BSC042N03LS Specs and Replacement
Type Designator: BSC042N03LS
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 2.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 20 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 4.4 nS
Cossⓘ - Output Capacitance: 930 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0042 Ohm
Package: PG-TDSON-8
BSC042N03LS substitution
BSC042N03LS datasheet
bsc042n03ls .pdf
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bsc042n03ls bsc042n03lsg.pdf
BSC042N03LS G OptiMOS 3 Power-MOSFET Product Summary VDS 30 V Features RDS(on),max 4.2 mW Fast switching MOSFET for SMPS ID 93 A Optimized technology for DC/DC converters PG-TDSON-8 Qualified according to JEDEC1) for target applications N-channel; Logic level Excellent gate charge x R product (FOM) DS(on) Very low on-resistance R DS(on) Superi... See More ⇒
bsc042n03ms.pdf
BSC042N03MS G OptiMOS 3 Power-MOSFET Product Summary Features VDS 30 V Optimized for 5V driver application (Notebook, VGA, POL) RDS(on),max VGS=10 V 4.2 mW Low FOMSW for High Frequency SMPS VGS=4.5 V 5.4 100% Avalanche tested ID 93 A N-channel PG-TDSON-8 Very low on-resistance R @ V =4.5 V DS(on) GS Excellent gate charge x R product (FOM) DS(on)... See More ⇒
Detailed specifications: BSC034N03LS , BSC034N06NS , BSC035N10NS5 , BSC036NE7NS3G , BSC037N08NS5 , BSC039N06NS , BSC040N08NS5 , BSC040N10NS5 , 20N50 , BSC042N03MS , BSC042N03S , BSC046N02KS , BSC046N10NS3G , BSC050N03LS , BSC050N03MS , BSC052N08NS5 , BSC057N03LS .
Keywords - BSC042N03LS MOSFET specs
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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
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