Справочник MOSFET. BSC028N06NS

 

BSC028N06NS MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: BSC028N06NS
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 2.5 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 23 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 38 ns
   Cossⓘ - Выходная емкость: 660 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0028 Ohm
   Тип корпуса: PG-TDSON-8

 Аналог (замена) для BSC028N06NS

 

 

BSC028N06NS Datasheet (PDF)

 ..1. Size:437K  infineon
bsc028n06ns.pdf

BSC028N06NS
BSC028N06NS

TypeBSC028N06NSOptiMOSTM Power-TransistorProduct Summary FeaturesVDS 60 V Optimized for high performance SMPS, e.g. sync. rec.RDS(on),max 2.8 mW 100% avalanche testedID 100 A Superior thermal resistanceQoss 43 nC N-channelQG(0..10V) 37 nC Qualified according to JEDEC1) for target applications Pb-free lead plating; RoHS compliant Haloge

 5.1. Size:562K  infineon
bsc028n06ls3 bsc028n06ls3g.pdf

BSC028N06NS
BSC028N06NS

% ! % TM #:A0A=:2?E1)R + F2=:7:65 244@C5:?8 E@ $

 9.1. Size:385K  infineon
bsc020n03ls.pdf

BSC028N06NS
BSC028N06NS

BSC020N03LS GOptiMOS3 Power-MOSFETProduct SummaryFeatures V 30 VDS Fast switching MOSFET for SMPS R 2mDS(on),max Optimized technology for DC/DC converters I 100 AD Qualified according to JEDEC1) for target applicationsPG-TDSON-8 N-channel; Logic level Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on) Superio

 9.2. Size:1182K  infineon
bsc026n08ns5.pdf

BSC028N06NS
BSC028N06NS

MOSFETMetal Oxide Semiconductor Field Effect TransistorOptiMOSTMOptiMOSTM5 Power-Transistor, 80 VBSC026N08NS5Data SheetRev. 2.0FinalPower Management & MultimarketOptiMOSTM5 Power-Transistor, 80 VBSC026N08NS5SuperSO81 Description5867Features7685 Optimized for Synchronous Rectification in server and desktop 100% avalanche tested Superior t

 9.3. Size:194K  infineon
bsc025n03ms.pdf

BSC028N06NS
BSC028N06NS

BSC025N03MS GOptiMOS3 M-Series Power-MOSFETProduct SummaryV 30 VFeatures DSR V =10 V 2.5mDS(on),max GS Optimized for 5V driver application (Notebook, VGA, POL)V =4.5 V 3GS Low FOMSW for High Frequency SMPSI 100 AD 100% avalanche tested N-channel PG-TDSON-8 Very low on-resistance R @ V =4.5 VDS(on) GS Excellent gate charge x R product (

 9.4. Size:679K  infineon
bsc020n03ls .pdf

BSC028N06NS
BSC028N06NS

& " & E $;B1= !#& '$=;0@/? &@99-=DFeatures D Q 2CD CG:D49:?8 ') - . 7@B -'*- m D n) m xQ ) AD:>:J65 D649?@=@8I 7@B 4@?F6BD6BC 1 D1)Q + E2=:7:65 244@B5:?8 D@ $ 7@B D2B86D 2AA=:42D:@?C G D ON Q ( 492??6= &@8:4 =6F6=Q H46==6?D 82D6 492B86 H AB@5E4D ) ' D n)Q /6BI =@G @? B6C:CD2?46 D n)Q -EA6B:@B D96B>2= B6C:CD2?46Q F2=2?496 B2D65Q *3 7B66 A=2D:?8 , @

 9.5. Size:831K  infineon
bsc027n10ns5.pdf

BSC028N06NS
BSC028N06NS

BSC027N10NS5MOSFETTSON-8-3OptiMOSTM Power-Transistor, 100 V8756 6Features 758 Optimized for high performance SMPS, e.g. sync. rec.Pin 1 100% avalanche tested2433 Superior thermal resistance4 21 N-channel Pb-free lead plating; RoHS compliant Halogen-free according to IEC61249-2-21 175C ratedProduct Validation:Qualified fo

 9.6. Size:1492K  infineon
bsc026ne2ls5.pdf

BSC028N06NS
BSC028N06NS

MOSFETMetal Oxide Semiconductor Field Effect TransistorOptiMOSTMOptiMOSTM5 Power-MOSFET, 25 VBSC026NE2LS5Data SheetRev. 2.0FinalPower Management & MultimarketOptiMOSTM5 Power-MOSFET, 25 VBSC026NE2LS5SuperSO81 Description5867Features7685 Optimized for high performance buck converters Very low on-resistance R @ V =4.5 VDS(on) GS 100% ava

