BSC042N03LS Datasheet. Specs and Replacement

Type Designator: BSC042N03LS  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 20 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 4.4 nS

Cossⓘ - Output Capacitance: 930 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0042 Ohm

Package: PG-TDSON-8

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BSC042N03LS datasheet

 ..1. Size:664K  infineon
bsc042n03ls .pdf pdf_icon

BSC042N03LS

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 ..2. Size:483K  infineon
bsc042n03ls bsc042n03lsg.pdf pdf_icon

BSC042N03LS

BSC042N03LS G OptiMOS 3 Power-MOSFET Product Summary VDS 30 V Features RDS(on),max 4.2 mW Fast switching MOSFET for SMPS ID 93 A Optimized technology for DC/DC converters PG-TDSON-8 Qualified according to JEDEC1) for target applications N-channel; Logic level Excellent gate charge x R product (FOM) DS(on) Very low on-resistance R DS(on) Superi... See More ⇒

 5.1. Size:637K  infineon
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BSC042N03LS

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 5.2. Size:484K  infineon
bsc042n03ms.pdf pdf_icon

BSC042N03LS

BSC042N03MS G OptiMOS 3 Power-MOSFET Product Summary Features VDS 30 V Optimized for 5V driver application (Notebook, VGA, POL) RDS(on),max VGS=10 V 4.2 mW Low FOMSW for High Frequency SMPS VGS=4.5 V 5.4 100% Avalanche tested ID 93 A N-channel PG-TDSON-8 Very low on-resistance R @ V =4.5 V DS(on) GS Excellent gate charge x R product (FOM) DS(on)... See More ⇒

Detailed specifications: BSC034N03LS, BSC034N06NS, BSC035N10NS5, BSC036NE7NS3G, BSC037N08NS5, BSC039N06NS, BSC040N08NS5, BSC040N10NS5, IRF1405, BSC042N03MS, BSC042N03S, BSC046N02KS, BSC046N10NS3G, BSC050N03LS, BSC050N03MS, BSC052N08NS5, BSC057N03LS

Keywords - BSC042N03LS MOSFET specs

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