All MOSFET. SI3443DVPBF Datasheet

 

SI3443DVPBF MOSFET. Datasheet pdf. Equivalent


   Type Designator: SI3443DVPBF
   Marking Code: A*
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.2 V
   |Id|ⓘ - Maximum Drain Current: 4.4 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 11 nC
   trⓘ - Rise Time: 33 nS
   Cossⓘ - Output Capacitance: 220 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.065 Ohm
   Package: TSOP6

 SI3443DVPBF Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SI3443DVPBF Datasheet (PDF)

 ..1. Size:109K  1
 si3443dvpbf.pdf

SI3443DVPBF SI3443DVPBF

PD-95240Si3443DVPbFHEXFET Power MOSFETl Ultra Low On-Resistance A1 6D Dl P-Channel MOSFETVDSS = -20Vl Surface Mount25DDl Available in Tape & Reell -2.5V Rated34G SRDS(on) = 0.065l Lead-FreeTop ViewDescriptionThese P-channel MOSFETs from International Rectifierutilize advanced processing techniques to achieve theextremely low on-resistance per

 6.1. Size:93K  international rectifier
 si3443dv.pdf

SI3443DVPBF SI3443DVPBF

PD- 93795ASi3443DVHEXFET Power MOSFET Ultra Low On-ResistanceA1 6D D P-Channel MOSFETVDSS = -20V Surface Mount25DD Available in Tape & Reel -2.5V Rated3 4G SRDS(on) = 0.065Top ViewDescriptionThese P-channel MOSFETs from International Rectifierutilize advanced processing techniques to achieve theextremely low on-resistance per silicon area. This

 6.2. Size:109K  fairchild semi
 si3443dv.pdf

SI3443DVPBF SI3443DVPBF

April 2001Si3443DVP-Channel 2.5V Specified PowerTrench MOSFETGeneral DescriptionFeatures DS(ON) GS DS(ON) GS

 6.3. Size:68K  vishay
 si3443dv.pdf

SI3443DVPBF SI3443DVPBF

Si3443DVVishay SiliconixP-Channel 2.5-V (G-S) MOSFETPRODUCT SUMMARYFEATURESVDS (V) rDS(on) (W) ID (A) D TrenchFETr Power MOSFETD 100% Rg Tested0.065 @ VGS = -4.5 V -4.50.090 @ VGS = -2.7 V -3.8-200.100 @ VGS = -2.5 V -3.7TSOP-6(4) STop View1 6(3) G3 mm523 42.85 mm(1, 2, 5, 6) DOrdering Information: Si3443DV-T1E3 (Lead Free)P-Channel MOSFETABSOL

 6.4. Size:128K  vishay
 si3443dvtr.pdf

SI3443DVPBF SI3443DVPBF

PD- 93795BSi3443DVHEXFET Power MOSFETl Ultra Low On-ResistanceA1 6D Dl P-Channel MOSFETVDSS = -20Vl Surface Mount25DDl Available in Tape & Reell -2.5V Rated34G SRDS(on) = 0.065Top ViewDescriptionThese P-channel MOSFETs from International Rectifierutilize advanced processing techniques to achieve theextremely low on-resistance per silicon area

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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