BSC026N08NS5 PDF and Equivalents Search

 

BSC026N08NS5 PDF Specs and Replacement


   Type Designator: BSC026N08NS5
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 23 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics


   tr ⓘ - Rise Time: 14 nS
   Cossⓘ - Output Capacitance: 840 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0026 Ohm
   Package: PG-TDSON-8
 

 BSC026N08NS5 substitution

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BSC026N08NS5 PDF Specs

 ..1. Size:1182K  infineon
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BSC026N08NS5

MOSFET Metal Oxide Semiconductor Field Effect Transistor OptiMOSTM OptiMOSTM5 Power-Transistor, 80 V BSC026N08NS5 Data Sheet Rev. 2.0 Final Power Management & Multimarket OptiMOSTM5 Power-Transistor, 80 V BSC026N08NS5 SuperSO8 1 Description 5 8 6 7 Features 7 6 8 5 Optimized for Synchronous Rectification in server and desktop 100% avalanche tested Superior t... See More ⇒

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BSC026N08NS5

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BSC026N08NS5

BSC026N04LS OptiMOSTM Power-MOSFET Product Summary Features VDS 40 V Optimized for high performance SMPS, e.g. sync. rec. RDS(on),max 2.6 mW Very low on-resistance R @ V =4.5 V DS(on) GS ID 100 A 100% avalanche tested QOSS 28 nC Superior thermal resistance QG(0V..10V) 32 nC N-channel Qualified according to JEDEC1) for target applications PG-TDSON-... See More ⇒

 6.3. Size:659K  infineon
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BSC026N08NS5

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Detailed specifications: BSC019N04LS , BSC020N03LS , BSC020N03MS , BSC022N04LS , BSC025N03LS , BSC025N03MS , BSC026N02KS , BSC026N04LS , AON7506 , BSC026NE2LS5 , BSC028N06NS , BSC030N03LS , BSC030N03MS , BSC030N08NS5 , BSC032N04LS , BSC032NE2LS , BSC034N03LS .

History: FQU20N06L

Keywords - BSC026N08NS5 MOSFET specs

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