BSC028N06NS Datasheet and Replacement

TypeBSC028N06NSOptiMOSTM Power-TransistorProduct Summary FeaturesVDS 60 V Optimized for high performance SMPS, e.g. sync. rec.RDS(on),max 2.8 mW 100% avalanche testedID 100 A Superior thermal resistanceQoss 43 nC N-channelQG(0..10V) 37 nC Qualified according to JEDEC1) for target applications Pb-free lead plating; RoHS compliant Haloge

% ! % TM #:A0A=:2?E1)R + F2=:7:65 244@C5:?8 E@ $

BSC020N03LS GOptiMOS3 Power-MOSFETProduct SummaryFeatures V 30 VDS Fast switching MOSFET for SMPS R 2mDS(on),max Optimized technology for DC/DC converters I 100 AD Qualified according to JEDEC1) for target applicationsPG-TDSON-8 N-channel; Logic level Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on) Superio

MOSFETMetal Oxide Semiconductor Field Effect TransistorOptiMOSTMOptiMOSTM5 Power-Transistor, 80 VBSC026N08NS5Data SheetRev. 2.0FinalPower Management & MultimarketOptiMOSTM5 Power-Transistor, 80 VBSC026N08NS5SuperSO81 Description5867Features7685 Optimized for Synchronous Rectification in server and desktop 100% avalanche tested Superior t

BSC025N03MS GOptiMOS3 M-Series Power-MOSFETProduct SummaryV 30 VFeatures DSR V =10 V 2.5mDS(on),max GS Optimized for 5V driver application (Notebook, VGA, POL)V =4.5 V 3GS Low FOMSW for High Frequency SMPSI 100 AD 100% avalanche tested N-channel PG-TDSON-8 Very low on-resistance R @ V =4.5 VDS(on) GS Excellent gate charge x R product (

& " & E $;B1= !#& '$=;0@/? &@99-=DFeatures D Q 2CD CG:D49:?8 ') - . 7@B -'*- m D n) m xQ ) AD:>:J65 D649?@=@8I 7@B 4@?F6BD6BC 1 D1)Q + E2=:7:65 244@B5:?8 D@ $ 7@B D2B86D 2AA=:42D:@?C G D ON Q ( 492??6= &@8:4 =6F6=Q H46==6?D 82D6 492B86 H AB@5E4D ) ' D n)Q /6BI =@G @? B6C:CD2?46 D n)Q -EA6B:@B D96B>2= B6C:CD2?46Q F2=2?496 B2D65Q *3 7B66 A=2D:?8 , @

BSC027N10NS5MOSFETTSON-8-3OptiMOSTM Power-Transistor, 100 V8756 6Features 758 Optimized for high performance SMPS, e.g. sync. rec.Pin 1 100% avalanche tested2433 Superior thermal resistance4 21 N-channel Pb-free lead plating; RoHS compliant Halogen-free according to IEC61249-2-21 175C ratedProduct Validation:Qualified fo

MOSFETMetal Oxide Semiconductor Field Effect TransistorOptiMOSTMOptiMOSTM5 Power-MOSFET, 25 VBSC026NE2LS5Data SheetRev. 2.0FinalPower Management & MultimarketOptiMOSTM5 Power-MOSFET, 25 VBSC026NE2LS5SuperSO81 Description5867Features7685 Optimized for high performance buck converters Very low on-resistance R @ V =4.5 VDS(on) GS 100% ava

% ! % D %0 G D ON S 07DK >AI A@ D7E;EF3@57 0 . A@ G S J57>>7@F 93F7 5:3D97 J BDA6G5F !* ( D n)1)S , G3>;8;76 355AD6;@9 FA % 8AD F3D97F 3BB>;53F;A@ES .GB7D;AD F:7

% ! % D #:A0

BSC027N06LS5MOSFETSuperSO8OptiMOSTM Power-Transistor, 60 V5867Features 7685 Optimized for high performance SMPS, e.g. sync. rec. 100% avalanche tested Superior thermal resistance N-channel4 Qualified according to JEDEC1) for target applications132 2 Pb-free lead plating; RoHS compliant3 14 Halogen-free according to IEC61249-2-

n-Channel Power MOSFETOptiMOSBSC024NE2LS Data Sheet2.1, 2011-09-20Final Industrial & MultimarketOptiMOS Power-MOSFETBSC024NE2LS1 DescriptionOptiMOS25V products are class leading power MOSFETs for highest powerdensity and energy efficient solutions. Ultra low gate- and output charges togetherwith lowest on state resistance in small footprint packages make OptiMO

% ! % D #:A0

BSC020N03MS GOptiMOS3 M-Series Power-MOSFETProduct SummaryFeaturesV 30 VDS Optimized for 5V driver application (Notebook, VGA, POL)R V =10 V 2mDS(on),max GSV =4.5 V 2.5 Low FOMSW for High Frequency SMPSGSI 100 AD 100% Avalanche testedPG-TDSON-8 N-channel Very low on-resistance R @ V =4.5 VDS(on) GS Excellent gate charge x R product

