BSC042N03S Specs and Replacement
Type Designator: BSC042N03S
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 2.8 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 20 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 5.8 nS
Cossⓘ - Output Capacitance: 980 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0042 Ohm
Package: PG-TDSON-8
BSC042N03S substitution
- MOSFET ⓘ Cross-Reference Search
BSC042N03S datasheet
bsc042n03s.pdf
BSC042N03S G OptiMOS 2 Power-Transistor Product Summary Features V 30 V DS Fast switching MOSFET for SMPS R 4.2 m DS(on),max Optimized technology for notebook DC/DC converters I 95 A D Qualified according to JEDEC1 for target applications PG-TDSON-8 Logic level / N-channel Excellent gate charge x R product (FOM) DS(on) Very low on-resistance R DS(... See More ⇒
bsc042n03ls .pdf
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bsc042n03ls bsc042n03lsg.pdf
BSC042N03LS G OptiMOS 3 Power-MOSFET Product Summary VDS 30 V Features RDS(on),max 4.2 mW Fast switching MOSFET for SMPS ID 93 A Optimized technology for DC/DC converters PG-TDSON-8 Qualified according to JEDEC1) for target applications N-channel; Logic level Excellent gate charge x R product (FOM) DS(on) Very low on-resistance R DS(on) Superi... See More ⇒
Detailed specifications: BSC035N10NS5, BSC036NE7NS3G, BSC037N08NS5, BSC039N06NS, BSC040N08NS5, BSC040N10NS5, BSC042N03LS, BSC042N03MS, IRF2807, BSC046N02KS, BSC046N10NS3G, BSC050N03LS, BSC050N03MS, BSC052N08NS5, BSC057N03LS, BSC057N03MS, BSC059N03S
Keywords - BSC042N03S MOSFET specs
BSC042N03S cross reference
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
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