All MOSFET. BSC026N02KS Datasheet

 

BSC026N02KS Datasheet and Replacement


   Type Designator: BSC026N02KS
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.8 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 25 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 115 nS
   Cossⓘ - Output Capacitance: 1700 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0026 Ohm
   Package: PG-TDSON-8
 

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BSC026N02KS Datasheet (PDF)

 ..1. Size:659K  infineon
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BSC026N02KS

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 0.1. Size:662K  infineon
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BSC026N02KS

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 6.1. Size:1182K  infineon
 bsc026n08ns5.pdf pdf_icon

BSC026N02KS

MOSFETMetal Oxide Semiconductor Field Effect TransistorOptiMOSTMOptiMOSTM5 Power-Transistor, 80 VBSC026N08NS5Data SheetRev. 2.0FinalPower Management & MultimarketOptiMOSTM5 Power-Transistor, 80 VBSC026N08NS5SuperSO81 Description5867Features7685 Optimized for Synchronous Rectification in server and desktop 100% avalanche tested Superior t

 6.2. Size:586K  infineon
 bsc026n04ls.pdf pdf_icon

BSC026N02KS

BSC026N04LSOptiMOSTM Power-MOSFETProduct Summary FeaturesVDS 40 V Optimized for high performance SMPS, e.g. sync. rec.RDS(on),max 2.6 mW Very low on-resistance R @ V =4.5 VDS(on) GSID 100 A 100% avalanche testedQOSS 28 nC Superior thermal resistanceQG(0V..10V) 32 nC N-channel Qualified according to JEDEC1) for target applicationsPG-TDSON-

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Datasheet: BSC018NE2LSI , BSC019N02KS , BSC019N04LS , BSC020N03LS , BSC020N03MS , BSC022N04LS , BSC025N03LS , BSC025N03MS , IRLB4132 , BSC026N04LS , BSC026N08NS5 , BSC026NE2LS5 , BSC028N06NS , BSC030N03LS , BSC030N03MS , BSC030N08NS5 , BSC032N04LS .

History: P1203BEA | 2SK888 | WMN30N80M3 | 2SJ605-Z | JCS6N90GDA | SFF240J | BUZ83

Keywords - BSC026N02KS MOSFET datasheet

 BSC026N02KS cross reference
 BSC026N02KS equivalent finder
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