BS170FTC Datasheet. Specs and Replacement
Type Designator: BS170FTC 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 0.33 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 0.15 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
RDSonⓘ - Maximum Drain-Source On-State Resistance: 5 Ohm
Package: SOT-23
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BS170FTC datasheet
..1. Size:17K zetex
bs170fta bs170ftc.pdf 
SOT23 N-CHANNEL ENHANCEMENT BS170F MODE VERTICAL DMOS FET ISSUE 3 - JANUARY 1996 FEATURES * 60Volt VDS S * RDS(ON) = 5 D G PARTMARKING DETAIL MV SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Drain-Source Voltage VDS 60 V Continuous Drain Current at Tamb=25 C ID 0.15 mA Pulsed Drain Current IDM 3A Gate Source Voltage VGS 20 V Power Dissipation at Tamb=2... See More ⇒
8.1. Size:20K diodes
bs170f.pdf
SOT23 N-CHANNEL ENHANCEMENT BS170F MODE VERTICAL DMOS FET ISSUE 3 - JANUARY 1996 FEATURES * 60Volt VDS S * RDS(ON) = 5 D G PARTMARKING DETAIL MV SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Drain-Source Voltage VDS 60 V Continuous Drain Current at Tamb=25 C ID 0.15 mA Pulsed Drain Current IDM 3A Gate Source Voltage VGS 20 V Power Dissipation at Tamb=2... See More ⇒
8.2. Size:67K no
bs170f.pdf
ST3-ANLNACMN O2NC HNEEHNEET B10 S7F M EETADOFT ODVRILMSE C IU3JNAY96 S SE-AUR19 FAUE ETRS *6VlVS 0o tD S *RSN= 5 D( O) D G PRMRI DTI V ATAKGEA N LM ST3 O2 ASLTMX AI BOUE AIU NS MMRTG. PRMTR SMO VLE UI AAEE YBL AU NT Da-or Vlg VS 6 V rn eoae 0 iSuc t D Cnnosrnurttab2 I 05 m otuu Da CrnaTm=5 . A i i e C 1 D PldriCrn I 3 A ue Da e s nurt D M GtS... See More ⇒
9.1. Size:77K motorola
bs170rev1x.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by BS170/D TMOS FET Switching N Channel Enhancement BS170 1 DRAIN 2 GATE 3 SOURCE MAXIMUM RATINGS 1 2 Rating Symbol Value Unit 3 Drain Source Voltage VDS 60 Vdc CASE 29 04, STYLE 30 Gate Source Voltage TO 92 (TO 226AA) Continuous VGS 20 Vdc Non repetitive (tp 50 s) VGSM 40 Vpk... See More ⇒
9.2. Size:49K philips
bs170 cnv 2.pdf
DISCRETE SEMICONDUCTORS DATA SHEET BS170 N-channel vertical D-MOS transistor April 1995 Product specification File under Discrete Semiconductors, SC13b Philips Semiconductors Product specification N-channel vertical D-MOS transistor BS170 DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode Drain-source voltage VDS max. 60 V vertical D-MOS transistor in TO-92 Gate-source v... See More ⇒
9.3. Size:652K fairchild semi
bs170.pdf
April 1995 BS170 / MMBF170 N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode field effect High density cell design for low RDS(ON). transistors are produced using Fairchild's proprietary, high Voltage controlled small signal switch. cell density, DMOS technology. These products have been designed to minimize on-state resi... See More ⇒
9.4. Size:1298K fairchild semi
bs170 d26z bs170 d27z bs170 d74z bs170 d75z bs170 l34z bs170 mmbf170.pdf
March 2010 BS170 / MMBF170 N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode field effect High density cell design for low RDS(ON). transistors are produced using Fairchild's proprietary, high Voltage controlled small signal switch. cell density, DMOS technology. These products have been designed to minimize on-s... See More ⇒
9.5. Size:93K vishay
2n7000kl bs170kl.pdf
2N7000KL/BS170KL Vishay Siliconix N-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) rDS(on) ( ) VGS(th) (V) ID (A) Pb-free ESD Protected 2000 V Available 2 at VGS = 10 V 0.47 60 1.0 to 2.5 RoHS* APPLICATIONS COMPLIANT 4 at VGS = 4.5 V 0.33 Direct Logic-Level Interface TTL/CMOS Solid-State Relays Drivers Relays,... See More ⇒
9.6. Size:58K vishay
2n7000 2n7002 vq1000j-p bs170.pdf
