BSC042N03S
MOSFET. Datasheet pdf. Equivalent
Type Designator: BSC042N03S
Marking Code: 42N03S
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 2.8
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2
V
|Id|ⓘ - Maximum Drain Current: 20
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 21
nC
trⓘ - Rise Time: 5.8
nS
Cossⓘ -
Output Capacitance: 980
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0042
Ohm
Package: PG-TDSON-8
BSC042N03S
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
BSC042N03S
Datasheet (PDF)
..2. Size:383K infineon
bsc042n03s.pdf
BSC042N03S GOptiMOS2 Power-TransistorProduct SummaryFeaturesV 30 VDS Fast switching MOSFET for SMPSR 4.2mDS(on),max Optimized technology for notebook DC/DC convertersI 95 AD Qualified according to JEDEC1 for target applicationsPG-TDSON-8 Logic level / N-channel Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(
5.1. Size:664K infineon
bsc042n03ls .pdf
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5.2. Size:483K infineon
bsc042n03ls bsc042n03lsg.pdf
BSC042N03LS GOptiMOS3 Power-MOSFET Product Summary VDS 30 V FeaturesRDS(on),max 4.2 mW Fast switching MOSFET for SMPSID 93 A Optimized technology for DC/DC convertersPG-TDSON-8 Qualified according to JEDEC1) for target applications N-channel; Logic level Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on) Superi
5.3. Size:484K infineon
bsc042n03ms.pdf
BSC042N03MS GOptiMOS3 Power-MOSFETProduct Summary FeaturesVDS 30 V Optimized for 5V driver application (Notebook, VGA, POL)RDS(on),max VGS=10 V 4.2 mW Low FOMSW for High Frequency SMPSVGS=4.5 V 5.4 100% Avalanche testedID 93 A N-channelPG-TDSON-8 Very low on-resistance R @ V =4.5 VDS(on) GS Excellent gate charge x R product (FOM)DS(on)
5.4. Size:267K infineon
bsc042n03msg.pdf
BSC042N03MS GOptiMOS3 Power-MOSFETProduct SummaryFeaturesV 30 VDS Optimized for 5V driver application (Notebook, VGA, POL)R V =10 V 4.2mDS(on),max GS Low FOMSW for High Frequency SMPSV =4.5 V 5.4GS 100% Avalanche testedI 93 AD N-channelPG-TDSON-8 Very low on-resistance R @ V =4.5 VDS(on) GS Excellent gate charge x R product (FOM)D
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