BLV2N60 PDF and Equivalents Search

 

BLV2N60 Specs and Replacement

Type Designator: BLV2N60

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 23 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 11.6 nS

Cossⓘ - Output Capacitance: 33 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 4.4 Ohm

Package: TO-220F

BLV2N60 substitution

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BLV2N60 datasheet

 ..1. Size:456K  belling
 blv2n60.pdf pdf_icon

BLV2N60

BLV2N60 N-channel Enhancement Mode Power MOSFET 600V DSS Avalanche Energy Specified BV Fast Switching RDS(ON) 4.4 Simple Drive Requirements ID 2A Description This advanced high voltage MOSFET is produced using Belling s proprietary DMOS technology. Designed for high efficiency switch mode power supply. Absolute Maximum Ratings ( TC=25oC unless... See More ⇒

Detailed specifications: NCE60H10F, STK0760P, TPC8228H, SUP60N06-18, SUB60N06-18, BLV108, BLV1N60, BLV1N60A, STF13NM60N, BLV4N60, BLV640, BLV6N60, BLV730, BLV740, BLV7N60, BLV830, BLV840

Keywords - BLV2N60 MOSFET specs

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