BLV6N60 Datasheet. Specs and Replacement

Type Designator: BLV6N60  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 125 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 19 nS

Cossⓘ - Output Capacitance: 158 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm

Package: TO-220

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BLV6N60 datasheet

 ..1. Size:487K  belling
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BLV6N60

BLV6N60 N-channel Enhancement Mode Power MOSFET 600V DSS Avalanche Energy Specified BV Fast Switching RDS(ON) 1.2 Simple Drive Requirements ID 6A Description This advanced high voltage MOSFET is produced using Belling s proprietary DMOS technology. Designed for high efficiency switch mode power supply. Absolute Maximum Ratings ( TC=25oC unless... See More ⇒

Detailed specifications: SUP60N06-18, SUB60N06-18, BLV108, BLV1N60, BLV1N60A, BLV2N60, BLV4N60, BLV640, SKD502T, BLV730, BLV740, BLV7N60, BLV830, BLV840, BLVP304, BS107, BS107AG

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