BSB280N15NZ3G Datasheet and Replacement
Type Designator: BSB280N15NZ3G
Marking Code: 0215'
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 2.8 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 9 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 15 nC
trⓘ - Rise Time: 6 nS
Cossⓘ - Output Capacitance: 180 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.028 Ohm
Package: MG-WDSON-2
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BSB280N15NZ3G Datasheet (PDF)
bsb280n15nz3g.pdf

n-Channel Power MOSFETOptiMOSBSB280N15NZ3 G Data Sheet2.5, 2011-09-16Final Industrial & MultimarketOptiMOS Power-MOSFETBSB280N15NZ3 G1 DescriptionOptiMOS150V products are class leading power MOSFETs for highest powerdensity and energy efficient solutions. Ultra low gate- and output charges togetherwith lowest on state resistance in small footprint packages make
Datasheet: AM3401 , AM3402N , AM3403P , AM3405P , AM3406 , AM3406N , AM3407 , AM3407PE , IRFZ48N , AM3412N , AM3413 , AM3413P , AM3415 , AM3415A , AM3416 , AM3422 , AM3423P .
History: ELM13401CA
Keywords - BSB280N15NZ3G MOSFET datasheet
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History: ELM13401CA



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