BLV4N60 MOSFET. Datasheet pdf. Equivalent
Type Designator: BLV4N60
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 104 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 4 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 23.7 nC
trⓘ - Rise Time: 21 nS
Cossⓘ - Output Capacitance: 125 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 2.2 Ohm
Package: TO-220
BLV4N60 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
BLV4N60 Datasheet (PDF)
..1. Size:463K belling
blv4n60.pdf
blv4n60.pdf
BLV4N60 N-channel Enhancement Mode Power MOSFET 600V DSS Avalanche Energy Specified BV Fast Switching RDS(ON) 2.2 Simple Drive Requirements ID 4ADescription This advanced high voltage MOSFET is produced using Bellings proprietary DMOS technology. Designed for high efficiency switch mode power supply. Absolute Maximum Ratings ( TC=25oC unless
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
