BSC014N06NS Datasheet. Specs and Replacement

Type Designator: BSC014N06NS  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 30 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 10 nS

Cossⓘ - Output Capacitance: 1500 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.00145 Ohm

Package: PG-TDSON-8

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BSC014N06NS datasheet

 ..1. Size:511K  infineon
bsc014n06ns.pdf pdf_icon

BSC014N06NS

Type BSC014N06NS OptiMOSTM Power-Transistor Features Product Summary Optimized for high performance SMPS, e.g. sync. rec. VDS 60 V 100% avalanche tested RDS(on),max 1.45 mW Superior thermal resistance ID 100 A N-channel QOSS nC 100 Qualified according to JEDEC1) for target applications QG(0V..10V) nC 89 Pb-free lead plating; RoHS compliant PG-... See More ⇒

 0.1. Size:976K  infineon
bsc014n06nssc.pdf pdf_icon

BSC014N06NS

BSC014N06NSSC MOSFET PG-WSON-8-2 OptiMOSTM Power-Transistor, 60 V Features Double side cooled package-with lowest Junction-top thermal resistance tab 175 C rated Optimized for high performance SMPS, e.g. sync. rec. 5 6 100% avalanche tested 7 8 Superior thermal resistance 4 3 N-channel 2 1 Pb-free lead plating; RoHS compliant Halogen-free ac... See More ⇒

 6.1. Size:641K  infineon
bsc014n04ls.pdf pdf_icon

BSC014N06NS

BSC014N04LS OptiMOSTM Power-MOSFET Product Summary Features VDS 40 V Optimized for synchronous rectification RDS(on),max 1.4 mW Very low on-state resistance R DS(on) ID 100 A 100% avalanche tested Qoss 54 nC Superior thermal resistance Qg(0V..10V) 61 nC N-channel, logic level PG-TDSON-8 FL Qualified according to JEDEC1) for target applications (... See More ⇒

 6.2. Size:598K  infineon
bsc014n04lsi.pdf pdf_icon

BSC014N06NS

BSC014N04LSI OptiMOSTM Power-MOSFET Product Summary Features VDS 40 V Optimized for synchronous rectification RDS(on),max 1.45 mW Integrated monolithic Schottky-like diode A ID 100 Very low on-resistance R DS(on) QOSS 53 nC 100% avalanche tested 55 nC QG(0V..10V) N-channel, logic level PG-TDSON-8 FL Qualified according to JEDEC1) for target a... See More ⇒

Detailed specifications: BSC010N04LS, BSC010N04LSI, BSC010NE2LSI, BSC011N03LSI, BSC014N03LS, BSC014N03MS, BSC014N04LS, BSC014N04LSI, IRFP260, BSC014NE2LSI, BSC016N03LS, BSC016N03MS, BSC016N06NS, BSC018NE2LSI, BSC019N02KS, BSC019N04LS, BSC020N03LS

Keywords - BSC014N06NS MOSFET specs

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