BSB280N15NZ3G Datasheet. Specs and Replacement

Type Designator: BSB280N15NZ3G  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.8 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 9 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 6 nS

Cossⓘ - Output Capacitance: 180 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.028 Ohm

Package: MG-WDSON-2

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BSB280N15NZ3G datasheet

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BSB280N15NZ3G

n-Channel Power MOSFET OptiMOS BSB280N15NZ3 G Data Sheet 2.5, 2011-09-16 Final Industrial & Multimarket OptiMOS Power-MOSFET BSB280N15NZ3 G 1 Description OptiMOS 150V products are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate- and output charges together with lowest on state resistance in small footprint packages make... See More ⇒

Detailed specifications: BSB012N03LX3, BSB012NE2LXI, BSB013NE2LXI, BSB017N03LX3, BSB044N08NN3G, BSB056N10NN3G, BSB104N08NP3G, BSB165N15NZ3G, IRFP250N, BSC009NE2LS, BSC009NE2LS5, BSC009NE2LS5I, BSC010N04LS, BSC010N04LSI, BSC010NE2LSI, BSC011N03LSI, BSC014N03LS

Keywords - BSB280N15NZ3G MOSFET specs

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