All MOSFET. BSB280N15NZ3G Datasheet

 

BSB280N15NZ3G Datasheet and Replacement


   Type Designator: BSB280N15NZ3G
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.8 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 9 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 6 nS
   Cossⓘ - Output Capacitance: 180 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.028 Ohm
   Package: MG-WDSON-2
 

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BSB280N15NZ3G Datasheet (PDF)

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BSB280N15NZ3G

n-Channel Power MOSFETOptiMOSBSB280N15NZ3 G Data Sheet2.5, 2011-09-16Final Industrial & MultimarketOptiMOS Power-MOSFETBSB280N15NZ3 G1 DescriptionOptiMOS150V products are class leading power MOSFETs for highest powerdensity and energy efficient solutions. Ultra low gate- and output charges togetherwith lowest on state resistance in small footprint packages make

Datasheet: BSB012N03LX3 , BSB012NE2LXI , BSB013NE2LXI , BSB017N03LX3 , BSB044N08NN3G , BSB056N10NN3G , BSB104N08NP3G , BSB165N15NZ3G , AON7408 , BSC009NE2LS , BSC009NE2LS5 , BSC009NE2LS5I , BSC010N04LS , BSC010N04LSI , BSC010NE2LSI , BSC011N03LSI , BSC014N03LS .

History: TSP7N65M | 2SK888 | WMN30N80M3 | 2SJ605-Z | PHD44N06LT | SFF240J | BUZ83

Keywords - BSB280N15NZ3G MOSFET datasheet

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