All MOSFET. BSC019N02KS Datasheet

 

BSC019N02KS Datasheet and Replacement


   Type Designator: BSC019N02KS
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.8 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 30 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 187 nS
   Cossⓘ - Output Capacitance: 2700 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.00195 Ohm
   Package: PG-TDSON-8
 

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BSC019N02KS Datasheet (PDF)

 ..1. Size:663K  infineon
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BSC019N02KS

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 0.1. Size:666K  infineon
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BSC019N02KS

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 6.1. Size:526K  infineon
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BSC019N02KS

BSC019N04LSOptiMOSTM Power-MOSFETProduct Summary FeaturesVDS 40 V Optimized for high performance SMPS, e.g. sync. rec.RDS(on),max 1.9 mW Very low on-resistance R @ V =4.5 VDS(on) GSID 100 A 100% avalanche testedQOSS 37 nC Superior thermal resistanceQG(0V..10V) 41 nC N-channel Qualified according to JEDEC1) for target applicationsPG-TDSON-

 6.2. Size:377K  infineon
 bsc019n04nsg.pdf pdf_icon

BSC019N02KS

BSC019N04NS GOptiMOS3 Power-TransistorProduct SummaryFeaturesV 40 VDS Fast switching MOSFET for SMPSR 1.9mDS(on),max Optimized technology for DC/DC convertersI 100 AD Qualified according to JEDEC1) for target applicationsPG-TDSON-8 N-channel; Normal level Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on)

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Datasheet: BSC014N04LS , BSC014N04LSI , BSC014N06NS , BSC014NE2LSI , BSC016N03LS , BSC016N03MS , BSC016N06NS , BSC018NE2LSI , RFP50N06 , BSC019N04LS , BSC020N03LS , BSC020N03MS , BSC022N04LS , BSC025N03LS , BSC025N03MS , BSC026N02KS , BSC026N04LS .

History: 25N10G-TM3-T | APT4080BN

Keywords - BSC019N02KS MOSFET datasheet

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