BSC034N03LS MOSFET Datasheet: N-Ch, 30V, 22A. Full specification with pinout and replacement list

BSC034N03LS Specs and Replacement

Type Designator: BSC034N03LS

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 22 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 4.8 nS

Cossⓘ - Output Capacitance: 1000 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0034 Ohm

Package: PG-TDSON-8

BSC034N03LS substitution

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BSC034N03LS datasheet

..1. Size:631K infineon
bsc034n03ls.pdf pdf_icon

BSC034N03LS G OptiMOS 3 Power-MOSFET Product Summary Features VDS 30 V Fast switching MOSFET for SMPS RDS(on),max 3.4 mW Optimized technology for DC/DC converters ID 100 A Qualified according to JEDEC1) for target applications PG-TDSON-8 N-channel; Logic level Excellent gate charge x R product (FOM) DS(on) Very low on-resistance R DS(on) Sup... See More ⇒

..2. Size:686K infineon
bsc034n03ls .pdf pdf_icon

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0.1. Size:670K infineon
bsc034n03lsg.pdf pdf_icon

6.1. Size:489K infineon
bsc034n06ns.pdf pdf_icon

Type BSC034N06NS OptiMOSTM Power-Transistor Features Product Summary Optimized for high performance SMPS, e.g. sync. rec. VDS 60 V 100% avalanche tested RDS(on),max 3.4 mW Superior thermal resistance ID 100 A N-channel QOSS nC 37 Qualified according to JEDEC1) for target applications QG(0V..10V) 33 nC Pb-free lead plating; RoHS compliant Hal... See More ⇒