BSC019N02KS Datasheet and Replacement
Type Designator: BSC019N02KS
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 2.8 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 30 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 187 nS
Cossⓘ - Output Capacitance: 2700 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.00195 Ohm
Package: PG-TDSON-8
BSC019N02KS substitution
BSC019N02KS Datasheet (PDF)
bsc019n04ls.pdf

BSC019N04LSOptiMOSTM Power-MOSFETProduct Summary FeaturesVDS 40 V Optimized for high performance SMPS, e.g. sync. rec.RDS(on),max 1.9 mW Very low on-resistance R @ V =4.5 VDS(on) GSID 100 A 100% avalanche testedQOSS 37 nC Superior thermal resistanceQG(0V..10V) 41 nC N-channel Qualified according to JEDEC1) for target applicationsPG-TDSON-
bsc019n04nsg.pdf

BSC019N04NS GOptiMOS3 Power-TransistorProduct SummaryFeaturesV 40 VDS Fast switching MOSFET for SMPSR 1.9mDS(on),max Optimized technology for DC/DC convertersI 100 AD Qualified according to JEDEC1) for target applicationsPG-TDSON-8 N-channel; Normal level Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on)
Datasheet: BSC014N04LS , BSC014N04LSI , BSC014N06NS , BSC014NE2LSI , BSC016N03LS , BSC016N03MS , BSC016N06NS , BSC018NE2LSI , 5N60 , BSC019N04LS , BSC020N03LS , BSC020N03MS , BSC022N04LS , BSC025N03LS , BSC025N03MS , BSC026N02KS , BSC026N04LS .
History: SST111 | NTHS4101PT1G | 2SK538 | FDZ375P | STL70N10F3 | 2SK3541MGP | SFS12R08PNF
Keywords - BSC019N02KS MOSFET datasheet
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History: SST111 | NTHS4101PT1G | 2SK538 | FDZ375P | STL70N10F3 | 2SK3541MGP | SFS12R08PNF



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