BSC026N02KS Datasheet. Specs and Replacement
Type Designator: BSC026N02KS 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 2.8 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 25 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 115 nS
Cossⓘ - Output Capacitance: 1700 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0026 Ohm
Package: PG-TDSON-8
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BSC026N02KS substitution
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BSC026N02KS datasheet
bsc026n08ns5.pdf
MOSFET Metal Oxide Semiconductor Field Effect Transistor OptiMOSTM OptiMOSTM5 Power-Transistor, 80 V BSC026N08NS5 Data Sheet Rev. 2.0 Final Power Management & Multimarket OptiMOSTM5 Power-Transistor, 80 V BSC026N08NS5 SuperSO8 1 Description 5 8 6 7 Features 7 6 8 5 Optimized for Synchronous Rectification in server and desktop 100% avalanche tested Superior t... See More ⇒
bsc026n04ls.pdf
BSC026N04LS OptiMOSTM Power-MOSFET Product Summary Features VDS 40 V Optimized for high performance SMPS, e.g. sync. rec. RDS(on),max 2.6 mW Very low on-resistance R @ V =4.5 V DS(on) GS ID 100 A 100% avalanche tested QOSS 28 nC Superior thermal resistance QG(0V..10V) 32 nC N-channel Qualified according to JEDEC1) for target applications PG-TDSON-... See More ⇒
Detailed specifications: BSC018NE2LSI, BSC019N02KS, BSC019N04LS, BSC020N03LS, BSC020N03MS, BSC022N04LS, BSC025N03LS, BSC025N03MS, CS150N03A8, BSC026N04LS, BSC026N08NS5, BSC026NE2LS5, BSC028N06NS, BSC030N03LS, BSC030N03MS, BSC030N08NS5, BSC032N04LS
Keywords - BSC026N02KS MOSFET specs
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
