BSC019N02KS PDF Specs and Replacement
Type Designator: BSC019N02KS
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 2.8 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 30 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 187 nS
Cossⓘ - Output Capacitance: 2700 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.00195 Ohm
Package: PG-TDSON-8
BSC019N02KS substitution
BSC019N02KS PDF Specs
bsc019n04ls.pdf
BSC019N04LS OptiMOSTM Power-MOSFET Product Summary Features VDS 40 V Optimized for high performance SMPS, e.g. sync. rec. RDS(on),max 1.9 mW Very low on-resistance R @ V =4.5 V DS(on) GS ID 100 A 100% avalanche tested QOSS 37 nC Superior thermal resistance QG(0V..10V) 41 nC N-channel Qualified according to JEDEC1) for target applications PG-TDSON-... See More ⇒
Detailed specifications: BSC014N04LS , BSC014N04LSI , BSC014N06NS , BSC014NE2LSI , BSC016N03LS , BSC016N03MS , BSC016N06NS , BSC018NE2LSI , AON7410 , BSC019N04LS , BSC020N03LS , BSC020N03MS , BSC022N04LS , BSC025N03LS , BSC025N03MS , BSC026N02KS , BSC026N04LS .
History: NVA4153N
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
History: NVA4153N
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