 9.7. Size:542K  infineon
bsc025n03msg.pdf

BSC028N06NS
BSC028N06NS

% ! % D %0 G D ON S 07DK >AI A@ D7E;EF3@57 0 . A@ G S J57>>7@F 93F7 5:3D97 J BDA6G5F !* ( D n)1)S , G3>;8;76 355AD6;@9 FA % 8AD F3D97F 3BB>;53F;A@ES .GB7D;AD F:7

 9.8. Size:633K  infineon
bsc020n025s.pdf

BSC028N06NS
BSC028N06NS

% ! % D #:A0

 9.9. Size:1333K  infineon
bsc027n06ls5.pdf

BSC028N06NS
BSC028N06NS

BSC027N06LS5MOSFETSuperSO8OptiMOSTM Power-Transistor, 60 V5867Features 7685 Optimized for high performance SMPS, e.g. sync. rec. 100% avalanche tested Superior thermal resistance N-channel4 Qualified according to JEDEC1) for target applications132 2 Pb-free lead plating; RoHS compliant3 14 Halogen-free according to IEC61249-2-

 9.10. Size:1625K  infineon
bsc024ne2ls.pdf

BSC028N06NS
BSC028N06NS

n-Channel Power MOSFETOptiMOSBSC024NE2LS Data Sheet2.1, 2011-09-20Final Industrial & MultimarketOptiMOS Power-MOSFETBSC024NE2LS1 DescriptionOptiMOS25V products are class leading power MOSFETs for highest powerdensity and energy efficient solutions. Ultra low gate- and output charges togetherwith lowest on state resistance in small footprint packages make OptiMO

 9.11. Size:631K  infineon
bsc022n03s.pdf

BSC028N06NS
BSC028N06NS

% ! % D #:A0

 9.12. Size:452K  infineon
bsc020n03ms.pdf

BSC028N06NS
BSC028N06NS

BSC020N03MS GOptiMOS3 M-Series Power-MOSFETProduct SummaryFeaturesV 30 VDS Optimized for 5V driver application (Notebook, VGA, POL)R V =10 V 2mDS(on),max GSV =4.5 V 2.5 Low FOMSW for High Frequency SMPSGSI 100 AD 100% Avalanche testedPG-TDSON-8 N-channel Very low on-resistance R @ V =4.5 VDS(on) GS Excellent gate charge x R product

 9.13. Size:382K  infineon
bsc025n03ls.pdf

BSC028N06NS
BSC028N06NS

BSC025N03LS GOptiMOS3 Power-MOSFETProduct SummaryFeatures V 30 VDS Fast switching MOSFET for SMPS R 2.5mDS(on),max Optimized technology for DC/DC converters I 100 AD Qualified according to JEDEC1) for target applicationsPG-TDSON-8 N-channel; Logic level Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on) Super

 9.14. Size:384K  infineon
bsc025n03lsg.pdf

BSC028N06NS
BSC028N06NS

BSC025N03LS GOptiMOS3 Power-MOSFETProduct SummaryFeatures V 30 VDS Fast switching MOSFET for SMPS R 2.5mDS(on),max Optimized technology for DC/DC converters I 100 AD Qualified according to JEDEC1) for target applicationsPG-TDSON-8 N-channel; Logic level Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on) Super

 9.15. Size:387K  infineon
bsc020n03lsg.pdf

BSC028N06NS
BSC028N06NS

BSC020N03LS GOptiMOS3 Power-MOSFETProduct SummaryFeatures V 30 VDS Fast switching MOSFET for SMPS R 2mDS(on),max Optimized technology for DC/DC converters I 100 AD Qualified according to JEDEC1) for target applicationsPG-TDSON-8 N-channel; Logic level Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on) Superio

 9.16. Size:662K  infineon
bsc026n02ksg.pdf

BSC028N06NS
BSC028N06NS

% ! % D #:A0

 9.17. Size:456K  infineon
bsc020n03msg.pdf

BSC028N06NS
BSC028N06NS

BSC020N03MS GOptiMOS3 M-Series Power-MOSFETProduct SummaryFeaturesV 30 VDS Optimized for 5V driver application (Notebook, VGA, POL)R V =10 V 2mDS(on),max GSV =4.5 V 2.5 Low FOMSW for High Frequency SMPSGSI 100 AD 100% Avalanche testedPG-TDSON-8 N-channel Very low on-resistance R @ V =4.5 VDS(on) GS Excellent gate charge x R product

