BLV4N60 Specs and Replacement
Type Designator: BLV4N60
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 104 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 4 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 21 nS
Cossⓘ - Output Capacitance: 125 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.2 Ohm
Package: TO-220
BLV4N60 substitution
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BLV4N60 datasheet
blv4n60.pdf
BLV4N60 N-channel Enhancement Mode Power MOSFET 600V DSS Avalanche Energy Specified BV Fast Switching RDS(ON) 2.2 Simple Drive Requirements ID 4A Description This advanced high voltage MOSFET is produced using Belling s proprietary DMOS technology. Designed for high efficiency switch mode power supply. Absolute Maximum Ratings ( TC=25oC unless... See More ⇒
Detailed specifications: STK0760P, TPC8228H, SUP60N06-18, SUB60N06-18, BLV108, BLV1N60, BLV1N60A, BLV2N60, IRFZ24N, BLV640, BLV6N60, BLV730, BLV740, BLV7N60, BLV830, BLV840, BLVP304
Keywords - BLV4N60 MOSFET specs
BLV4N60 cross reference
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BLV4N60 substitution
BLV4N60 replacement
Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
History: IXFB110N60P3 | ECH8656 | IXFB120N50P2 | SSH7N90A
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