BSC019N02KS Datasheet. Specs and Replacement

Type Designator: BSC019N02KS  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.8 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 30 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 187 nS

Cossⓘ - Output Capacitance: 2700 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.00195 Ohm

Package: PG-TDSON-8

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BSC019N02KS datasheet

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BSC019N02KS

BSC019N04LS OptiMOSTM Power-MOSFET Product Summary Features VDS 40 V Optimized for high performance SMPS, e.g. sync. rec. RDS(on),max 1.9 mW Very low on-resistance R @ V =4.5 V DS(on) GS ID 100 A 100% avalanche tested QOSS 37 nC Superior thermal resistance QG(0V..10V) 41 nC N-channel Qualified according to JEDEC1) for target applications PG-TDSON-... See More ⇒

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Detailed specifications: BSC014N04LS, BSC014N04LSI, BSC014N06NS, BSC014NE2LSI, BSC016N03LS, BSC016N03MS, BSC016N06NS, BSC018NE2LSI, AON7410, BSC019N04LS, BSC020N03LS, BSC020N03MS, BSC022N04LS, BSC025N03LS, BSC025N03MS, BSC026N02KS, BSC026N04LS

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.