BSC042N03S Datasheet and Replacement
Type Designator: BSC042N03S
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 2.8 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 20 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 5.8 nS
Cossⓘ - Output Capacitance: 980 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0042 Ohm
Package: PG-TDSON-8
BSC042N03S substitution
BSC042N03S Datasheet (PDF)
bsc042n03s.pdf

BSC042N03S GOptiMOS2 Power-TransistorProduct SummaryFeaturesV 30 VDS Fast switching MOSFET for SMPSR 4.2mDS(on),max Optimized technology for notebook DC/DC convertersI 95 AD Qualified according to JEDEC1 for target applicationsPG-TDSON-8 Logic level / N-channel Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(
bsc042n03ls .pdf

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bsc042n03ls bsc042n03lsg.pdf

BSC042N03LS GOptiMOS3 Power-MOSFET Product Summary VDS 30 V FeaturesRDS(on),max 4.2 mW Fast switching MOSFET for SMPSID 93 A Optimized technology for DC/DC convertersPG-TDSON-8 Qualified according to JEDEC1) for target applications N-channel; Logic level Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on) Superi
Datasheet: BSC035N10NS5 , BSC036NE7NS3G , BSC037N08NS5 , BSC039N06NS , BSC040N08NS5 , BSC040N10NS5 , BSC042N03LS , BSC042N03MS , IRFB31N20D , BSC046N02KS , BSC046N10NS3G , BSC050N03LS , BSC050N03MS , BSC052N08NS5 , BSC057N03LS , BSC057N03MS , BSC059N03S .
History: FTK4407 | RZQ045P01TR | TSG10N06AT | CEB1195 | LSB65R125HT | H02N60SI | AUIRF2804WL
Keywords - BSC042N03S MOSFET datasheet
BSC042N03S cross reference
BSC042N03S equivalent finder
BSC042N03S lookup
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BSC042N03S replacement
History: FTK4407 | RZQ045P01TR | TSG10N06AT | CEB1195 | LSB65R125HT | H02N60SI | AUIRF2804WL



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