SI3443DVPBF - описание и поиск аналогов

PD-95240 Si3443DVPbF HEXFET Power MOSFET l Ultra Low On-Resistance A 1 6 D D l P-Channel MOSFET VDSS = -20V l Surface Mount 2 5 D D l Available in Tape & Reel l -2.5V Rated 3 4 G S RDS(on) = 0.065 l Lead-Free Top View Description These P-channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per

PD- 93795A Si3443DV HEXFET Power MOSFET Ultra Low On-Resistance A 1 6 D D P-Channel MOSFET VDSS = -20V Surface Mount 2 5 D D Available in Tape & Reel -2.5V Rated 3 4 G S RDS(on) = 0.065 Top View Description These P-channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This

April 2001 Si3443DV P-Channel 2.5V Specified PowerTrench MOSFET General Description Features DS(ON) GS DS(ON) GS

Si3443DV Vishay Siliconix P-Channel 2.5-V (G-S) MOSFET PRODUCT SUMMARY FEATURES VDS (V) rDS(on) (W) ID (A) D TrenchFETr Power MOSFET D 100% Rg Tested 0.065 @ VGS = -4.5 V -4.5 0.090 @ VGS = -2.7 V -3.8 -20 0.100 @ VGS = -2.5 V -3.7 TSOP-6 (4) S Top View 1 6 (3) G 3 mm 5 2 3 4 2.85 mm (1, 2, 5, 6) D Ordering Information Si3443DV-T1 E3 (Lead Free) P-Channel MOSFET ABSOL

PD- 93795B Si3443DV HEXFET Power MOSFET l Ultra Low On-Resistance A 1 6 D D l P-Channel MOSFET VDSS = -20V l Surface Mount 2 5 D D l Available in Tape & Reel l -2.5V Rated 3 4 G S RDS(on) = 0.065 Top View Description These P-channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area