BSC025N03LS GOptiMOS3 Power-MOSFETProduct SummaryFeatures V 30 VDS Fast switching MOSFET for SMPS R 2.5mDS(on),max Optimized technology for DC/DC converters I 100 AD Qualified according to JEDEC1) for target applicationsPG-TDSON-8 N-channel; Logic level Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on) Super

BSC025N03LS GOptiMOS3 Power-MOSFETProduct SummaryFeatures V 30 VDS Fast switching MOSFET for SMPS R 2.5mDS(on),max Optimized technology for DC/DC converters I 100 AD Qualified according to JEDEC1) for target applicationsPG-TDSON-8 N-channel; Logic level Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on) Super

BSC020N03LS GOptiMOS3 Power-MOSFETProduct SummaryFeatures V 30 VDS Fast switching MOSFET for SMPS R 2mDS(on),max Optimized technology for DC/DC converters I 100 AD Qualified according to JEDEC1) for target applicationsPG-TDSON-8 N-channel; Logic level Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on) Superio

% ! % D #:A0

BSC020N03MS GOptiMOS3 M-Series Power-MOSFETProduct SummaryFeaturesV 30 VDS Optimized for 5V driver application (Notebook, VGA, POL)R V =10 V 2mDS(on),max GSV =4.5 V 2.5 Low FOMSW for High Frequency SMPSGSI 100 AD 100% Avalanche testedPG-TDSON-8 N-channel Very low on-resistance R @ V =4.5 VDS(on) GS Excellent gate charge x R product

BSC022N04LSOptiMOSTM Power-MOSFETProduct Summary FeaturesVDS 40 V Optimized for high performance SMPS, e.g. sync. rec.RDS(on),max 2.2 mW Very low on-resistance R @ V =4.5 VDS(on) GSID 100 A 100% avalanche testedQOSS 33 nC Superior thermal resistanceQG(0V..10V) 37 nC N-channel Qualified according to JEDEC1) for target applicationsPG-TDSON-

& " & E $;B1= !#& '$=;0@/? &@99-=DFeatures D Q 2CD CG:D49:?8 ') - . 7@B -'*- m D n) m xQ ) AD:>:J65 D649?@=@8I 7@B 4@?F6BD6BC 1 D1)Q + E2=:7:65 244@B5:?8 D@ $ 7@B D2B86D 2AA=:42D:@?C G D ON Q ( 492??6= &@8:4 =6F6=Q H46==6?D 82D6 492B86 H AB@5E4D ) ' D n)Q /6BI =@G @? B6C:CD2?46 D n)Q -EA6B:@B D96B>2= B6C:CD2?46Q F2=2?496 B2D65Q *3 7B66 A=2D:?8 , @

BSC027N04LS GOptiMOS3 Power-TransistorProduct SummaryFeaturesV 40 VDS Fast switching MOSFET for SMPSR 2.7mDS(on),max Optimized technology for DC/DC convertersI 100 AD Qualified according to JEDEC1) for target applicationsPG-TDSON-8 N-channel; Logic level Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on)

BSC026N04LSOptiMOSTM Power-MOSFETProduct Summary FeaturesVDS 40 V Optimized for high performance SMPS, e.g. sync. rec.RDS(on),max 2.6 mW Very low on-resistance R @ V =4.5 VDS(on) GSID 100 A 100% avalanche testedQOSS 28 nC Superior thermal resistanceQG(0V..10V) 32 nC N-channel Qualified according to JEDEC1) for target applicationsPG-TDSON-

BSC025N08LS5MOSFETSuperSO8OptiMOSTM5 Power-Transistor, 80 V5867Features 7685 Optimized for high performance SMPS, e.g. sync. Rec. 100% avalanche tested Superior thermal resistance N-channel, logic level4 Qualified according to JEDEC1) for target applications132 2 Pb-free lead plating; RoHS compliant3 14 Halogen-free according

BSC022N04LS6MOSFETTDSON-8 FL (enlarged source interconnection)OptiMOSTM 6 Power-Transistor, 40 V876Features5 Optimized for synchronous application Very low on-resistance RDS(on)1 52 6 100% avalanche tested734 8 Superior thermal resistance N-channel4 Pb-free lead plating; RoHS compliant3 Halogen-free according to IEC61249-2-21 2

BSC021N08NS5MOSFETTSON-8-3OptiMOSTM5 Power-Transistor, 80 V8756 6Features 758 Optimized for Synchronous Rectification in server and desktopPin 1 100% avalanche tested2433 Superior thermal resistance4 21 N-channel 175C rated Pb-free lead plating; RoHS compliant Halogen-free according to IEC61249-2-21Product Validation:Qua

% ! % D #:A0