All MOSFET. BSB165N15NZ3G Datasheet

 

BSB165N15NZ3G Datasheet and Replacement


   Type Designator: BSB165N15NZ3G
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.8 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 9 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 240 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0165 Ohm
   Package: MG-WDSON-2
 

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BSB165N15NZ3G Datasheet (PDF)

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BSB165N15NZ3G

n-Channel Power MOSFETOptiMOSBSB165N15NZ3G Data Sheet2.2, 2011-07-20Final Industrial & MultimarketOptiMOS Power-MOSFETBSB165N15NZ3 G1 DescriptionOptiMOS150V products are class leading power MOSFETs for highest powerdensity and energy efficient solutions. Ultra low gate- and output charges togetherwith lowest on state resistance in small footprint packages mak

Datasheet: BSB008NE2LX , BSB012N03LX3 , BSB012NE2LXI , BSB013NE2LXI , BSB017N03LX3 , BSB044N08NN3G , BSB056N10NN3G , BSB104N08NP3G , STP75NF75 , BSB280N15NZ3G , BSC009NE2LS , BSC009NE2LS5 , BSC009NE2LS5I , BSC010N04LS , BSC010N04LSI , BSC010NE2LSI , BSC011N03LSI .

History: NCE80H12D | HSU3014 | SVT078R0ND | QM2429S | 2SK242

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