Bellings proprietary DMOS technology. Designed for high efficiency switch mode power supply. Absolute Maximum Ratings ( TC=25oC unless o

 0.1. Size:476K  belling
 blv1n60a.pdf pdf_icon

BLV1N60

BLV1N60A N-channel Enhancement Mode Power MOSFET 600V DSS Avalanche Energy Specified BV Fast Switching RDS(ON) 15 Simple Drive Requirements ID 0.5ADescription This advanced high voltage MOSFET is produced using Bellings proprietary DMOS technology. Designed for high efficiency switch mode power supply. Absolute Maximum Ratings ( TC=25oC unle

Datasheet: ED7509 , DFF2N60 , NCE60H10F , STK0760P , TPC8228H , SUP60N06-18 , SUB60N06-18 , BLV108 , CS150N03A8 , BLV1N60A , BLV2N60 , BLV4N60 , BLV640 , BLV6N60 , BLV730 , BLV740 , BLV7N60 .

History: 2SK3774-01S | PTY12HN06 | IPS70R600P7S | SSF3N80D

Keywords - BLV1N60 MOSFET datasheet

 BLV1N60 cross reference
 BLV1N60 equivalent finder
 BLV1N60 lookup
 BLV1N60 substitution
 BLV1N60 replacement

 

 
Back to Top

 


 
.