BLV830 Specs and Replacement
Type Designator: BLV830
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 75 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 4.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 46 nS
Cossⓘ - Output Capacitance: 100 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm
Package: TO-220
BLV830 substitution
- MOSFET ⓘ Cross-Reference Search
BLV830 datasheet
blv830.pdf
BLV830 N-channel Enhancement Mode Power MOSFET 500V DSS Avalanche Energy Specified BV Fast Switching RDS(ON) 1.5 Simple Drive Requirements ID 4.5A Description This advanced high voltage MOSFET is produced using Belling s proprietary DMOS technology. Designed for high efficiency switch mode power supply. Absolute Maximum Ratings ( TC=25oC unles... See More ⇒
Detailed specifications: BLV1N60A, BLV2N60, BLV4N60, BLV640, BLV6N60, BLV730, BLV740, BLV7N60, IRFB31N20D, BLV840, BLVP304, BS107, BS107AG, BS107ARL1, BS107ARL1G, BS107KL, BS107PSTOA
Keywords - BLV830 MOSFET specs
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
History: AUIRF7759L2TR | BSC220N20NSFD
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