 9.18. Size:586K  infineon
bsc022n04ls.pdf

BSC028N06NS
BSC028N06NS

BSC022N04LSOptiMOSTM Power-MOSFETProduct Summary FeaturesVDS 40 V Optimized for high performance SMPS, e.g. sync. rec.RDS(on),max 2.2 mW Very low on-resistance R @ V =4.5 VDS(on) GSID 100 A 100% avalanche testedQOSS 33 nC Superior thermal resistanceQG(0V..10V) 37 nC N-channel Qualified according to JEDEC1) for target applicationsPG-TDSON-

 9.19. Size:685K  infineon
bsc025n03ls .pdf

BSC028N06NS
BSC028N06NS

& " & E $;B1= !#& '$=;0@/? &@99-=DFeatures D Q 2CD CG:D49:?8 ') - . 7@B -'*- m D n) m xQ ) AD:>:J65 D649?@=@8I 7@B 4@?F6BD6BC 1 D1)Q + E2=:7:65 244@B5:?8 D@ $ 7@B D2B86D 2AA=:42D:@?C G D ON Q ( 492??6= &@8:4 =6F6=Q H46==6?D 82D6 492B86 H AB@5E4D ) ' D n)Q /6BI =@G @? B6C:CD2?46 D n)Q -EA6B:@B D96B>2= B6C:CD2?46Q F2=2?496 B2D65Q *3 7B66 A=2D:?8 , @

 9.20. Size:376K  infineon
bsc027n04lsg.pdf

BSC028N06NS
BSC028N06NS

BSC027N04LS GOptiMOS3 Power-TransistorProduct SummaryFeaturesV 40 VDS Fast switching MOSFET for SMPSR 2.7mDS(on),max Optimized technology for DC/DC convertersI 100 AD Qualified according to JEDEC1) for target applicationsPG-TDSON-8 N-channel; Logic level Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on)

 9.21. Size:586K  infineon
bsc026n04ls.pdf

BSC028N06NS
BSC028N06NS

BSC026N04LSOptiMOSTM Power-MOSFETProduct Summary FeaturesVDS 40 V Optimized for high performance SMPS, e.g. sync. rec.RDS(on),max 2.6 mW Very low on-resistance R @ V =4.5 VDS(on) GSID 100 A 100% avalanche testedQOSS 28 nC Superior thermal resistanceQG(0V..10V) 32 nC N-channel Qualified according to JEDEC1) for target applicationsPG-TDSON-

 9.22. Size:869K  infineon
bsc025n08ls5.pdf

BSC028N06NS
BSC028N06NS

BSC025N08LS5MOSFETSuperSO8OptiMOSTM5 Power-Transistor, 80 V5867Features 7685 Optimized for high performance SMPS, e.g. sync. Rec. 100% avalanche tested Superior thermal resistance N-channel, logic level4 Qualified according to JEDEC1) for target applications132 2 Pb-free lead plating; RoHS compliant3 14 Halogen-free according

 9.23. Size:1586K  infineon
bsc022n04ls6.pdf

BSC028N06NS
BSC028N06NS

BSC022N04LS6MOSFETTDSON-8 FL (enlarged source interconnection)OptiMOSTM 6 Power-Transistor, 40 V876Features5 Optimized for synchronous application Very low on-resistance RDS(on)1 52 6 100% avalanche tested734 8 Superior thermal resistance N-channel4 Pb-free lead plating; RoHS compliant3 Halogen-free according to IEC61249-2-21 2

 9.24. Size:1002K  infineon
bsc021n08ns5.pdf

BSC028N06NS
BSC028N06NS

BSC021N08NS5MOSFETTSON-8-3OptiMOSTM5 Power-Transistor, 80 V8756 6Features 758 Optimized for Synchronous Rectification in server and desktopPin 1 100% avalanche tested2433 Superior thermal resistance4 21 N-channel 175C rated Pb-free lead plating; RoHS compliant Halogen-free according to IEC61249-2-21Product Validation:Qua

 9.25. Size:659K  infineon
bsc026n02ks.pdf

BSC028N06NS
BSC028N06NS

% ! % D #:A0

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