All MOSFET. BSC034N03LS Datasheet

 

BSC034N03LS Datasheet and Replacement


   Type Designator: BSC034N03LS
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 22 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 4.8 nS
   Cossⓘ - Output Capacitance: 1000 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0034 Ohm
   Package: PG-TDSON-8
 

 BSC034N03LS substitution

   - MOSFET ⓘ Cross-Reference Search

 

BSC034N03LS Datasheet (PDF)

 ..1. Size:631K  infineon
bsc034n03ls.pdf pdf_icon

BSC034N03LS

BSC034N03LS GOptiMOS3 Power-MOSFETProduct Summary Features VDS 30 V Fast switching MOSFET for SMPSRDS(on),max 3.4 mW Optimized technology for DC/DC convertersID 100 A Qualified according to JEDEC1) for target applicationsPG-TDSON-8 N-channel; Logic level Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on) Sup

 ..2. Size:686K  infineon
bsc034n03ls .pdf pdf_icon

BSC034N03LS

& " & E $;B1= !#& '$=;0@/? &@99-=D 1-?@=1> D Q 2CD CG:D49:?8 ') - . 7@B -'*- 4m D n) m xQ ) AD:>:J65 D649?@=@8I 7@B 4@?F6BD6BC 1 D1)Q + E2=:7:65 244@B5:?8 D@ $ 7@B D2B86D 2AA=:42D:@?C G D ON Q ( 492??6= &@8:4 =6F6=Q H46==6?D 82D6 492B86 H AB@5E4D ) ' D n)Q /6BI =@G @? B6C:CD2?46 D n)Q -EA6B:@B D96B>2= B6C:CD2?46Q F2=2?496 B2D65Q *3 7B66 A=2D:?

 0.1. Size:670K  infineon
bsc034n03lsg.pdf pdf_icon

BSC034N03LS

BSC034N03LS GOptiMOS3 Power-MOSFETProduct Summary Features VDS 30 V Fast switching MOSFET for SMPSRDS(on),max 3.4 mW Optimized technology for DC/DC convertersID 100 A Qualified according to JEDEC1) for target applicationsPG-TDSON-8 N-channel; Logic level Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on) Sup

 6.1. Size:489K  infineon
bsc034n06ns.pdf pdf_icon

BSC034N03LS

TypeBSC034N06NSOptiMOSTM Power-TransistorFeaturesProduct Summary Optimized for high performance SMPS, e.g. sync. rec.VDS 60 V 100% avalanche testedRDS(on),max 3.4 mW Superior thermal resistanceID 100 A N-channelQOSS nC 37 Qualified according to JEDEC1) for target applicationsQG(0V..10V) 33 nC Pb-free lead plating; RoHS compliant Hal

Datasheet: BSC026N08NS5 , BSC026NE2LS5 , BSC028N06NS , BSC030N03LS , BSC030N03MS , BSC030N08NS5 , BSC032N04LS , BSC032NE2LS , P0903BDG , BSC034N06NS , BSC035N10NS5 , BSC036NE7NS3G , BSC037N08NS5 , BSC039N06NS , BSC040N08NS5 , BSC040N10NS5 , BSC042N03LS .

History: DG2N60-252 | IRFP441R | RU2020H | IRF644NLPBF | HY1710M | NTMFS5C406NL | NDP603AL

Keywords - BSC034N03LS MOSFET datasheet

 BSC034N03LS cross reference
 BSC034N03LS equivalent finder
 BSC034N03LS lookup
 BSC034N03LS substitution
 BSC034N03LS replacement

 

 
Back to Top

 


 
.