2N7000/2N7002, VQ1000J/P, BS170 Vishay Siliconix N-Channel 60-V (D-S) MOSFET PRODUCT SUMMARY Part Number V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) 5 @ VGS = 10 V 0.8 to 3 0.2 2N7000 2N7002 7.5 @ VGS = 10 V 1 to 2.5 0.115 60 VQ1000J 5.5 @ VGS = 10 V 0.8 to 2.5 0.225 VQ1000P 5.5 @ VGS = 10 V 0.8 to 2.5 0.225 BS170 5 @ VGS = 10 V 0.8 to 3 0.5 FEATURES BENEFITS APPLICATIONS D... See More ⇒
9.7. Size:58K vishay
2n7000 2n7002 vq1000j vq1000p bs170.pdf
2N7000/2N7002, VQ1000J/P, BS170 Vishay Siliconix N-Channel 60-V (D-S) MOSFET PRODUCT SUMMARY Part Number V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) 5 @ VGS = 10 V 0.8 to 3 0.2 2N7000 2N7002 7.5 @ VGS = 10 V 1 to 2.5 0.115 60 VQ1000J 5.5 @ VGS = 10 V 0.8 to 2.5 0.225 VQ1000P 5.5 @ VGS = 10 V 0.8 to 2.5 0.225 BS170 5 @ VGS = 10 V 0.8 to 3 0.5 FEATURES BENEFITS APPLICATIONS D... See More ⇒
9.8. Size:92K onsemi
bs170g.pdf
BS170G Small Signal MOSFET 500 mA, 60 Volts N-Channel TO-92 (TO-226) Features http //onsemi.com This is a Pb-Free Device* 500 mA, 60 Volts MAXIMUM RATINGS RDS(on) = 5.0 W Rating Symbol Value Unit Drain -Source Voltage VDS 60 Vdc N-Channel Gate-Source Voltage D - Continuous VGS 20 Vdc - Non-repetitive (tp 50 ms) VGSM 40 Vpk Drain Current (Note) ID 0.5 Adc G Total... See More ⇒
9.10. Size:61K onsemi
bs170.pdf
BS170 Small Signal MOSFET 500 mA, 60 Volts N-Channel TO-92 (TO-226) Features www.onsemi.com This is a Pb-Free Device* 500 mA, 60 Volts MAXIMUM RATINGS Rating Symbol Value Unit RDS(on) = 5.0 W Drain-Source Voltage VDS 60 Vdc N-Channel Gate-Source Voltage - Continuous VGS 20 Vdc D - Non-repetitive (tp 50 ms) VGSM 40 Vpk Drain Current (Note) ID 0.5 Adc Total Device Di... See More ⇒
9.11. Size:88K onsemi
bs170g bs170rl1g bs170rlra bs170rlrag bs170rlrmg bs170rlrp bs170rlrpg bs170zl1g.pdf
BS170G Small Signal MOSFET 500 mA, 60 Volts N-Channel TO-92 (TO-226) Features http //onsemi.com This is a Pb-Free Device* 500 mA, 60 Volts MAXIMUM RATINGS RDS(on) = 5.0 W Rating Symbol Value Unit Drain -Source Voltage VDS 60 Vdc N-Channel Gate-Source Voltage D - Continuous VGS 20 Vdc - Non-repetitive (tp 50 ms) VGSM 40 Vpk Drain Current (Note) ID 0.5 Adc G Total... See More ⇒
9.12. Size:15K no
bs170p.pdf
N-CHANNEL ENHANCEMENT BS170P MODE VERTICAL DMOS FET ISSUE 2 SEPT 93 FEATURES * 60 Volt VDS * RDS(on)=5 D G S REFER TO ZVN3306A FOR GRAPHS E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Drain-Source Voltage VDS 60 V Continuous Drain Current at Tamb =25 C ID 270 mA Pulsed Drain Current IDM 3A Gate-Source Voltage VGS 20 V Power Dissipati... See More ⇒
9.13. Size:403K shantou-huashan
hbs170.pdf
Shantou Huashan Electronic Devices Co.,Ltd. HBS170 N-Channel Enhancement Mode Field Effect Transistor General Description These products have been designed to minimize on-state resistance TO-92 While provide rugged, reliable, and fast switching performance. They can be used in most applications requiring up to 500mA DC. These products are particularly suited for low voltage, ... See More ⇒
9.14. Size:15K zetex
bs170pstoa bs170pstob bs170pstz.pdf
N-CHANNEL ENHANCEMENT BS170P MODE VERTICAL DMOS FET ISSUE 2 SEPT 93 FEATURES * 60 Volt VDS * RDS(on)=5 D G S REFER TO ZVN3306A FOR GRAPHS E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Drain-Source Voltage VDS 60 V Continuous Drain Current at Tamb =25 C ID 270 mA Pulsed Drain Current IDM 3A Gate-Source Voltage VGS 20 V Power Dissipati... See More ⇒
Detailed specifications: BS108G, BS108ZL1G, BS170D26Z, BS170D27Z, BS170D74Z, BS170D75Z, BS170L34Z, BS170FTA, 2SK2842, BS170G, BS170PSTOA, BS170PSTOB, BS170PSTZ, BS170RL1G, BS170RLRA, BS170RLRAG, BS170RLRMG
Keywords - BS170FTC MOSFET specs
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