BSC014N03MS PDF Specs and Replacement
Type Designator: BSC014N03MS
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 2.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 30 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 16 nS
Cossⓘ - Output Capacitance: 2600 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0014 Ohm
Package: PG-TDSON-8
BSC014N03MS substitution
BSC014N03MS PDF Specs
bsc014n03ms.pdf
BSC014N03MS G OptiMOS 3 M-Series Power-MOSFET Product Summary Features V 30 V DS Optimized for 5V driver application (Notebook, VGA, POL) R V =10 V 1.4 m DS(on),max GS Low FOMSW for High Frequency SMPS V =4.5 V 1.75 GS 100% avalanche tested I 100 A D N-channel PG-TDSON-8 Very low on-resistance R @ V =4.5 V DS(on) GS Excellent gate charge x R prod... See More ⇒
bsc014n03msg.pdf
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bsc014n03ls .pdf
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bsc014n03ls.pdf
BSC014N03LS G OptiMOS 3 Power-MOSFET Product Summary Features V 30 V DS Fast switching MOSFET for SMPS R 1.4 m DS(on),max Optimized technology for DC/DC converters I 100 A D Qualified according to JEDEC1) for target applications PG-TDSON-8 N-channel Logic level; Excellent gate charge x R product (FOM) DS(on) Very low on-resistance R DS(on) ... See More ⇒
Detailed specifications: BSC009NE2LS , BSC009NE2LS5 , BSC009NE2LS5I , BSC010N04LS , BSC010N04LSI , BSC010NE2LSI , BSC011N03LSI , BSC014N03LS , IRLB4132 , BSC014N04LS , BSC014N04LSI , BSC014N06NS , BSC014NE2LSI , BSC016N03LS , BSC016N03MS , BSC016N06NS , BSC018NE2LSI .
Keywords - BSC014N03MS MOSFET specs
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
