BLV6N60 PDF and Equivalents Search

 

BLV6N60 Specs and Replacement

Type Designator: BLV6N60

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 125 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 19 nS

Cossⓘ - Output Capacitance: 158 pF

Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm

Package: TO-220

BLV6N60 substitution

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BLV6N60 datasheet

 ..1. Size:487K  belling
 blv6n60.pdf pdf_icon

BLV6N60

BLV6N60 N-channel Enhancement Mode Power MOSFET 600V DSS Avalanche Energy Specified BV Fast Switching RDS(ON) 1.2 Simple Drive Requirements ID 6A Description This advanced high voltage MOSFET is produced using Belling s proprietary DMOS technology. Designed for high efficiency switch mode power supply. Absolute Maximum Ratings ( TC=25oC unless... See More ⇒

Detailed specifications: SUP60N06-18 , SUB60N06-18 , BLV108 , BLV1N60 , BLV1N60A , BLV2N60 , BLV4N60 , BLV640 , 8N60 , BLV730 , BLV740 , BLV7N60 , BLV830 , BLV840 , BLVP304 , BS107 , BS107AG .

History: UK3568 | 9N50 | AP3409MI | 4N60K | UF830

Keywords - BLV6N60 MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.

 

 

 


 
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