All MOSFET. BLV4N60 Datasheet

 

BLV4N60 Datasheet and Replacement


   Type Designator: BLV4N60
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 104 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 21 nS
   Cossⓘ - Output Capacitance: 125 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.2 Ohm
   Package: TO-220
 

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BLV4N60 Datasheet (PDF)

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BLV4N60

BLV4N60 N-channel Enhancement Mode Power MOSFET 600V DSS Avalanche Energy Specified BV Fast Switching RDS(ON) 2.2 Simple Drive Requirements ID 4ADescription This advanced high voltage MOSFET is produced using Bellings proprietary DMOS technology. Designed for high efficiency switch mode power supply. Absolute Maximum Ratings ( TC=25oC unless

Datasheet: STK0760P , TPC8228H , SUP60N06-18 , SUB60N06-18 , BLV108 , BLV1N60 , BLV1N60A , BLV2N60 , AON6380 , BLV640 , BLV6N60 , BLV730 , BLV740 , BLV7N60 , BLV830 , BLV840 , BLVP304 .

History: TPA120R800A

Keywords - BLV4N60 MOSFET datasheet

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